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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB120P04P4L03ATMA1

Name: IPB120P04P4L03ATMA1
Brand: Infineon Technologies
SKU: IPB120P04P4L03ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB120P04P4L03ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB120P04P4L03ATMA1.pdf

Description:: MOSFET P-CH 40V 120A D2PAK

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Inventory:4,165

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Product details

Overview

IPB120P04P4L03ATMA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET in PG-TO263-3-2 package, rated for -40 V V_DS, 3.1 mΩ R_DS(on) at V_GS = -10 V and I_D = -100 A, with 175 °C maximum junction temperature and AEC-Q101 qualification. It serves as a high-current power switch in automotive body control modules, battery disconnect circuits, and reverse polarity protection.

For engineers reviewing the IPB120P04P4L03ATMA1 datasheet, IPB120P04P4L03ATMA1 pinout, IPB120P04P4L03ATMA1 application, or IPB120P04P4L03ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (78 mJ), thermal resistance (1.1 K/W j–case), and AEC-Q101 compliance for automotive-grade reliability.

Technical Context

This device implements a trench-based OptiMOS®-P2 silicon process optimized for low R_DS(on) and fast switching in high-side and low-side configurations. Its gate threshold voltage range (–1.2 V to –2.2 V) ensures robust turn-on with standard 3.3 V/5 V logic-level drivers, while integrated body diode supports synchronous rectification and freewheeling in DC–DC converters.

The MOSFET features fully characterized dynamic parameters: C_iss = 11.38–15 nF, Q_g = 180–234 nC, and t_r/t_f = 16 ns/57 ns under defined test conditions. Avalanche ruggedness is validated per single-pulse E_AS = 78 mJ at I_D = –60 A, enabling reliable operation in inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–40 V - Maximum drain-source blocking voltage for 12 V/24 V automotive systems
R_DS(on) @ V_GS = –10 V	2.6–3.1 mΩ - Enables <1.2 W conduction loss at –100 A in SMD layout
I_D continuous @ T_C = 25 °C	–120 A - Supported by TO263-3 package with exposed drain tab for thermal dissipation
E_AS	78 mJ - Confirmed single-pulse avalanche capability for inductive load interruption
T_j max	+175 °C - Allows operation in engine bay or under-hood environments without derating
Q_g	180–234 nC - Determines gate driver current requirement (~2.3 A peak for 100 ns rise time)
AEC-Q101	Qualified - Meets stress testing requirements for automotive electronic components

Pinout & Package

IPB120P04P4L03ATMA1 uses the PG-TO263-3-2 surface-mount package with exposed drain pad for thermal and electrical connection. The package has three terminals: Gate (pin 1), Drain (pin 2 + metal tab), Source (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal accepting logic-level negative voltage; requires <234 nC charge for full turn-on
Pin 2 + Tab	Drain	Main high-current path; electrically and thermally connected to PCB copper area via exposed pad
Pin 3	Source	Reference node for gate drive; connects to system ground or floating rail in high-side configuration

Key Features

Feature	Design Value
Logic-level gate drive	Turns on fully at –4.5 V, compatible with 3.3 V microcontrollers and automotive CAN/LIN transceivers
Low R_DS(on) SMD version	3.1 mΩ typical at –100 A enables >96% efficiency in 12 V battery-switching applications
100% avalanche tested	Each unit validated for 78 mJ single-pulse energy, eliminating need for external snubbers in relay replacement
MSL1 reflow rating	Suitable for lead-free reflow up to 260 °C peak, supporting automated SMT assembly without moisture sensitivity concerns
Integrated body diode	V_SD = –1.0 to –1.3 V at –100 A enables efficient freewheeling in buck converters and motor drives

Applications

Automotive Body Control Module

Battery Disconnect Unit

Use Scenario: Controlling headlight, wiper, and seat actuator loads in centralized BCM architecture.

IC Role / Device Role / Timing Role: High-side power switch managing load enable/disable with PWM dimming support.

Use Value: Low R_DS(on) minimizes heat generation during sustained 10–30 A loads; AEC-Q101 ensures field reliability over 15-year vehicle lifetime.

Use Scenario: Isolating 12 V starter battery from auxiliary systems during engine cranking or fault conditions.

