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Infineon Technologies IPB120N06S403ATMA1

Part No.:
IPB120N06S403ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB120N06S403ATMA1.pdf
Description:
MOSFET N-CH 60V 120A TO263-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,241

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Product details

Overview

IPB120N06S403ATMA1 from Infineon Technologies is a 60 V, 120 A N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, AEC-Q101 qualified for automotive applications, with RDS(on) max of 2.8 mΩ at VGS = 10 V and 100% single-pulse avalanche tested to 392 mJ. It serves as a high-current main switch in 12 V/24 V DC-DC converters and motor control inverters.

For engineers reviewing the IPB120N06S403ATMA1 datasheet, IPB120N06S403ATMA1 pinout, IPB120N06S403ATMA1 application, or IPB120N06S403ATMA1 equivalent, key selection criteria include its 0.9 K/W junction-to-case thermal resistance, 175 °C maximum operating temperature, SMD-compatible TO263 footprint, and integrated body diode with 115 ns reverse recovery time.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-frequency hard-switched topologies. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity.

The MOSFET features a fully characterized dynamic capacitance profile (Ciss = 10.1–13.2 nF, Coss = 2.48–3.22 nF), defined gate charge (Qg = 125–160 nC), and controlled turn-on/turn-off timing (td(on) = 40 ns, td(off) = 80 ns) - enabling precise dead-time management in half-bridge configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - supports 12 V/24 V automotive battery rails with 2× safety margin against transients
RDS(on) max2.8 mΩ at VGS = 10 V - enables ≤1.7 W conduction loss at 120 A continuous drain current
ID continuous120 A at TC = 25 °C - rated for high-power motor phase switches and DC-DC primary-side switches
EAS392 mJ - withstands single-pulse inductive energy without failure in unclamped inductive switching
RthJC0.9 K/W - allows direct heatsink mounting for efficient thermal path from die to case
Qg125–160 nC - determines gate driver current requirement (~1.6 A peak for 100 ns rise time)
tr/tf10 ns / 15 ns - supports >500 kHz switching in resonant and synchronous rectifier designs

Pinout & Package

IPB120N06S403ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK), with drain-connected tab for thermal and electrical connection to PCB copper area. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives 0–10 V logic-level signal; requires <160 nC charge for full enhancement
Pin 2 (Drain)High-side power nodeInternally connected to exposed copper tab; must be soldered to ≥6 cm² PCB copper for RthJA = 40 K/W
Pin 3 (Source)Reference return pathServes as local ground reference for gate drive; carries full load current back to source rail

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive under-hood use up to 175 °C junction temperature
100% avalanche testedGuarantees robustness in unclamped inductive switching events common in motor drives
Green Product (RoHS)Lead-free and halogen-free construction compliant with EU Directive 2011/65/EU
Optimized body diodeQrr = 110 nC and trr = 115 ns enable efficient synchronous rectification without external Schottky
MSL1 reflow ratingWithstands peak reflow temperatures up to 260 °C - compatible with standard lead-free assembly processes

Applications

Automotive DC-DC ConvertersBrushless DC Motor Inverters

Use Scenario: 12 V to 48 V bidirectional DC-DC converter in 48 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary-side high-side synchronous switch operating at 200–300 kHz with zero-voltage switching assist.

Use Value: 2.8 mΩ RDS(on) reduces conduction loss by >35% vs. legacy 3.8 mΩ devices, improving system efficiency from 92% to 94.2% at 10 kW.

Use Scenario: 3-phase inverter driving 5–10 kW traction motors in electric power steering (EPS) systems.

IC Role / Device Role / Timing Role: Low-side switching element in each leg, commutated at 10–20 kHz with active freewheeling.

Use Value: 115 ns trr and 110 nC Qrr minimize diode switching loss and EMI during PWM transitions.

