Infineon Technologies IPB120N06S402ATMA2

Overview

IPB120N06S402ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 120 A continuous drain current at T_C = 25 °C, 2.4 mΩ max R_DS(on) at V_GS = 10 V, and 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB120N06S402ATMA2 datasheet, IPB120N06S402ATMA2 pinout, IPB120N06S402ATMA2 application, or IPB120N06S402ATMA2 equivalent, key selection criteria include R_DS(on) at 100 A, single-pulse avalanche energy (560 mJ), thermal resistance (R_thJC = 0.8 K/W), gate charge profile (Q_g = 150–195 nC), and AEC-Q101 qualification status.

Technical Context

This device uses trench-gate silicon technology optimized for low conduction and switching losses in high-duty-cycle automotive power stages. Its 2.4 mΩ R_DS(on) enables efficient 12 V/48 V battery-fed systems, while 100% avalanche testing ensures robustness against inductive load transients.

The gate threshold voltage range (2.0–4.0 V) supports reliable turn-on with standard 5 V or 3.3 V logic-level drivers, and its 12.1 nF typical input capacitance (C_iss) enables predictable gate drive sizing for PWM frequencies up to 200 kHz.

Key Specifications

Pinout & Package

IPB120N06S402ATMA2 uses the PG-TO263-3-2 surface-mount package (D²PAK variant), with drain-connected tab for direct PCB thermal coupling. The three terminals are arranged in a single-row configuration compatible with automated reflow assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with IPP120N06S4-02, IPB120N06S402ATMA2 offers superior thermal performance in SMD layouts; versus IPB120N06S403ATMA1, it trades 0.4 mΩ higher R_DS(on) for 15 % lower Q_g, enabling faster switching with reduced driver stress.

Availability

IPB120N06S402ATMA2 is available at Aetrix Electronics and suitable for automotive starter-solenoid drivers, 48 V DC-DC converters, EPS motor inverters, and onboard charger input stages requiring stable component supply across multi-year vehicle programs.

Supply support for IPB120N06S402ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-current, high-temperature automotive power conversion and motor control applications demanding AEC-Q101 reliability.

FAQ

What is the maximum allowable gate-source voltage for IPB120N06S402ATMA2?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable switching, keep V_GS between 4.5 V (minimum turn-on) and 12 V (recommended max for long-term stability), as specified in the static characteristics table on page 2 of the Rev. 1.2 datasheet.

Does IPB120N06S402ATMA2 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic parasitic body diode with 120 A continuous forward current rating and 480 A pulsed capability. At T_j = 25 °C and I_F = 100 A, V_SD is 0.9–1.3 V, and reverse recovery time t_rr is 190 ns under 30 V reverse bias and 100 A/µs di/dt conditions, enabling use in synchronous rectification without external diodes.

How does the thermal resistance R_thJC = 0.8 K/W translate to real-world PCB layout requirements?

With R_thJC = 0.8 K/W, a 120 W power dissipation yields a 96 K junction-to-case temperature rise. To maintain T_j ≤175 °C at 105 °C case temperature, the PCB must provide ≤70 K/W total junction-to-ambient path-requiring ≥6 cm² of 70 µm copper on FR4, vertical orientation, and no thermal relief on the drain pad per Figure 3 in the datasheet.

Is IPB120N06S402ATMA2 suitable for use in life-support equipment?

No. Infineon explicitly restricts use in life-support devices or systems unless approved in writing. This MOSFET is qualified for automotive powertrain and chassis applications-not medical implants or critical patient-monitoring hardware-due to absence of ISO 13485 process certification and lack of fault-tolerant redundancy design.