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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB160N04S203ATMA1

Name: IPB160N04S203ATMA1
Brand: Infineon Technologies
SKU: IPB160N04S203ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB160N04S203ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB160N04S203ATMA1.pdf

Description:: MOSFET N-CH 40V 160A TO263-7

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Product details

Overview

IPB160N04S203ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-7-3 package, rated for 40 V V_DS, 2.9 mΩ R_DS(on) max at V_GS = 10 V and I_D = 60 A, 160 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature. It serves as a high-current synchronous rectifier or main switch in automotive DC-DC converters and battery disconnect circuits.

For engineers reviewing the IPB160N04S203ATMA1 datasheet, IPB160N04S203ATMA1 pinout, IPB160N04S203ATMA1 application, or IPB160N04S203ATMA1 equivalent, key selection criteria include ultra-low R_DS(on), 100% avalanche energy rating (810 mJ), AEC-Q101 qualification, thermal resistance R_thJC = 0.5 K/W, and integrated reverse diode with 0.84 V forward voltage at 80 A.

Technical Context

This OptiMOS®-T device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 5.2 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The MOSFET integrates a co-packaged Schottky-like body diode with 160 A continuous forward current capability and 0.84 V typical V_SD at 80 A, enabling efficient freewheeling in synchronous buck topologies without external diode addition. Dynamic parameters-including 5300 pF C_iss, 580 pF C_rss, and 123–170 nC Q_g-are specified under standardized 20 V V_DD, 10 V V_GS, and 2.2 Ω gate resistor conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails and transient overvoltage tolerance up to 35 V.
R_DS(on) max	2.9 mΩ at V_GS = 10 V, I_D = 60 A - Enables <1.5 W conduction loss at 160 A in parallel configurations with proper thermal management.
I_D continuous	160 A at T_C = 25 °C - Supports high-current motor drives and starter solenoid control without external current sharing.
E_AS	810 mJ at I_D = 80 A - Confirmed single-pulse avalanche ruggedness for inductive load switching in transmission control units.
R_thJC	0.5 K/W - Allows direct mounting to heatsink with minimal thermal interface resistance for high-power density designs.
Q_g	123–170 nC - Determines gate driver power requirement and switching loss trade-off in 100–500 kHz DC-DC applications.
V_GS(th)	2.1–4.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers and immunity to noise-induced false triggering.

Pinout & Package

IPB160N04S203ATMA1 is housed in PG-TO263-7-3 (D²PAK-7) package: surface-mount, 7-terminal, exposed drain pad for thermal and electrical connection, lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (low-side reference)	Common return path for load current; electrically tied to PCB ground plane via multiple vias.
2 (Gate)	Control input	High-impedance MOSFET gate requiring low-inductance routing and local 10 nF bypass capacitor.
3 (Source)	Source terminal (redundant)	Second source bond for reduced source inductance and improved current sharing in paralleled operation.
4 (Drain)	Power output / high-side connection	Exposed copper pad on underside; must be soldered to ≥6 cm² copper area for thermal performance.
5 (Source)	Source terminal (redundant)	Third source connection to minimize common-source inductance in high-di/dt switching.
6 (Gate)	Control input (dual gate)	Second gate pin for Kelvin sensing or gate loop decoupling in high-precision gate drive layouts.
7 (Source)	Source terminal (redundant)	Fourth source pin to support symmetric layout and reduce parasitic inductance in multi-phase inverters.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications including engine control modules and EPS systems.
100% avalanche tested	Each unit undergoes single-pulse E_AS stress test at 810 mJ, ensuring field reliability under inductive fault conditions.
Ultra-low R_DS(on)	2.4 mΩ typical value reduces conduction losses by >30% vs. prior-generation 40 V MOSFETs at 100 A load.
MSL1 rating	Rated for peak reflow temperatures up to 260 °C, supporting lead-free assembly without moisture sensitivity concerns.
Integrated body diode	160 A continuous forward current and 0.84 V V_SD enable use in synchronous rectification without discrete diode replacement.

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS)

Use Scenario: 12 V to 5 V/3.3 V step-down conversion for ADAS camera and radar modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 300–500 kHz with zero-voltage switching assist.

