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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB120N08S404ATMA1

Name: IPB120N08S404ATMA1
Brand: Infineon Technologies
SKU: IPB120N08S404ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB120N08S404ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB120N08S404ATMA1.pdf

Description:: MOSFET N-CH 80V 120A D2PAK

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Product details

Overview

IPB120N08S404ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-3-2 package, rated for 80 V V_DS, 4.1 mΩ max R_DS(on) at 10 V V_GS, 120 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature. It delivers high-current switching in automotive DC-DC converters, motor control inverters, and battery disconnect circuits.

For engineers reviewing the IPB120N08S404ATMA1 datasheet, IPB120N08S404ATMA1 pinout, IPB120N08S404ATMA1 application, or IPB120N08S404ATMA1 equivalent, key selection criteria include its 0.84 K/W R_thJC, 100% avalanche-tested ruggedness, SMD-compatible thermal performance, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This MOSFET employs trench-based silicon technology optimized for low conduction and switching losses in high-duty-cycle automotive power stages. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 70–95 nC total gate charge supports efficient PWM operation up to 100 kHz in hard-switched topologies.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 100 A and 70 ns reverse recovery time, enabling synchronous rectification replacement in bidirectional energy transfer applications such as 48 V mild-hybrid battery management systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V automotive bus with 67 % derating margin against transients per ISO 7637-2 Pulse 5a.
R_DS(on) max	4.1 mΩ - Enables ≤1.2 W conduction loss at 120 A, critical for thermally constrained SMD layouts.
I_D continuous	120 A @ T_C = 25 °C - Validated for sustained high-current operation with external heatsinking.
E_AS	310 mJ - Confirmed single-pulse avalanche energy rating ensures reliability during inductive load turn-off.
R_thJC	0.84 K/W - Directly determines junction-to-case temperature rise; enables accurate thermal design with measured case temp.
Q_g total	70–95 nC - Defines gate driver power requirement and switching speed trade-off in 12–48 V systems.
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers without level-shifting.

Pinout & Package

IPB120N08S404ATMA1 uses the PG-TO263-3-2 surface-mount package (D²PAK), featuring isolated drain tab for PCB copper area thermal coupling. The package supports reflow up to 260 °C (MSL1) and is RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground plane or current-sense shunt for feedback.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; routed away from noisy power traces.
Pin 3 (Drain)	Power output	Exposed copper tab - must be soldered to ≥6 cm² PCB copper pour for thermal performance.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood environments including temperature cycling, humidity, and mechanical shock.
100% avalanche tested	Each unit passes single-pulse avalanche stress test at I_AS = 99 A, ensuring field robustness in inductive switching.
OptiMOS™-T2 trench architecture	Reduces R_DS(on) × Q_g figure-of-merit by 25 % vs. prior generation, improving efficiency in 10–100 kHz converters.
Integrated body diode	Enables freewheeling in half-bridge configurations without external diode; t_rr = 70 ns minimizes commutation loss.
175 °C operating temperature	Permits placement near heat sources (e.g., engine bay ECUs) without derating beyond datasheet limits.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Inverters

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in interleaved buck topology operating at 100–200 kHz.

Use Value: 4.1 mΩ R_DS(on) reduces conduction loss by >30 % vs. legacy 6 mΩ devices, lowering thermal load on compact heatsinks.

Use Scenario: Three-phase inverter driving 3 kW brushless motor in column-assist EPS modules.

IC Role / Device Role / Timing Role: Low-side switching element handling 120 A peak phase current with 10 µs dead-time tolerance.

Use Value: 0.84 K/W R_thJC allows direct thermal coupling to aluminum housing, eliminating need for thermal interface pads.

Battery Disconnect Units (BDU)

On-Board Chargers (OBC) Input Stage

Use Scenario: Solid-state contactor replacing electromechanical relays in 48 V battery protection circuits.

IC Role / Device Role / Timing Role: Bidirectional blocking switch with integrated body diode supporting regenerative braking current flow.

Use Value: 310 mJ E_AS withstands fault currents during short-circuit events without failure, meeting ASIL-B functional safety requirements.

Use Scenario: Active front-end PFC stage in 6.6 kW OBC converting AC grid to 400 V DC bus.

IC Role / Device Role / Timing Role: Boost switch in totem-pole PFC configuration, switching at 65 kHz with zero-voltage transition.

Use Value: 70–95 nC Q_g enables fast, low-loss turn-on using 2 A gate drivers, reducing switching loss by 18 % over 120 nC alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP120N08S4-04	TO-220-3-1 through-hole package; identical electrical specs but higher R_thJA (62 K/W vs. 40 K/W on PCB).	Suitable for prototyping or low-volume assemblies where manual soldering and heatsink mounting are preferred.	Select when board-level thermal management is impractical and discrete heatsinking is available.
IPB120N08S405ATMA1	Same package; 3.5 mΩ typ R_DS(on) (vs. 3.8 mΩ typ), 5.2 V gate plateau voltage (vs. 5.2 V), same Q_g.	Offers marginally lower conduction loss in high-efficiency server PSU designs where 0.3 mΩ reduction justifies cost premium.	Choose only if system-level testing confirms measurable efficiency gain at full load and elevated temperature.

Compared with IPP120N08S4-04, IPB120N08S404ATMA1 provides superior thermal performance in SMD layouts; compared with IPB120N08S405ATMA1, it offers identical gate drive behavior at a lower cost with negligible R_DS(on) trade-off in most automotive duty cycles.

Availability

IPB120N08S404ATMA1 is available at Aetrix Electronics and suitable for automotive battery management, electric power steering, and onboard charger designs requiring stable component supply across multi-year production programs.

Supply support for IPB120N08S404ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-current, high-reliability automotive power conversion and motor control applications.

FAQ

What is the maximum allowable gate-source voltage for IPB120N08S404ATMA1?

The absolute maximum V_GS is ±20 V. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended drive range is 0 V to 12 V for optimal R_DS(on) and lifetime reliability, with 10 V ensuring full enhancement across temperature and process variation.

Does IPB120N08S404ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to dampen ringing and control dV/dt. For 100 kHz switching with a 2 A gate driver, a 3.3 Ω series resistor is recommended based on gate charge (70–95 nC) and typical driver output impedance. Lower values increase switching speed but risk overshoot; higher values reduce EMI but raise switching loss.

Can IPB120N08S404ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.4 %/°C) enables stable current sharing. Parallel operation requires matched layout symmetry, individual gate resistors (≤5 Ω), and thermal coupling to ensure ΔT_j < 5 °C between devices. Derate total current by 15 % versus single-device rating.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the body diode is rated for 120 A continuous forward current at T_C = 25 °C and has been characterized for 70 ns t_rr and 130 nC Q_rr. For sustained freewheeling, ensure junction temperature remains ≤150 °C and limit reverse recovery di/dt to ≤100 A/µs to avoid voltage overshoot exceeding 80 V.

IPB120N08S404ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB120N08S404ATMA1 FAQ

1.How can I place an order for IPB120N08S404ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120N08S404ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120N08S404ATMA1 reliable?

The price and inventory of IPB120N08S404ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120N08S404ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB120N08S404ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120N08S404ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB120N08S404ATMA1?

IPB120N08S404ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120N08S404ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120N08S404ATMA1?

For technical support, including IPB120N08S404ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120N08S404ATMA1 requirements.

6.How does Aetrix verify that IPB120N08S404ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB120N08S404ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120N08S404ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB120N08S404ATMA1?

All IPB120N08S404ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120N08S404ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120N08S404ATMA1 part is unused and in its original packaging.

Return procedure for IPB120N08S404ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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