Infineon Technologies IPB120N06S4H1ATMA2

Overview

IPB120N06S4H1ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 2.1 mΩ R_DS(on) (max) at V_GS = 10 V and I_D = 100 A, with 175 °C maximum junction temperature. It delivers 120 A continuous drain current at T_C = 25 °C and supports high-current automotive power stages such as DC-DC converters and motor control inverters.

For engineers reviewing the IPB120N06S4H1ATMA2 datasheet, IPB120N06S4H1ATMA2 pinout, IPB120N06S4H1ATMA2 application, or IPB120N06S4H1ATMA2 equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche ruggedness (1060 mJ), gate charge profile (Q_g = 208–270 nC), thermal resistance (R_thJC = 0.60 K/W), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low conduction loss and optimized switching behavior. Its gate threshold voltage (2.0–4.0 V) enables robust drive compatibility with standard 5 V and 10 V logic-level controllers, while its 16.84 nF typical input capacitance and 22.5–45 nC Q_gd support controlled turn-on/turn-off transitions in hard-switched topologies.

The integrated body diode exhibits 0.6–1.3 V forward voltage at 100 A and 25 °C, with 60 ns reverse recovery time and 90 nC Q_rr, enabling efficient synchronous rectification and freewheeling in buck, half-bridge, and H-bridge configurations under high dI/dt conditions.

Key Specifications

Pinout & Package

IPB120N06S4H1ATMA2 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab. The package features copper leadframe, optimized thermal pad layout, and MSL1 rating for lead-free reflow up to 260 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IPP120N06S4H1ATMA1, IPB120N06S4H1ATMA2 offers superior thermal performance on PCBs due to D²PAK's lower R_thJC; versus IPB120N06S406ATMA2, it trades slightly higher R_DS(on) and Q_g for proven field reliability and broader qualification history in production automotive programs.

Availability

IPB120N06S4H1ATMA2 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering inverters, and on-board charger input stages requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB120N06S4H1ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered for high-current, high-reliability automotive power switching applications where low R_DS(on), robust avalanche capability, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB120N06S4H1ATMA2?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V for full enhancement and 0 V or –5 V for guaranteed turn-off, especially in noisy automotive environments where transient coupling may occur.

Does IPB120N06S4H1ATMA2 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic parasitic body diode with 120 A continuous forward current rating. Key parameters include V_SD = 0.6–1.3 V at I_F = 100 A and 25 °C, t_rr = 60 ns, and Q_rr = 90 nC under specified test conditions (V_R = 30 V, di_F/dt = 100 A/µs), making it suitable for freewheeling and synchronous rectification.

How does the thermal resistance of IPB120N06S4H1ATMA2 compare between junction-to-case and junction-to-ambient?

R_thJC is fixed at 0.60 K/W, representing the intrinsic thermal path from die to case. R_thJA varies significantly: 62 K/W on minimal footprint PCB, but drops to 40 K/W with 6 cm² copper cooling area. This highlights the critical role of PCB layout - effective heatsinking requires direct thermal via connection from the exposed drain tab to internal copper planes.

Is IPB120N06S4H1ATMA2 suitable for paralleling multiple devices in high-current applications?

Yes, its positive R_DS(on) temperature coefficient (R_DS(on) rises with junction temperature) promotes natural current sharing. Measured data shows only ~1.8× increase from 25 °C to 175 °C, enabling stable parallel operation without external balancing resistors - provided gate drive impedance and layout symmetry are matched across all paralleled units.