Industrial UPS SystemsServer VRMs

Use Scenario: Output stage switch in online double-conversion UPS delivering 3 kVA with <1% THD.

IC Role / Device Role / Timing Role: High-current output rectifier in synchronous buck topology, handling 120 A continuous load.

Use Value: 0.9 K/W RthJC enables direct heatsink attachment, reducing thermal derating and allowing compact 1U chassis design.

Use Scenario: High-density 48 V to 0.8 V VRM for AI accelerators requiring >600 A per phase.

IC Role / Device Role / Timing Role: Phase-leg high-side FET in multiphase interleaved buck converter running at 1 MHz.

Use Value: 125–160 nC Qg permits fast, low-loss switching with standard 2 A gate drivers, supporting tight duty-cycle control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP120N06S4-03Same die, TO-220-3-1 through-hole package; RthJC = 0.9 K/W but higher RthJA (62 K/W)Preferred for prototyping, low-volume industrial controls where manual assembly is usedSelect when board space allows larger footprint and thermal management relies on clip-on heatsinks
IPI120N06S4-03Same die, TO-262-3-1 package; identical RthJC, slightly lower RthJA than TO-220 but no exposed drain tabSuitable for cost-sensitive automotive modules where wave-soldering is requiredChoose when automated through-hole assembly is mandated and PCB copper area is limited

Compared with IPP120N06S4-03 and IPI120N06S4-03, IPB120N06S403ATMA1 delivers superior thermal performance in SMD layouts due to its exposed drain tab and optimized PCB copper coupling, making it the preferred choice for high-power density automotive and server applications where airflow and board real estate are constrained.

Availability

IPB120N06S403ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, brushless DC motor inverters, and industrial UPS systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPB120N06S403ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial applications demanding AEC-Q101 compliance and robust avalanche capability.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPB120N06S403ATMA1 is rated for continuous operation up to 175 °C junction temperature, validated per AEC-Q101 stress testing. Derating curves show 120 A current capability at TC = 25 °C, decreasing linearly to ~75 A at TC = 100 °C, assuming RthJC = 0.9 K/W and proper heatsinking.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-noise environments?

No - the device has a gate threshold voltage range of 2.0–4.0 V and exhibits stable turn-off behavior with 0 V gate drive. However, applying –5 V enhances noise immunity in high-dV/dt motor drive applications; the absolute maximum VGS is ±20 V, so –5 V is within safe limits and improves Miller immunity.

Can the integrated body diode replace an external Schottky in synchronous rectification?

Yes - the body diode is fully characterized with trr = 115 ns and Qrr = 110 nC at Tj = 25 °C, enabling use in synchronous buck topologies up to 300 kHz. At elevated temperatures, Qrr increases to ~180 nC at 175 °C, so layout optimization and gate drive tuning are recommended for >200 kHz operation.

Is the PG-TO263-3-2 package compatible with standard reflow profiles for lead-free assembly?

Yes - the device is MSL1 rated and qualified for peak reflow temperatures up to 260 °C per J-STD-020. Its copper leadframe and matte tin plating ensure reliable wetting and void-free solder joints under standard IPC-A-610 Class 2/3 profiles, including ramp rates up to 3 °C/s and soak times of 60–120 s at 150–200 °C.

IPB120N06S403ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:
160 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
13150 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
167W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

IPB120N06S403ATMA1 FAQ

1.How can I place an order for IPB120N06S403ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120N06S403ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120N06S403ATMA1 reliable?

The price and inventory of IPB120N06S403ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N06S403ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB120N06S403ATMA1?

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IPB120N06S403ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120N06S403ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120N06S403ATMA1?

For technical support, including IPB120N06S403ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N06S403ATMA1 requirements.

6.How does Aetrix verify that IPB120N06S403ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB120N06S403ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N06S403ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB120N06S403ATMA1?

All IPB120N06S403ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N06S403ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120N06S403ATMA1 part is unused and in its original packaging.

Return procedure for IPB120N06S403ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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