Infineon Technologies IPB120N06S4H1ATMA1

Overview

IPB120N06S4H1ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 2.1 mΩ max R_DS(on) at 100 A/10 V, and 120 A continuous drain current at T_C = 25 °C. It delivers high-current switching in automotive DC-DC converters and motor control inverters with 175 °C maximum junction temperature and 100% single-pulse avalanche tested robustness.

For engineers reviewing the IPB120N06S4H1ATMA1 datasheet, IPB120N06S4H1ATMA1 pinout, IPB120N06S4H1ATMA1 application, or IPB120N06S4H1ATMA1 equivalent, key selection criteria include its 0.60 K/W thermal resistance (junction-to-case), 2.1 mΩ on-resistance at 100 A, 1060 mJ single-pulse avalanche energy, integrated body diode with 0.95 V typical V_SD, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This MOSFET employs trench-based silicon technology optimized for low conduction and switching losses in high-duty-cycle automotive power stages. Its gate threshold voltage (2.0–4.0 V) enables reliable turn-on with standard 5 V or 10 V gate drivers, while the 22.5–45 nC Q_gd supports fast, controlled switching transitions under 48 V bus conditions.

The device integrates a robust intrinsic body diode with 90 nC reverse recovery charge and 60 ns t_rr, enabling synchronous rectification and freewheeling operation without external diodes in half-bridge configurations. Thermal design is anchored by a validated 0.60 K/W R_thJC, allowing direct heatsink mounting for sustained 120 A conduction at T_C ≤ 100 °C.

Key Specifications

Pinout & Package

IPB120N06S4H1ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK variant), with drain connected to the exposed copper pad for optimal thermal and electrical performance. The three terminals are arranged in a single-row configuration compatible with automated PCB assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP120N06S4H1 and IPB120N06S404ATMA1, IPB120N06S4H1ATMA1 offers the optimal balance of proven SMT manufacturability, validated thermal performance, and cost-effective qualification for volume automotive production-without requiring layout revision or process change.

Availability

IPB120N06S4H1ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering inverters, and on-board chargers requiring stable component supply across multi-year vehicle programs.

Supply support for IPB120N06S4H1ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 family, engineered specifically for high-current, high-reliability automotive power conversion where low R_DS(on), avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB120N06S4H1ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation beyond ±20 V risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V to achieve rated R_DS(on), with transient overshoot held below 15 V using appropriate gate resistor and clamping design.

Does IPB120N06S4H1ATMA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with 120 A continuous forward current rating and 0.6–1.3 V forward voltage at 100 A and 25 °C. Reverse recovery charge is 90 nC and recovery time is 60 ns under specified test conditions (V_R = 30 V, I_F = 120 A, di/dt = 100 A/µs), enabling efficient freewheeling in bridge topologies.

How does the thermal resistance of IPB120N06S4H1ATMA1 impact PCB layout requirements?

With R_thJC = 0.60 K/W, effective thermal performance depends on low-impedance conduction from the exposed drain pad to the heatsink. Layout must provide ≥6 cm² of 70 µm copper on FR4 (single layer), vertical orientation in still air, and minimal thermal via resistance. Reducing copper area below 4 cm² increases junction temperature by >25 K at full load.

Is IPB120N06S4H1ATMA1 suitable for use in life-support equipment?

No. Per Infineon's legal disclaimer, this component is not authorized for use in life-support devices or systems unless explicitly approved in writing by Infineon. Its qualification covers automotive and industrial applications only; safety-critical medical systems require components with dedicated ISO 13485 and IEC 62304 compliance documentation.