IC Role / Device Role / Timing Role: Reverse polarity and overcurrent protection switch placed between battery and distribution bus.

Use Value: 175 °C rating allows mounting near battery terminals; avalanche ruggedness handles load dump transients up to 35 V.

Reverse Polarity Protection

48 V Mild Hybrid DC–DC Converter

Use Scenario: Preventing damage from incorrect battery connection in aftermarket infotainment or ADAS modules.

IC Role / Device Role / Timing Role: Low-loss series pass element in input protection stage before LDO or buck controller.

Use Value: 3.1 mΩ R_DS(on) limits voltage drop to <310 mV at 100 A, avoiding thermal shutdown during cold-crank events.

Use Scenario: Synchronous rectifier in bidirectional buck–boost converter linking 12 V and 48 V domains in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side freewheeling switch operating at 100–300 kHz with body diode recovery (t_rr = 54 ns).

Use Value: Fast Q_rr = 60 nC and low Crss reduce switching losses; SMD package enables compact planar magnetics integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP120P04P4L-03	TO-220-3-1 through-hole package; R_DS(on) = 2.9–3.4 mΩ @ –10 V; higher R_thJA (62 K/W)	Preferred for prototyping, manual assembly, or legacy board designs requiring through-hole mounting	Select when thermal management relies on heatsink clamping rather than PCB copper area
IPI120P04P4L-03	TO-262-3-1 package; identical R_DS(on) spec but lower profile than TO-220; same MSL1 rating	Suitable for space-constrained modules where height clearance <10 mm is required	Choose when board height budget prohibits TO-263 or TO-220, but SMD reflow is still preferred

Compared with IPP120P04P4L-03 and IPI120P04P4L-03, IPB120P04P4L03ATMA1 offers lowest thermal resistance (1.1 K/W j–case) and best PCB-integrated cooling performance, making it optimal for high-power-density automotive SMT designs where thermal vias and copper pour are available.

Availability

IPB120P04P4L03ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, battery management systems, and industrial power supplies requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for IPB120P04P4L03ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS®-P2 product line, engineered specifically for high-efficiency, high-reliability P-channel switching in 12 V and 24 V automotive power networks.

FAQ

What is the maximum gate–source voltage rating for IPB120P04P4L03ATMA1?

The absolute maximum gate–source voltage is –16 V. Exceeding this value risks permanent gate oxide damage. Recommended operating range is –10 V to 0 V for reliable enhancement-mode switching. Gate drive circuits must include clamping or Zener protection if sourced from unregulated rails.

Does IPB120P04P4L03ATMA1 require a gate resistor for safe operation?

Yes - a gate resistor (typically 3.5 Ω to 10 Ω) is required to control dV/dt and prevent oscillation during switching. The datasheet specifies R_G = 3.5 Ω for dynamic parameter characterization. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses.

Can IPB120P04P4L03ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables current sharing across paralleled units. Layout symmetry, matched gate drive paths, and thermal coupling are critical. Derate total current by 15% versus sum of individual ratings to ensure stability under transient thermal gradients.

Is the body diode suitable for continuous freewheeling in a buck converter?

Yes - the integrated body diode is rated for –120 A continuous forward current at T_C = 25 °C and exhibits t_rr = 54 ns and Q_rr = 60 nC. For high-frequency operation (>200 kHz), synchronous rectification using a second MOSFET is recommended to minimize conduction loss.

IPB120P04P4L03ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:: 234 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 15000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB120P04P4L03ATMA1 FAQ

1.How can I place an order for IPB120P04P4L03ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB120P04P4L03ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB120P04P4L03ATMA1 reliable?

The price and inventory of IPB120P04P4L03ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB120P04P4L03ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB120P04P4L03ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB120P04P4L03ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB120P04P4L03ATMA1?

IPB120P04P4L03ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB120P04P4L03ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB120P04P4L03ATMA1?

For technical support, including IPB120P04P4L03ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB120P04P4L03ATMA1 requirements.

6.How does Aetrix verify that IPB120P04P4L03ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB120P04P4L03ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB120P04P4L03ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB120P04P4L03ATMA1?

All IPB120P04P4L03ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB120P04P4L03ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB120P04P4L03ATMA1 part is unused and in its original packaging.

Return procedure for IPB120P04P4L03ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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