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Infineon Technologies IPB14N03LA G

Part No.:
IPB14N03LA G
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIPB14N03LA G.pdf
Description:
MOSFET N-CH 25V 30A TO263-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,390

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Product details

Overview

IPB14N03LA G from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3-2 package, rated for 25 V VDS, 30 A continuous drain current at TC = 25 °C, and 13.6 mΩ RDS(on) (max) at VGS = 10 V - optimized for high-frequency DC/DC converters in server VRMs and POL modules.

For engineers reviewing the IPB14N03LA G datasheet, IPB14N03LA G pinout, IPB14N03LA G application, or IPB14N03LA G equivalent, key selection criteria include its 3.2 K/W junction-to-case thermal resistance, dv/dt rating of 6 kV/µs, gate charge total of 6.3–8.3 nC, and 175 °C maximum operating temperature for robust industrial and computing power stages.

Technical Context

This MOSFET employs trench-based silicon technology with optimized cell pitch and reduced gate-drain charge (Qgd = 1.8–2.7 nC) to achieve low gate charge × RDS(on) figure-of-merit (FOM), enabling efficient switching in synchronous buck topologies above 300 kHz. Its logic-level gate threshold (VGS(th) = 1.2–2.0 V) ensures full enhancement with 3.3 V or 5 V gate drivers.

The device integrates a robust body diode with Qrr ≤ 10 nC and VSD ≤ 1.2 V at IF = 30 A, supporting high-efficiency synchronous rectification and hard-switched flyback designs. Thermal design is enabled by its low RthJC (3.2 K/W) and compatibility with standard FR4 PCBs featuring ≥6 cm² copper area on drain pad.

Key Specifications

ParameterValue and Actual Design Meaning
VDS25 V - supports 12 V input rails with margin for transient spikes in point-of-load converters
RDS(on) max13.6 mΩ at VGS = 10 V - enables <1 W conduction loss at 30 A in compact thermal layouts
Qg total6.3–8.3 nC - allows fast switching with low gate drive power in high-frequency operation
RthJC3.2 K/W - permits direct heatsink mounting for >40 W power dissipation without derating
Tj max175 °C - sustains reliable operation under sustained overload or ambient temperatures up to 125 °C
dv/dt rating6 kV/µs - prevents spurious turn-on in noisy high-di/dt environments like motor drives
ID pulsed210 A - handles short-circuit events in protection-enabled SMPS designs

Pinout & Package

IPB14N03LA G uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain tab for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control electrodeLogic-level compatible; requires ≤10 V drive for full enhancement; low Ciss (784–1043 pF) minimizes driver loading
Pin 2 (Drain)Main current path outputExposed copper tab - must be soldered to ≥6 cm² PCB copper pour for thermal management and low-inductance return path
Pin 3 (Source)Reference node for gate driveProvides Kelvin sense path for accurate gate voltage control; ties to power ground in synchronous buck high-side configuration

Key Features

FeatureDesign Value
Optimized FOM (Qg × RDS(on))Enables >95% efficiency in 500 kHz–1 MHz DC/DC converters with minimal gate drive loss
175 °C rated junction temperatureEliminates need for thermal derating in sealed enclosures or high-ambient industrial systems
dv/dt ruggednessWithstands 6 kV/µs without false triggering - critical for half-bridge and LLC resonant converter reliability
Low Qrr body diode10 nC reverse recovery charge reduces switching losses and EMI in synchronous rectifier applications
Pb-free & RoHS compliantMeets global environmental compliance requirements without performance trade-offs

Applications

Server Voltage Regulator ModulesIndustrial PLC Power Supplies

Use Scenario: High-current, multi-phase buck converters delivering 12 V → 1.2 V @ 100+ A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in interleaved phases, operating at 600–800 kHz.

Use Value: 13.6 mΩ RDS(on) and 3.2 K/W RthJC reduce conduction loss and enable compact heatsinkless layout.

Use Scenario: 24 V input isolated DC/DC converter powering I/O modules and fieldbus interfaces.

IC Role / Device Role / Timing Role: Primary-side active clamp switch in forward topology, handling repetitive 210 A pulse currents.

Use Value: 175 °C Tj,max and 6 kV/µs dv/dt rating ensure stable operation in electrically noisy factory environments.

