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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB136N08N3GATMA1

Name: IPB136N08N3GATMA1
Brand: Infineon Technologies
SKU: IPB136N08N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB136N08N3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB136N08N3GATMA1.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

IPB136N08N3GATMA1 from Infineon Technologies is a 75 V, 136 A, 3.2 mΩ N-channel enhancement-mode power MOSFET in PG-TO-263-3 (D²-Pak) package, optimized for high-efficiency DC-DC converters and motor control inverters operating at 100 kHz switching frequency with gate charge of 92 nC and avalanche-rated ruggedness.

For engineers reviewing the IPB136N08N3GATMA1 datasheet, IPB136N08N3GATMA1 pinout, IPB136N08N3GATMA1 application, or IPB136N08N3GATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, single-pulse avalanche energy rating (E_AS = 435 mJ), thermal resistance (R_thJC = 0.5 K/W), and qualified AEC-Q101 reliability for automotive-grade power stages.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology with trench-gate process and optimized cell layout to achieve low conduction loss and fast switching performance. It features a fully avalanche-rated structure and integrated body diode with t_rr = 55 ns and Q_rr = 78 nC under specified conditions.

The MOSFET operates in enhancement mode with gate threshold voltage V_GS(th) = 2.0–4.0 V and exhibits stable R_DS(on) over temperature (3.2 mΩ typ. at T_j = 25°C, 5.4 mΩ max at T_j = 175°C), supporting robust operation in high-current, high-temperature environments such as on-board chargers and traction inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum drain-source blocking voltage; supports 48 V nominal bus systems with 50% safety margin.
I_D (continuous)	136 A @ T_C = 25°C - Sustains high DC load current in compact heatsink designs.
R_DS(on)	3.2 mΩ typ. @ V_GS = 10 V - Enables <1 W conduction loss at 175 A, critical for efficiency in 1–3 kW converters.
Q_g	92 nC - Total gate charge determines driver strength requirement; compatible with standard 2 A peak gate drivers.
E_AS	435 mJ - Single-pulse avalanche energy rating ensures reliable operation during inductive switching transients.
R_thJC	0.5 K/W - Junction-to-case thermal resistance enables >100 W continuous dissipation with moderate heatsinking.
t_r/t_f	17 ns / 22 ns @ I_D = 50 A - Fast switching transitions reduce switching losses in hard-switched topologies.

Pinout & Package

IPB136N08N3GATMA1 uses the PG-TO-263-3 (D²-Pak) surface-mount package with exposed drain pad for thermal and electrical connection. The package has three terminals: Drain (tab), Source (pin 1), and Gate (pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to copper tab	Provides low-inductance, high-current path to PCB ground plane or heatsink; requires solder mask opening and thermal via array.
Source (Pin 1)	Reference node for gate drive and current sensing	Serves as return path for load current and reference for gate-source voltage; must be routed with minimal inductance for stable switching.
Gate (Pin 2)	Control electrode for channel formation	Receives PWM signal from driver IC; requires RC snubber and gate resistor tuning to balance dV/dt and EMI.

Key Features

Feature	Design Value
Avalanche-rated ruggedness	Guaranteed single-pulse E_AS = 435 mJ eliminates need for external clamping in inductive load circuits.
Low gate charge (Q_g = 92 nC)	Reduces driver power consumption and enables higher switching frequencies without excessive gate drive loss.
Optimized body diode (t_rr = 55 ns, Q_rr = 78 nC)	Minimizes reverse recovery loss and associated voltage overshoot in synchronous rectification and half-bridge freewheeling.
AEC-Q101 qualified	Validated for automotive powertrain applications including 48 V mild-hybrid systems and EPS control modules.
Thermal resistance R_thJC = 0.5 K/W	Supports >100 W continuous power dissipation with standard 2-layer PCB copper area and thermal vias.

Applications

Automotive On-Board Charger (OBC)

Industrial Motor Drive Inverter

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11 kW OBC units for BEVs.

IC Role / Device Role / Timing Role: High-side and low-side switch in interleaved LLC and SiC-assisted buck-boost stages.

Use Value: 3.2 mΩ R_DS(on) and 92 nC Q_g enable >97% peak efficiency while meeting ISO 16750-2 surge immunity requirements.

Use Scenario: 3-phase inverter driving 5–10 kW permanent magnet motors in CNC machines and pumps.

