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Infineon Technologies IPB12CNE8N G
- Part No.:
- IPB12CNE8N G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB12CNE8N G.pdf
- Description:
- MOSFET N-CH 85V 67A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,339
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Product details
Overview
IPB12CNE8N G from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO263-3 (D²PAK) package, rated for 85 V VDS, 67 A continuous drain current at TC = 25 °C, and 12.4 mΩ RDS(on) max at VGS = 10 V and ID = 67 A. It operates up to 175 °C junction temperature and is optimized for high-frequency switching in DC-DC converters and synchronous rectification in server power supplies.
For engineers reviewing the IPB12CNE8N G datasheet, IPB12CNE8N G pinout, IPB12CNE8N G application, or IPB12CNE8N G equivalent, key selection criteria include its 9.2 mΩ typical RDS(on), 48 nC total gate charge, 3260 pF input capacitance, 1.2 K/W RthJC, and JEDEC-qualified reliability for industrial power conversion.
Technical Context
This OptiMOS®2 device uses planar silicon technology with optimized cell pitch and trench-assisted channel design to achieve low gate charge × RDS(on) figure-of-merit (FOM), enabling efficient operation above 300 kHz in hard-switched topologies. Its 175 °C maximum junction temperature rating supports compact thermal design without derating in convection-cooled 1U server PSUs.
The integrated body diode exhibits 103 ns reverse recovery time and 255 nC Qrr at IF = 67 A and diF/dt = 100 A/µs, making it suitable for synchronous rectification where diode conduction loss and commutation stress must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 85 V - Supports 48 V input bus architectures with 20 % margin against transients in telecom and server power. |
| RDS(on) max | 12.4 mΩ @ VGS = 10 V, ID = 67 A - Enables <1.5 W conduction loss at full load in 50 A output stages. |
| Qg | 48–64 nC - Low gate drive energy reduces controller IC loading and enables use with standard 1 A peak gate drivers. |
| EAS | 154 mJ @ ID = 67 A, RGS = 25 Ω - Withstands single-pulse avalanche events in unclamped inductive switching. |
| RthJC | 1.2 K/W - Allows direct heatsink mounting for thermal resistance below 2.5 K/W in 1U airflow-constrained enclosures. |
| tr/tf | 21–31 ns / 8–12 ns - Supports clean, fast switching transitions with minimal overlap loss in 500 kHz+ phase-shifted full-bridge designs. |
Pinout & Package
IPB12CNE8N G is housed in PG-TO263-3 (D²PAK) package: a surface-mount variant of TO-263 with isolated drain tab, 3-pin configuration, and JEDEC-standard footprint for automated assembly and high-current PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (low-side reference) | Connected to power ground plane; carries full load current with minimal parasitic inductance in synchronous buck output stage. |
| Pin 2 (Gate) | Control input | Receives PWM signal from controller; requires <64 nC charge to fully enhance; sensitive to ringing due to 1.5 Ω internal gate resistance. |
| Pin 3 (Drain) | High-side switch node | Exposed copper pad on backside - electrically connected to drain; must be soldered to large copper area for thermal and current handling. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | ~595 mΩ·nC - Reduces combined conduction and switching losses more effectively than legacy MOSFETs in 400–600 kHz LLC resonant converters. |
| 175 °C Tj,max | Enables sustained operation at elevated ambient temperatures (e.g., >70 °C inside sealed server chassis) without forced air derating. |
| JEDEC qualification | Qualified per JESD22-A108 (temperature cycling), JESD22-A110 (HTOL), and J-STD-20 (reflow profile) for industrial power supply lifetime requirements. |
| Pb-free & RoHS | Lead-free matte tin plating on drain tab and leads - compatible with lead-free reflow processes and meets EU RoHS Directive 2011/65/EU Annex II. |
Applications
| Server VRM | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: High-density 12 V → 1.2 V point-of-load regulation in dual-socket Xeon servers. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; switches at 500 kHz with 100 ns dead-time control. Use Value: 12.4 mΩ RDS(on) and 103 ns trr reduce output stage loss by 18 % vs. predecessor IPB08N06LG, improving efficiency from 92.1 % to 93.7 % at 50 A. |
Use Scenario: 48 V input to 24 V isolated output in programmable logic controller (PLC) power module. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology operating at 350 kHz. Use Value: 154 mJ EAS withstands leakage inductance spikes during clamp reset, eliminating need for external snubber and reducing BOM count by 3 components. |
| Telecom Rectifier | Motor Drive Inverter Stage |
|