Use Value: 2.9 mΩ R_DS(on) limits conduction loss to <0.5 W at 80 A, enabling compact heatsinkless design in confined ECU enclosures.

Use Scenario: Motor phase switching in 12 V brushless EPS actuator with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current up to 160 A during torque assist and energy recovery.

Use Value: 175 °C T_j rating and 0.5 K/W R_thJC allow sustained 120 A operation under hood ambient of 105 °C.

Battery Disconnect Unit (BDU)

Start-Stop System Control

Use Scenario: Main contactor replacement in 48 V mild-hybrid battery management systems.

IC Role / Device Role / Timing Role: Solid-state high-current switch controlling battery isolation during fault events or sleep mode.

Use Value: 810 mJ E_AS withstands inrush currents and short-circuit transients without destructive failure during hot-plug events.

Use Scenario: Starter motor engagement/disengagement in 12 V start-stop systems with frequent cycling.

IC Role / Device Role / Timing Role: High-current main switch driving solenoid coil or directly controlling starter relay contacts.

Use Value: AEC-Q101 qualification and MSL1 reflow compatibility ensure long-term reliability across 100,000+ cold-start cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	R_DS(on) = 2.5 mΩ typ., Q_g = 145 nC, no dual-gate configuration	Lacks Kelvin gate pin; higher gate charge increases driver complexity in high-frequency designs	Preferred where board space is constrained and gate drive simplicity outweighs minor R_DS(on) advantage
IRF1407PBF	R_DS(on) = 4.0 mΩ min., TO-220 package, non-AEC-Q101	Higher thermal resistance (R_thJC = 1.0 K/W) and no automotive qualification limit use to industrial power supplies	Suitable for cost-sensitive non-automotive 12 V systems where 175 °C operation is not required

Compared with STL220N4LF8AG and IRF1407PBF, IPB160N04S203ATMA1 delivers superior thermal performance (0.5 K/W vs. ≥0.8 K/W), AEC-Q101 compliance, and dual-gate layout for precise gate control-making it the only choice for safety-critical automotive power stages requiring both ruggedness and high-frequency efficiency.

Availability

IPB160N04S203ATMA1 is available at Aetrix Electronics and suitable for automotive battery management, electric power steering, and start-stop system designs requiring stable component supply, long lifecycle assurance, and full traceability.

Supply support for IPB160N04S203ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This part belongs to the OptiMOS®-T product line, engineered specifically for high-current, high-efficiency switching in 12 V and 24 V automotive power systems where low R_DS(on), avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB160N04S203ATMA1?

The absolute maximum gate-source voltage is ±20 V, per the datasheet's "Maximum ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10–15 V for optimal R_DS(on) and safe margin against overshoot.

Does IPB160N04S203ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For 100–300 kHz operation with a 2 A peak gate driver, a 2.2 Ω resistor is validated in the datasheet (page 3, dynamic test conditions). Lower values increase switching speed but risk ringing; higher values reduce EMI at the cost of increased switching loss.

Can IPB160N04S203ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see page 6, Fig. 9) ensures inherent current sharing. Layout must balance source inductance using all four source pins and symmetric PCB traces. Thermal coupling via shared heatsink is essential to maintain uniform junction temperature across paralleled devices.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the integrated diode supports 160 A continuous forward current at T_C = 25 °C and has a typical V_SD of 0.84 V at 80 A and 25 °C. Its soft recovery characteristic (low Q_rr) minimizes voltage spikes, making it suitable for synchronous buck converters without external diode supplementation.

IPB160N04S203ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB160N04S203ATMA1 FAQ

1.How can I place an order for IPB160N04S203ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB160N04S203ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB160N04S203ATMA1 reliable?

The price and inventory of IPB160N04S203ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB160N04S203ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB160N04S203ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB160N04S203ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB160N04S203ATMA1?

IPB160N04S203ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB160N04S203ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB160N04S203ATMA1?

For technical support, including IPB160N04S203ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB160N04S203ATMA1 requirements.

6.How does Aetrix verify that IPB160N04S203ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB160N04S203ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB160N04S203ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB160N04S203ATMA1?

All IPB160N04S203ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB160N04S203ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB160N04S203ATMA1 part is unused and in its original packaging.

Return procedure for IPB160N04S203ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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