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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB14N03LA

Name: IPB14N03LA
Brand: Infineon Technologies
SKU: IPB14N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB14N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB14N03LA.pdf

Description:: MOSFET N-CH 25V 30A TO263-3

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Product details

Overview

IPB14N03LA from Infineon Technologies is a logic-level N-channel OptiMOS®2 power MOSFET in P-TO263-3-2 package, rated for 25 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 13.6 mΩ R_DS(on) (max) at V_GS = 10 V, I_D = 30 A in SMD version-designed for high-frequency DC/DC converters requiring low conduction loss and robust dv/dt immunity.

For engineers reviewing the IPB14N03LA datasheet, IPB14N03LA pinout, IPB14N03LA application, or IPB14N03LA equivalent, key selection criteria include its 6 kV/µs dv/dt rating, 175 °C maximum junction temperature, gate plateau voltage of 3.4 V, 9.3 nC total gate charge, and thermal resistance R_thJC of 3.2 K/W-critical for synchronous rectification and high-efficiency buck converter designs.

Technical Context

This device employs a trench-based silicon process optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling fast switching with minimal conduction and switching losses. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) ensures full enhancement with 3.3 V or 5 V drive, while the integrated body diode supports synchronous FET operation with Q_rr = 10 nC at 400 A/µs di/dt.

The MOSFET features dv/dt ruggedness up to 6 kV/µs under specified conditions (I_D = 30 A, V_DS = 20 V, di/dt = 200 A/µs), and avalanche-rated for single-pulse E_AS = 60 mJ at I_D = 24 A-enabling reliable operation in hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage; suitable for 12 V input bus systems with margin against transients.
R_DS(on) max	13.6 mΩ at V_GS = 10 V, I_D = 30 A (SMD version) - Enables <1 W conduction loss at 30 A, reducing heatsink requirements.
Q_g total	9.3 nC - Low gate charge minimizes driver power and enables >1 MHz switching in compact DC/DC stages.
dv/dt rating	6 kV/µs - Ensures immunity to parasitic turn-on in high-speed half-bridge configurations without gate clamping.
R_thJC	3.2 K/W - Junction-to-case thermal resistance allows direct mounting to heatsinks for sustained 30 A operation.
T_j,max	175 °C - Extended temperature capability supports operation in sealed industrial enclosures or automotive under-hood environments.
Q_rr	10 nC - Low reverse recovery charge reduces switching loss and EMI in synchronous rectifier applications.

Pinout & Package

P-TO263-3-2 (D²PAK) package with exposed drain pad for thermal and electrical connection; standard 3-pin layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Logic-level compatible; requires ≤10 V drive for full enhancement; gate resistance R_G = 0.9 Ω internal.
Pin 2 (Drain)	High-side or low-side power path	Exposed copper tab; electrically and thermally connected to drain-must be isolated from heatsink unless referenced to same potential.
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides return path for load current; used as ground reference for gate driver ICs in low-side configuration.

Key Features

Feature	Design Value
OptiMOS®2 trench technology	Delivers industry-leading R_DS(on) × Q_g FOM for reduced total power loss in high-frequency SMPS.
Logic-level gate drive	Threshold voltage range 1.2–2.0 V enables direct interface with 3.3 V microcontrollers and PWM controllers without level-shifting.
Enhanced dv/dt ruggedness	Rated 6 kV/µs ensures stable operation in noisy motor drive or inverter circuits where voltage transients exceed 1 kV/µs.
Integrated robust body diode	Q_rr = 10 nC and soft recovery reduce ringing and EMI in synchronous rectification, eliminating need for external Schottky.
175 °C operation with low R_thJC	Enables derating-free 30 A continuous current in industrial power supplies with ambient up to 85 °C and forced-air cooling.

Applications

Server VRM

Automotive DC/DC Converter

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers with strict efficiency and thermal constraints.

IC Role / Device Role / Timing Role: Synchronous high-side FET in multiphase buck converter operating at 500 kHz–1 MHz.

Use Value: 13.6 mΩ R_DS(on) and 9.3 nC Q_g minimize combined conduction and switching loss, improving full-load efficiency by ≥0.8% vs. legacy MOSFETs.

Use Scenario: 12 V-to-5 V/3.3 V conversion for ADAS camera modules and infotainment ECUs in vehicles with wide ambient temperature range.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in isolated flyback or non-isolated buck converter.

