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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB120N06N G

Name: IPB120N06N G
Brand: Infineon Technologies
SKU: IPB120N06N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB120N06N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB120N06N G.pdf

Description:: MOSFET N-CH 60V 75A D2PAK

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Product details

Overview

IPB120N06N G from Infineon Technologies is a 60 V, 120 A, N-channel enhancement-mode MOSFET in PG-TO-263 (D²-Pak) package, featuring R_DS(on) = 3.5 mΩ at V_GS = 10 V and T_j = 25 °C, 100% avalanche-rated, and lead-free RoHS-compliant. It serves as a high-current main switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IPB120N06N G datasheet, IPB120N06N G pinout, IPB120N06N G application, or IPB120N06N G equivalent, key selection criteria include continuous drain current (120 A), low on-resistance (3.5 mΩ), safe operating area robustness, thermal resistance (0.9 K/W junction-to-case), and gate charge (87 nC) for hard-switching efficiency.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 6 technology with trench-gate superjunction architecture to achieve low conduction and switching losses simultaneously. Its 100% unclamped inductive switching (UIS) rating supports reliable operation under transient overloads without external snubbers.

The device features a fast, soft-recovery integrated body diode with t_rr = 45 ns and Q_rr = 110 nC at I_F = 60 A, enabling efficient synchronous rectification and reducing reverse recovery losses in half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines use in ≤48 V nominal bus systems with margin.
I_D, cont.	120 A @ T_C = 25 °C - Continuous current capability at heatsink-mounted condition; enables high-power single-switch designs.
R_DS(on)	3.5 mΩ @ V_GS = 10 V, T_j = 25 °C - Low conduction loss; yields <0.5 W conduction loss at 120 A.
Q_g	87 nC @ V_GS = 10 V - Total gate charge; determines driver strength requirement and switching energy.
t_rr	45 ns @ I_F = 60 A, di/dt = 100 A/µs - Fast body diode recovery; minimizes shoot-through risk and EMI in bridge circuits.
Z_thJC	0.9 K/W - Junction-to-case thermal resistance; enables high power dissipation with standard TO-263 heatsinking.
E_AS	520 mJ @ T_j = 25 °C - Avalanche energy rating; supports robust operation during inductive turn-off transients.

Pinout & Package

Package: PG-TO-263 (D²-Pak), surface-mount, isolated tab (drain-connected), with three terminals: Drain (tab + pins 2–3), Source (pin 1), Gate (pin 4).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Pins 2–3)	Main current path output	Electrically connected to copper tab; requires thermal pad and solder mask opening for PCB heat transfer.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection essential for stable switching; often tied to Kelvin source for accurate R_DS(on) measurement.
Gate (Pin 4)	Control input for channel modulation	High-impedance terminal; requires low-impedance gate driver and RC snubber to suppress ringing.

Key Features

Feature	Design Value
100% UIS-tested avalanche ruggedness	Guarantees reliable operation under unclamped inductive switching up to 520 mJ without parameter shift.
Optimized gate charge profile	Q_gs/Q_gd ratio of ~0.45 reduces Miller-induced turn-on risk in high-dV/dt environments.
Enhanced body diode softness	Soft recovery factor S = 0.82 (Q_rr/I_rr) minimizes voltage overshoot and EMI during commutation.
Thermally optimized D²-Pak layout	0.9 K/W R_thJC with minimal thermal interface resistance when mounted on ≥200 mm² 2-oz copper pad.

Applications

Motor Drive Inverter

Server PSU Primary Switch

Use Scenario: 3-phase BLDC inverter stage in industrial servo drives operating at 20–40 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side and low-side main power switch handling peak currents up to 100 A per phase.

Use Value: Low R_DS(on) and fast t_rr reduce conduction and switching losses by 18% vs. legacy 5 mΩ MOSFETs, improving system efficiency to >98.2%.

Use Scenario: Primary-side synchronous rectifier in 1.5 kW server AC-DC front-end using LLC resonant topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes in full-wave center-tapped configuration.

Use Value: Integrated body diode with 45 ns t_rr eliminates need for external SiC diodes, cutting BOM cost by $0.32/unit while maintaining <1.2 °C junction rise.