Telecom Base Station POLAutomotive ADAS Camera Power

Use Scenario: Point-of-load regulator supplying 5 V/3 A to FPGA and transceiver ICs in remote radio units.

IC Role / Device Role / Timing Role: High-side switch in monolithic buck controller IC with integrated gate driver.

Use Value: Logic-level VGS(th) (1.2–2.0 V) ensures full turn-on using internal 5 V rail; low Qg minimizes driver stress.

Use Scenario: 12 V → 3.3 V buck converter powering image sensor and ISP in rear-view camera module.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in automotive-grade DC/DC with AEC-Q101 qualification.

Use Value: JEDEC-qualified reliability and -55 °C to 175 °C operation support extended temperature cycling in engine bay proximity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL3803PBFRDS(on) = 12 mΩ @ 10 V, but higher Qg (18 nC) and no dv/dt rating specifiedLacks documented dv/dt ruggedness and 175 °C rating - unsuitable for high-noise or high-temp environmentsPrefer IPB14N03LA G where switching speed, thermal headroom, or noise immunity are critical
STL100N3LLH6Same VDS (30 V), lower RDS(on) (9.5 mΩ), but Qgd = 4.2 nC - higher switching lossBetter conduction loss but inferior FOM; less suitable for >500 kHz operationChoose IPB14N03LA G when optimizing for combined conduction + switching loss in high-frequency designs

Compared with IRL3803PBF and STL100N3LLH6, IPB14N03LA G delivers superior dv/dt immunity, tighter thermal resistance control, and balanced FOM - making it optimal for high-reliability, high-frequency DC/DC where gate drive efficiency and ruggedness are prioritized over absolute lowest RDS(on).

Availability

IPB14N03LA G is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, and telecom POL converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPB14N03LA G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS®2 product line targets high-efficiency, high-frequency power conversion with optimized silicon process and packaging for server, telecom, and industrial SMPS applications.

FAQ

Is IPB14N03LA G qualified for automotive applications?

No - while it operates up to 175 °C and meets JEDEC standards for target applications, IPB14N03LA G is not AEC-Q101 qualified. It is intended for industrial, computing, and telecom power systems. For automotive use, consider Infineon's AEC-Q101-qualified OptiMOS™ 5 or 6 series variants with identical voltage/current ratings.

What is the recommended PCB layout for thermal performance?

Mount the device on a vertical FR4 PCB with ≥6 cm² (40 mm × 40 mm) single-layer 70 µm copper area connected to the drain tab. Use multiple thermal vias under the tab to inner ground planes. Keep gate traces short and low-inductance; separate power and signal grounds to minimize noise coupling into the gate loop.

Does IPB14N03LA G support synchronous rectification in flyback converters?

Yes - its low Qrr (≤10 nC) and VSD ≤ 1.2 V at 30 A make it suitable for secondary-side synchronous rectification in discontinuous conduction mode (DCM) flyback converters up to 150 kHz. Ensure gate drive timing avoids shoot-through during diode conduction phase.

Can IPB14N03LA G replace older OptiMOS®1 devices in existing designs?

Yes - it is a direct drop-in replacement for IPB12N03LA G and similar OptiMOS®1 parts in PG-TO263-3-2 package, offering improved RDS(on), lower Qg, and enhanced dv/dt rating. No layout changes are required, but verify gate drive strength due to slightly higher Ciss (784–1043 pF vs. ~650 pF).

IPB14N03LA G Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
13.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:
8.3 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1043 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
46W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

IPB14N03LA G FAQ

1.How can I place an order for IPB14N03LA G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB14N03LA G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB14N03LA G reliable?

The price and inventory of IPB14N03LA G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB14N03LA G is usually 5 days.

3.What payment methods are accepted for IPB14N03LA G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB14N03LA G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB14N03LA G?

IPB14N03LA G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB14N03LA G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB14N03LA G?

For technical support, including IPB14N03LA G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB14N03LA G requirements.

6.How does Aetrix verify that IPB14N03LA G is sourced from the original manufacturer or authorized distributors?

All IPB14N03LA G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB14N03LA G meets industry standards.

7.What is the process for return or replacement of IPB14N03LA G?

All IPB14N03LA G units undergo pre-shipment inspection (PSI). If there is an issue with IPB14N03LA G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB14N03LA G part is unused and in its original packaging.

Return procedure for IPB14N03LA G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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