Infineon Technologies IPB136N08N3 G

Overview

IPB136N08N3 G from Infineon Technologies is a 80 V, 136 A, 3.5 mΩ (typ.) N-channel enhancement-mode power MOSFET in PG-TO-263-3 package, optimized for high-efficiency DC-DC converters and motor control inverters operating at 100 kHz switching frequency with <18 nC total gate charge and avalanche-rated ruggedness.

For engineers reviewing the IPB136N08N3 G datasheet, IPB136N08N3 G pinout, IPB136N08N3 G application, or IPB136N08N3 G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, single-pulse avalanche energy rating (E_AS = 470 mJ), thermal resistance (R_thJC = 0.5 K/W), and SOA compliance up to 100 °C case temperature.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve low conduction loss while maintaining fast switching speed. Its gate threshold voltage (V_GS(th)) of 2.0–3.5 V enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

The integrated body diode features soft recovery (t_rr = 65 ns typ., Q_rr = 78 nC) and low forward voltage (V_SD = 1.3 V at I_F = 68 A), supporting synchronous rectification and bidirectional current handling in half-bridge topologies.

Key Specifications

Pinout & Package

IPB136N08N3 G uses the PG-TO-263-3 (D²-Pak) package with exposed drain pad on the bottom side for enhanced thermal performance. The package footprint supports ≥10 cm² copper area per layer for optimal heat spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IPP139N08N3 G, IPB136N08N3 G trades 0.3 mΩ higher R_DS(on) for 1.5 nC lower Q_g, making it more suitable for high-frequency (>100 kHz) operation; versus IPB180N08N3 G, it offers tighter thermal management in space-constrained layouts due to smaller die and lower C_iss.

Availability

IPB136N08N3 G is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, onboard EV chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for IPB136N08N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-efficiency, high-power-density switching applications in 48–80 V systems where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. For reliable continuous operation, Infineon specifies a maximum T_j of 150 °C under steady-state conditions. Derating begins at T_C = 100 °C per the SOA curve, and thermal design must ensure R_thJA ≤ 1.2 K/W with ≥10 cm² 2-oz copper on both sides for 136 A conduction.

Does IPB136N08N3 G support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (0.65 mΩ/K) ensures inherent current sharing when paralleled. Designers must match gate loop inductance (<5 nH) and use Kelvin source connections to avoid oscillation; typical parallel configurations use 2–4 devices with individual gate resistors (10 Ω) and local 100 nF ceramic decoupling.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - the body diode exhibits soft recovery (t_rr = 65 ns, Q_rr = 78 nC) and low forward voltage (V_SD = 1.3 V at 68 A), enabling efficient synchronous rectification in buck and LLC topologies up to 300 kHz. No external Schottky is required, though gate timing must avoid shoot-through during dead-time transitions.

What is the recommended PCB layout for thermal performance?

Use a minimum 10 cm² exposed copper pad (2-oz Cu) connected via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) to internal ground planes. The drain tab must be soldered directly to this pad; source and gate traces should be ≥2 mm wide with controlled impedance (≤5 Ω gate loop). Avoid routing high-dv/dt signals near the gate pad to prevent coupling.