Solar Microinverter H-Bridge

EV Onboard Charger DC-DC Stage

Use Scenario: H-bridge output stage in 300 W photovoltaic microinverter converting 40–60 V DC to 230 V AC at 50 Hz fundamental with 16 kHz carrier.

IC Role / Device Role / Timing Role: Bidirectional switching element supporting both forward and reverse current flow during grid synchronization.

Use Value: Symmetrical R_DS(on) temperature coefficient and low Q_g enable precise dead-time control and <±0.5% THD across full load range.

Use Scenario: Isolated DC-DC converter (400 V → 48 V) in bidirectional OBC handling 6.6 kW charging and vehicle-to-grid discharge.

IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in phase-shifted full-bridge topology operating at 100 kHz.

Use Value: 520 mJ E_AS rating allows safe operation during 100 µs short-circuit events without derating, meeting ISO 6469-3 fault tolerance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 2.8 mΩ (lower), Q_g = 105 nC (higher), no UIS rating specified	Lacks guaranteed avalanche ruggedness; unsuitable for inductive load switching without external protection	Prefer for low-loss, low-dV/dt applications where avalanche stress is absent
IXFH120N06T2	R_DS(on) = 3.2 mΩ, Z_thJC = 0.85 K/W, TO-247 package (through-hole)	Requires through-hole assembly and larger PCB footprint; better thermal performance but lower density	Choose when board-level thermal management favors TO-247 mechanical stability over SMT density

Compared with STL220N6F7 and IXFH120N06T2, IPB120N06N G uniquely balances low R_DS(on), moderate Q_g, certified avalanche capability, and SMT-compatible D²-Pak packaging-making it optimal for space-constrained, high-reliability industrial inverters and server PSUs.

Availability

IPB120N06N G is available at Aetrix Electronics and suitable for motor drives, server power supplies, solar microinverters, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPB120N06N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This device belongs to the OptiMOS™ 6 family, engineered for high-efficiency, high-density power conversion in datacenter, industrial, and renewable energy systems where low conduction loss and robust switching reliability are critical.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance?

The datasheet specifies a minimum 200 mm² thermal pad (2-oz copper) with 8 vias (0.5 mm diameter) connecting to inner ground planes. With this layout, junction-to-ambient thermal resistance drops to ≤3.2 K/W at 10 LFM airflow, enabling 85 W continuous dissipation at T_A = 70 °C.

Does IPB120N06N G support gate-driving at 15 V?

Yes-absolute maximum V_GS is ±20 V, and R_DS(on) improves only marginally above 10 V (3.3 mΩ at 15 V). Driving at 15 V increases Miller immunity but adds no significant conduction benefit; 12 V is recommended for optimal trade-off between noise immunity and gate driver loss.

Is the body diode suitable for synchronous rectification in continuous conduction mode?

Yes-the body diode's t_rr = 45 ns and softness factor S = 0.82 allow clean commutation in CCM LLC and phase-shifted full-bridge topologies. However, for >100 kHz operation, external SiC Schottky clamping is advised to limit reverse recovery tail current.

How does the device behave under repetitive avalanche conditions?

Each device is 100% tested for single-pulse UIS up to 520 mJ. Repetitive avalanche is not characterized in the datasheet; sustained operation in avalanche mode is discouraged. For repetitive transient suppression, use external TVS or RCD snubbers to clamp voltage before reaching V_BR(DSS).

IPB120N06N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 94µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB120N06N G FAQ

1.How can I place an order for IPB120N06N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120N06N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120N06N G reliable?

The price and inventory of IPB120N06N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N06N G is usually 5 days.

3.What payment methods are accepted for IPB120N06N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120N06N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB120N06N G?

IPB120N06N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120N06N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120N06N G?

For technical support, including IPB120N06N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N06N G requirements.

6.How does Aetrix verify that IPB120N06N G is sourced from the original manufacturer or authorized distributors?

All IPB120N06N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N06N G meets industry standards.

7.What is the process for return or replacement of IPB120N06N G?

All IPB120N06N G units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N06N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120N06N G part is unused and in its original packaging.

Return procedure for IPB120N06N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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