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Infineon Technologies IPB120N06S403ATMA2

Part No.:
IPB120N06S403ATMA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB120N06S403ATMA2.pdf
Description:
MOSFET N-CH 60V 120A TO263-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,740

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Product details

Overview

IPB120N06S403ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 60 V VDS, 120 A continuous drain current at TC = 25 °C, and 2.8 mΩ max RDS(on) (SMD version). It delivers high-current switching in automotive DC-DC converters, motor control inverters, and battery disconnect circuits.

For engineers reviewing the IPB120N06S403ATMA2 datasheet, IPB120N06S403ATMA2 pinout, IPB120N06S403ATMA2 application, or IPB120N06S403ATMA2 equivalent, key selection criteria include its 0.9 K/W RthJC, 100% avalanche tested ruggedness, 175 °C operating temperature, and SMD-optimized thermal performance on 6 cm² PCB copper area.

Technical Context

This OptiMOS®-T2 power transistor uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching with 125–160 nC total gate charge and 10120–13150 pF input capacitance. Its gate threshold voltage (2.0–4.0 V) enables robust 10 V gate drive compatibility in 12 V automotive systems.

The integrated body diode supports synchronous rectification and freewheeling with 115 ns reverse recovery time and 110 nC Qrr; its 392 mJ single-pulse avalanche energy rating ensures reliability under inductive load switching stress in motor drives and solenoid controls.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage compatible with 48 V nominal automotive and industrial bus systems
RDS(on) max (SMD)2.8 mΩ - Enables <1.2 W conduction loss at 120 A, reducing heatsink requirements
ID continuous120 A @ TC = 25 °C - Supports high-current loads without derating in forced-air or heatsink-mounted designs
EAS392 mJ - Confirmed single-pulse avalanche capability for reliable operation during short-circuit events
RthJC0.9 K/W - Direct junction-to-case thermal path enables efficient heat transfer to external heatsink
Qg total125–160 nC - Determines gate driver power requirement and switching speed trade-off in PWM applications
tr/tf10 ns / 15 ns - Fast edge rates support >100 kHz switching in high-efficiency SMPS and inverters

Pinout & Package

IPB120N06S403ATMA2 uses the PG-TO263-3-2 surface-mount package (D²PAK), with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminalReceives 10 V logic-level gate drive; requires ≤160 nC charge for full enhancement
Pin 2 (Drain)High-side power outputExposed copper tab - must be soldered to PCB copper pour for thermal and current conduction
Pin 3 (Source)Reference return pathCompletes power loop; connects to low-side switch or ground plane with minimal inductance

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements
100% avalanche testedEach unit subjected to controlled single-pulse avalanche stress to guarantee ruggedness
MSL1 reflow ratingSuitable for lead-free reflow up to 260 °C peak without delamination or parameter shift
175 °C operating temperatureEnables placement near hot components (e.g., engine bay ECUs) without thermal derating
Green product (RoHS)Compliant with EU Directive 2011/65/EU; no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE

Applications

Automotive DC-DC ConvertersElectric Power Steering (EPS) Inverters

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase buck converter topology.

Use Value: 2.8 mΩ RDS(on) minimizes conduction loss at 120 A peak, improving system efficiency by ≥1.8% over 4.5 mΩ alternatives.

Use Scenario: Three-phase inverter driving 300–500 W brushless DC motor in steering column actuator.

IC Role / Device Role / Timing Role: Low-RDS(on) phase-leg switch enabling 10–20 kHz PWM with <15 ns fall time.

Use Value: 0.9 K/W RthJC allows direct heatsink mounting without thermal interface material, simplifying mechanical design.

Battery Disconnect Units (BDU)Industrial Motor Starters

Use Scenario: Solid-state main contactor replacement in 48 V lithium-ion battery packs for commercial EVs.

IC Role / Device Role / Timing Role: Single-pole, high-current isolation switch with integrated avalanche protection.

Use Value: 392 mJ EAS withstands inductive kickback during rapid disconnection, eliminating need for external snubbers.

Use Scenario: Soft-start and overload protection in 3 kW AC induction motor drives for HVAC compressors.

IC Role / Device Role / Timing Role: IGBT co-packaged high-side switch in half-bridge configuration.

Use Value: 120 A continuous rating at 100 °C case temperature supports sustained 100% duty cycle without current derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP120N06S4-03Same die, TO-220-3-1 through-hole package; RthJA = 62 K/W (leaded)Limited to lower-power or prototyping use due to higher thermal resistanceSelect when manual assembly, legacy board layout, or vertical heatsinking is required
IPB120N06S4-03RSame PG-TO263-3-2 package but with tape-and-reel packaging (no "ATMA2" suffix); identical electrical specsNo functional difference; only packaging and reel orientation differSelect for automated SMT production requiring standard 12 mm carrier tape

Compared with IPP120N06S4-03 and IPB120N06S4-03R, IPB120N06S403ATMA2 offers optimized SMD thermal performance and automotive-grade traceability via its ATMA2 ordering code, making it preferred for volume automotive production where MSL1 compliance and PCB thermal management are critical.

Availability

IPB120N06S403ATMA2 is available at Aetrix Electronics and suitable for automotive power modules, industrial motor starters, and battery disconnect units requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB120N06S403ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS®-T2 power transistor family, engineered specifically for high-efficiency, high-reliability switching in 12 V and 48 V automotive subsystems and industrial motor control applications.

FAQ

What is the maximum allowable gate-source voltage for IPB120N06S403ATMA2?

The absolute maximum gate-source voltage is ±20 V. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +10 V for full enhancement and –5 V for fast turn-off, consistent with its 2.0–4.0 V VGS(th) range and plateau voltage of 5.3 V.

Does IPB120N06S403ATMA2 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with 120 A continuous forward current rating, 115 ns reverse recovery time at 120 A and 100 A/µs di/dt, and 110 nC reverse recovery charge. These values enable efficient freewheeling in H-bridge and synchronous rectifier topologies without external diodes.

How does the PG-TO263-3-2 package affect thermal performance compared to TO-220?

The PG-TO263-3-2 package reduces junction-to-case thermal resistance to 0.9 K/W versus ~1.5 K/W for TO-220, enabling 33% higher power dissipation at equal case temperature. Its exposed drain pad must be soldered to ≥6 cm² of 70 µm copper on FR4 for specified RthJA = 40 K/W.

Is IPB120N06S403ATMA2 suitable for use in life-support equipment?

No - Infineon explicitly restricts use in life-support devices or systems unless approved in writing. This part lacks the additional process controls, documentation, and long-term reliability validation required for implantable or critical-care medical applications.

IPB120N06S403ATMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:
160 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
13150 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
167W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

IPB120N06S403ATMA2 FAQ

1.How can I place an order for IPB120N06S403ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120N06S403ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120N06S403ATMA2 reliable?

The price and inventory of IPB120N06S403ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N06S403ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB120N06S403ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120N06S403ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB120N06S403ATMA2?

IPB120N06S403ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120N06S403ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120N06S403ATMA2?

For technical support, including IPB120N06S403ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N06S403ATMA2 requirements.

6.How does Aetrix verify that IPB120N06S403ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB120N06S403ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N06S403ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB120N06S403ATMA2?

All IPB120N06S403ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N06S403ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120N06S403ATMA2 part is unused and in its original packaging.

Return procedure for IPB120N06S403ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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