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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB120N06S402ATMA1

Name: IPB120N06S402ATMA1
Brand: Infineon Technologies
SKU: IPB120N06S402ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB120N06S402ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB120N06S402ATMA1.pdf

Description:: MOSFET N-CH 60V 120A TO263-3

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Product details

Overview

IPB120N06S402ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 2.4 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 100 A, with 175 °C maximum junction temperature and 100% single-pulse avalanche tested to 560 mJ. It delivers high-current switching in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB120N06S402ATMA1 datasheet, IPB120N06S402ATMA1 pinout, IPB120N06S402ATMA1 application, or IPB120N06S402ATMA1 equivalent, key selection criteria include R_DS(on) at elevated T_j, avalanche ruggedness, thermal resistance (R_thJC = 0.8 K/W), gate charge profile (Q_g = 150–195 nC), and AEC-Q101 qualification status for automotive power stages.

Technical Context

This MOSFET employs trench-based silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures robust turn-on margin under noisy automotive supply conditions, while its low Crss (110–220 pF) minimizes Miller-induced shoot-through risk in half-bridge configurations.

The device integrates a co-packaged body diode with t_rr = 190 ns and Q_rr = 170 nC, enabling efficient synchronous rectification and freewheeling in buck and H-bridge circuits. Thermal design is supported by a validated R_thJC of 0.8 K/W and SMD-compatible footprint on 6 cm² copper area (R_thJA = 40 K/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 12 V/24 V automotive systems with transient overvoltage margin
R_DS(on) max	2.4 mΩ at V_GS = 10 V, I_D = 100 A - Enables ≤1.2 W conduction loss at 120 A continuous current
I_D cont	120 A at T_C = 25 °C - Supported by bondwire-limited current rating and 0.8 K/W thermal path
E_AS	560 mJ (I_D = 60 A) - Confirmed single-pulse avalanche energy for inductive load switching reliability
Q_g	150–195 nC - Determines gate driver power requirement and switching speed in 10–100 kHz power stages
t_r/t_f	5 ns / 10 ns - Fast edge rates reduce switching losses but require careful PCB layout to suppress EMI
T_j max	+175 °C - Enables operation in under-hood environments without derating below 120 A at T_C = 100 °C

Pinout & Package

IPB120N06S402ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK), with drain connected to the exposed tab for low-inductance thermal and electrical path. Pin 1 is Gate, Pin 2 is Source, Pin 3 is Drain (tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring <195 nC total charge; sensitive to ESD (±20 V absolute max)
Pin 2 (S)	Source	Reference node for gate drive; carries full load current and must be low-impedance
Pin 3 (D) / Tab	Drain	Main power output terminal; electrically and thermally tied to PCB copper pour via soldered tab

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit verified for 560 mJ single-pulse energy handling-no screening omissions
MSL1 reflow rating	Suitable for lead-free assembly up to 260 °C peak without popcorn or delamination
R_thJC = 0.8 K/W	Enables >200 W dissipation with modest heatsinking; critical for compact inverter designs
Green Product (RoHS)	Compliant with EU Directive 2011/65/EU; no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Inverters

Use Scenario: 12 V to 48 V bidirectional conversion in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 50–100 kHz with 120 A peak current.

Use Value: 2.4 mΩ R_DS(on) reduces conduction loss by ≥35% vs. legacy 3.5 mΩ devices, improving system efficiency above 95%.

Use Scenario: Three-phase inverter driving 12 V BLDC motor in column-assist EPS modules.

IC Role / Device Role / Timing Role: Low-side power switch with integrated body diode conducting freewheeling current during PWM dead time.

Use Value: 190 ns t_rr and 170 nC Q_rr minimize diode reverse recovery loss and associated voltage spikes.

Onboard Charger (OBC) Input Stage

48 V Server Rack Power Distribution

Use Scenario: AC-DC PFC boost switch in 3.3 kW OBC units for BEVs.

IC Role / Device Role / Timing Role: Fast-switching, high-current boost transistor with 60 V rating matching 48 V nominal bus.

Use Value: 150–195 nC Q_g enables clean 100 kHz switching with standard gate drivers, reducing gate drive complexity.

Use Scenario: Hot-swap and load-switch protection in 48 V AI server power rails.

IC Role / Device Role / Timing Role: Low-R_DS(on) load switch controlling power delivery to GPU or ASIC subsystems.

Use Value: 175 °C T_j max and AEC-Q101 qualification ensure long-term reliability in thermally dense datacenter environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP120N06S4-02	Same die, TO-220-3-1 through-hole package; R_thJC = 0.8 K/W identical, but R_thJA = 62 K/W (no PCB copper benefit)	Better suited for prototyping or low-volume industrial controls where manual assembly is preferred	Select when mechanical mounting stability outweighs thermal performance or SMT automation is unavailable
IPB120N06S4-02	Identical die and PG-TO263-3-2 package; marking "4N0602" matches IPB120N06S402ATMA1; same AEC-Q101 and MSL1 ratings	No functional difference; alternate ordering code for identical specification and traceability	Use for cross-reference sourcing-same electrical, thermal, and qualification behavior

Compared with IPP120N06S4-02 and IPB120N06S4-02, IPB120N06S402ATMA1 offers identical silicon performance and automotive qualification, but its PG-TO263-3-2 packaging provides superior thermal transfer to PCB copper versus TO-220, making it optimal for high-power-density automotive modules requiring automated SMT assembly.

Availability

IPB120N06S402ATMA1 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering inverters, and 48 V server rack distribution requiring stable component supply across multi-year production cycles.

Supply support for IPB120N06S402ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 product line-designed specifically for high-efficiency, high-reliability automotive power stages demanding low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB120N06S402ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with minimum 6 V to ensure reliable turn-on across temperature and process variation. Gate drive circuits must include clamping or Zener protection to prevent transients from exceeding ±20 V.

Does IPB120N06S402ATMA1 have an integrated Schottky diode?

No-it features a monolithic silicon body diode inherent to the MOSFET structure, not a discrete Schottky. This diode has V_SD = 0.9–1.3 V at 100 A and t_rr = 190 ns, optimized for freewheeling in hard-switched topologies. It is not a low-V_F Schottky but is fully characterized and avalanche-rated.

Can IPB120N06S402ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with T_j) enables inherently stable current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling. Derating to ≤90 A per device is recommended for 175 °C T_j operation in shared heatsink setups.

Is the PG-TO263-3-2 package lead-free compatible?

Yes-the device is qualified to MSL1 per JEDEC J-STD-020 and supports peak reflow temperatures up to 260 °C for lead-free soldering. The package uses matte tin plating and complies with RoHS Directive 2011/65/EU, with no exemptions required for lead content.

IPB120N06S402ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 140µA

Gate Charge (Qg) (Max) @ Vgs:: 195 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 15750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB120N06S402ATMA1 FAQ

1.How can I place an order for IPB120N06S402ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120N06S402ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120N06S402ATMA1 reliable?

The price and inventory of IPB120N06S402ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N06S402ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB120N06S402ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120N06S402ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB120N06S402ATMA1?

IPB120N06S402ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120N06S402ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120N06S402ATMA1?

For technical support, including IPB120N06S402ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N06S402ATMA1 requirements.

6.How does Aetrix verify that IPB120N06S402ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB120N06S402ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N06S402ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB120N06S402ATMA1?

All IPB120N06S402ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N06S402ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120N06S402ATMA1 part is unused and in its original packaging.

Return procedure for IPB120N06S402ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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