IC Role / Device Role / Timing Role: Power switch in 6-pack topology with 10–20 kHz PWM carrier frequency.

Use Value: Avalanche rating and 136 A current capability ensure fault tolerance during short-circuit events and stall conditions.

Server PSU Primary-Side Switch

Renewable Energy Solar Inverter

Use Scenario: Primary-side switch in 3.3 kW CRPS-compliant server power supplies using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-voltage, high-current switch handling 380 V DC bus with 100 kHz switching.

Use Value: Low C_oss (1040 pF) and fast t_f (22 ns) reduce turn-off loss and improve light-load efficiency.

Use Scenario: DC link switching in string inverters converting 600–1000 V PV input to grid-synchronized AC output.

IC Role / Device Role / Timing Role: DC bus switch in boost stage and H-bridge output stage with unidirectional current flow.

Use Value: AEC-Q101 qualification and 175°C T_j(max) support extended field lifetime in outdoor enclosures with passive cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP139N08N3 G	R_DS(on) = 3.0 mΩ (lower), Q_g = 95 nC (slightly higher), same package and voltage rating	Marginally better conduction loss but identical thermal and avalanche specs; suitable where <0.2 mΩ reduction justifies cost premium	Select when optimizing for lowest possible conduction loss at 25°C, accepting minor gate drive overhead.
IPI139N08N3 G	Same R_DS(on) and Q_g as IPP139N08N3 G, but in PG-TO-220 package (through-hole)	Lower thermal performance (R_thJC = 0.7 K/W) and no AEC-Q101 qualification; intended for industrial non-automotive use	Choose only for legacy through-hole designs requiring manual assembly or where automotive qualification is unnecessary.

Compared with IPP139N08N3 G and IPI139N08N3 G, IPB136N08N3GATMA1 offers the optimal balance of automotive qualification, surface-mount compatibility, and thermal performance-making it preferred for new-generation OBC, EPS, and industrial inverter designs requiring AEC-Q101 compliance and D²-Pak manufacturability.

Availability

IPB136N08N3GATMA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial motor drives, and server power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPB136N08N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-current, high-frequency switching in automotive and industrial power conversion systems where efficiency, ruggedness, and reliability are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature T_j(max) is 175°C, validated per AEC-Q101 stress testing. Continuous operation at this temperature requires thermal design ensuring case temperature remains ≤125°C under worst-case ambient and airflow conditions, with R_thJC = 0.5 K/W and sufficient PCB copper area for heat spreading.

Is IPB136N08N3GATMA1 suitable for synchronous rectification?

Yes-it supports synchronous rectification due to its low R_DS(on) (3.2 mΩ), fast body diode (t_rr = 55 ns), and low Q_rr (78 nC). Its gate threshold voltage range (2.0–4.0 V) allows reliable turn-on with standard 5 V logic-level drivers, and the D²-Pak package facilitates low-inductance source routing essential for high-frequency SR control.

Does this MOSFET require a negative gate voltage for safe turn-off?

No-turn-off is reliably achieved with 0 V gate drive. The device has no requirement for negative gate bias; however, applying –5 V can improve dV/dt immunity in high-noise environments. Standard 0–12 V gate drive is sufficient for full enhancement and safe commutation in all documented applications.

How does the avalanche rating impact system-level protection design?

The guaranteed 435 mJ single-pulse avalanche energy allows the MOSFET to absorb inductive energy during unexpected short circuits or load disconnection without external snubbers. This simplifies protection circuitry and improves system robustness in motor drives and DC-DC converters where transient overvoltage events are common and predictable.

IPB136N08N3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 33µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1730 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB136N08N3GATMA1 FAQ

1.How can I place an order for IPB136N08N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB136N08N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB136N08N3GATMA1 reliable?

The price and inventory of IPB136N08N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB136N08N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPB136N08N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB136N08N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB136N08N3GATMA1?

IPB136N08N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB136N08N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB136N08N3GATMA1?

For technical support, including IPB136N08N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB136N08N3GATMA1 requirements.

6.How does Aetrix verify that IPB136N08N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB136N08N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB136N08N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPB136N08N3GATMA1?

All IPB136N08N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB136N08N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB136N08N3GATMA1 part is unused and in its original packaging.

Return procedure for IPB136N08N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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