Use Value: 175 °C rating and 6 kV/µs dv/dt immunity ensure reliability during cold-crank and load-dump events without gate oscillation.

Industrial PLC Power Supply

USB-C PD Fast Charger

Use Scenario: Primary-side switch in 24 V input industrial SMPS powering programmable logic controllers with high reliability demand.

IC Role / Device Role / Timing Role: High-frequency switching transistor in active-clamp forward or LLC resonant topology.

Use Value: Avalanche energy rating (E_AS = 60 mJ) provides built-in protection against inductive kickback during fault conditions.

Use Scenario: Secondary-side synchronous rectifier in 65 W USB-C PD charger with GaN primary-side switching.

IC Role / Device Role / Timing Role: Low-voltage, high-current rectifier driven by dedicated SR controller with adaptive timing.

Use Value: Q_rr = 10 nC and V_SD = 0.97 V reduce reverse recovery loss and forward conduction loss, enabling >94% peak efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP14N03LA	P-TO220-3-1 package; higher R_thJC = 3.8 K/W; identical electrical specs.	Requires larger heatsink area due to lower thermal conductivity; not surface-mountable.	Select when through-hole assembly or cost-sensitive prototyping is required.
IPI14N03LA	P-TO262-3-1 package; R_thJC = 3.5 K/W; same die and R_DS(on)/Q_g performance.	Intermediate thermal performance; suitable for medium-volume industrial PCBs with mixed mounting.	Choose for automated through-hole reflow compatibility and improved thermal margin over TO-220.

Compared with IPP14N03LA and IPI14N03LA, IPB14N03LA offers the lowest thermal resistance (3.2 K/W) and surface-mount compatibility-making it optimal for space-constrained, high-power-density DC/DC converters where board area and thermal management are critical.

Availability

IPB14N03LA is available at Aetrix Electronics and suitable for server VRMs, automotive DC/DC converters, industrial PLC power supplies, and USB-C PD fast chargers requiring stable component supply and long-term lifecycle support.

Supply support for IPB14N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The OptiMOS®2 product line delivers high-performance, logic-level N-channel MOSFETs optimized for high-frequency switching power supplies-targeting efficiency, thermal density, and system-level reliability in computing, automotive, and industrial applications.

FAQ

What is the maximum continuous drain current for IPB14N03LA at 100 °C case temperature?

The maximum continuous drain current remains 30 A at T_C = 100 °C per datasheet absolute maximum ratings. This reflects bondwire-limited current handling-not thermal limitation-and is validated across the full operating temperature range up to 175 °C junction temperature.

Does IPB14N03LA require a gate resistor for stability in high-speed switching?

A gate resistor of 2.7 Ω is used in the datasheet's switching time test conditions (t_r, t_f, t_d(on)). While not mandatory, a 1–5 Ω series resistor is recommended to dampen gate ringing and prevent spurious turn-on caused by high di/dt coupling, especially in half-bridge layouts.

Can IPB14N03LA be used in linear mode (as a pass element)?

No-it is not characterized or rated for linear (saturation) operation. The Safe Operating Area (SOA) graph shows only single-pulse capability below 10 ms, and no DC SOA curve is provided. Use only in switched-mode applications with adequate voltage/current derating.

Is the body diode of IPB14N03LA suitable for reverse recovery in synchronous rectification?

Yes-the body diode is specifically optimized for synchronous rectification with Q_rr = 10 nC and soft recovery behavior. It is characterized at 400 A/µs di/dt and supports efficient operation in buck and flyback topologies without external diode replacement.

IPB14N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1043 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 46W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB14N03LA FAQ

1.How can I place an order for IPB14N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB14N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB14N03LA reliable?

The price and inventory of IPB14N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB14N03LA is usually 5 days.

3.What payment methods are accepted for IPB14N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB14N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB14N03LA?

IPB14N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB14N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB14N03LA?

For technical support, including IPB14N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB14N03LA requirements.

6.How does Aetrix verify that IPB14N03LA is sourced from the original manufacturer or authorized distributors?

All IPB14N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB14N03LA meets industry standards.

7.What is the process for return or replacement of IPB14N03LA?

All IPB14N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPB14N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB14N03LA part is unused and in its original packaging.

Return procedure for IPB14N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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