Use Scenario: 54 V nominal input AC/DC front-end rectification in 3 kW telecom rectifier shelf. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge with ZVS. Use Value: 9.2 mΩ typical RDS(on) cuts conduction loss by 2.1 W per device at 60 A, lowering heatsink size requirement by 35 %. |
Use Scenario: 24 V three-phase inverter for brushless DC motor in HVAC blower system. IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-driven half-bridge leg driving 15 A peak motor current. Use Value: 1.2 K/W RthJC allows direct mounting to aluminum extrusion heatsink, maintaining Tj < 135 °C at 45 °C ambient without fan. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB075N08N3 G | 80 V VDS, 75 A ID, 7.5 mΩ RDS(on) max, PG-TO263-3, newer OptiMOS™3 generation | Higher current rating and lower RDS(on) but higher Qg (72 nC); requires stronger gate driver | Preferred for new designs targeting >60 A output with space for upgraded gate drive; not drop-in due to different SOA curve. |
| IPP120N08N3 G | 80 V VDS, 120 A ID, 12.0 mΩ RDS(on) max, PG-TO220-3, same OptiMOS®2 family | Same RDS(on) spec but TO-220 package; higher RthJC (1.4 K/W); through-hole mounting only | Valid alternative if board layout uses through-hole and thermal interface permits 0.2 K/W higher junction-to-case resistance. |
Compared with IPB12CNE8N G, IPB075N08N3 G delivers lower conduction loss at higher currents but increases switching loss and gate drive demand, while IPP120N08N3 G offers identical on-resistance in a thermally less efficient through-hole package-making IPB12CNE8N G optimal for surface-mount, airflow-limited, medium-current applications.
Availability
IPB12CNE8N G is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifiers requiring stable component supply across multi-year production cycles.
Supply support for IPB12CNE8N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.
IPB12CNE8N G belongs to the OptiMOS®2 power transistor product line, designed specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum allowable gate-source voltage for IPB12CNE8N G?
The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable PWM control, gate drive should be clamped between 0 V and 12 V, with 10 V recommended for full enhancement and lowest RDS(on).
Can IPB12CNE8N G be used in avalanche mode repeatedly?
No-its 154 mJ single-pulse EAS rating is intended for fault tolerance, not repetitive operation. Repeated avalanche stress degrades RDS(on) and threshold voltage over time. Designers must implement primary-side overvoltage protection or snubbers to avoid repeated avalanche conditions.
Is the drain tab electrically isolated from the package outline in PG-TO263-3?
Yes-the drain tab in the PG-TO263-3 package is electrically connected only to the drain terminal and is insulated from the mounting surface by the molded plastic body. Thermal interface material must be non-conductive unless the heatsink is referenced to drain potential.
How does temperature affect RDS(on) in IPB12CNE8N G?
RDS(on) increases linearly with junction temperature: from 9.2 mΩ typ at 25 °C to ~25 mΩ at 175 °C. The datasheet provides RDS(on) = f(Tj) curves (Figure 9), confirming +0.13 %/°C average TC, critical for thermal design margining in high-ambient environments.
IPB12CNE8N G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 85 V
- Current - Continuous Drain (Id) @ 25°C:
- 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 12.9mOhm @ 67A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4340 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IPB12CNE8N G FAQ
1.How can I place an order for IPB12CNE8N G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB12CNE8N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB12CNE8N G reliable?
The price and inventory of IPB12CNE8N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB12CNE8N G is usually 5 days.
3.What payment methods are accepted for IPB12CNE8N G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB12CNE8N G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB12CNE8N G?
IPB12CNE8N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB12CNE8N G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB12CNE8N G?
For technical support, including IPB12CNE8N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB12CNE8N G requirements.
6.How does Aetrix verify that IPB12CNE8N G is sourced from the original manufacturer or authorized distributors?
All IPB12CNE8N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB12CNE8N G meets industry standards.
7.What is the process for return or replacement of IPB12CNE8N G?
All IPB12CNE8N G units undergo pre-shipment inspection (PSI). If there is an issue with IPB12CNE8N G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB12CNE8N G part is unused and in its original packaging.
Return procedure for IPB12CNE8N G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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