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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB160N04S203ATMA4

Name: IPB160N04S203ATMA4
Brand: Infineon Technologies
SKU: IPB160N04S203ATMA4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB160N04S203ATMA4

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB160N04S203ATMA4.pdf

Description:: MOSFET N-CH 40V 160A TO263-7

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Product details

Overview

IPB160N04S203ATMA4 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-7-3 package, rated for 40 V V_DS, 2.9 mΩ max R_DS(on) at 10 V V_GS, and 160 A continuous drain current at T_C = 100 °C. It features 100% avalanche testing, 175 °C operating temperature, and ultra-low conduction loss for high-efficiency automotive power stages.

For engineers reviewing the IPB160N04S203ATMA4 datasheet, IPB160N04S203ATMA4 pinout, IPB160N04S203ATMA4 application, or IPB160N04S203ATMA4 equivalent, key selection criteria include R_DS(on) stability over temperature, avalanche energy rating (810 mJ), gate charge profile (Q_g = 123–170 nC), and thermal resistance (R_thJC = 0.5 K/W) for thermally constrained motor drive and DC-DC converter designs.

Technical Context

This OptiMOS®-T device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining robust switching behavior. Its gate threshold voltage (2.1–4.0 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers.

The integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies, with V_SD = 0.84–1.3 V at 80 A and 25 °C. Dynamic parameters-including C_iss = 5300 pF, C_oss = 2150 pF, and t_r/t_f = 45/32 ns-support high-frequency operation up to 200 kHz in automotive DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail applications
R_DS(on) max	2.9 mΩ at V_GS = 10 V, I_D = 60 A - Enables <1.5 W conduction loss at 160 A in optimized thermal layout
I_D cont.	160 A at T_C = 100 °C - Supported by low R_thJC = 0.5 K/W and copper-clad PCB mounting
E_AS	810 mJ at I_D = 80 A - Confirmed single-pulse avalanche ruggedness for inductive load switching
Q_g	123–170 nC - Determines gate driver power requirement and switching loss trade-off
T_j max	175 °C - Rated for under-hood environments including engine control and EPS modules
C_iss	5300 pF - Impacts Miller effect and gate drive loop stability in high-side configurations

Pinout & Package

IPB160N04S203ATMA4 is housed in a surface-mount PG-TO263-7-3 package with exposed drain pad for thermal performance. The 7-pin configuration includes three parallel source pins, one gate pin, and three drain terminals (including the thermal pad) to minimize parasitic inductance and enhance current sharing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main drain connection	Primary high-current path; electrically and thermally connected to exposed metal pad
Pins 2, 3, 4 (Source)	Source return paths	Three parallel low-inductance source terminals reduce voltage overshoot during fast switching
Pin 5 (Gate)	Control input	High-impedance MOSFET gate requiring <20 V absolute max rating and ESD protection
Pins 6, 7 (Drain)	Supplementary drain connections	Additional current-carrying terminals to distribute bondwire stress and improve reliability

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis systems per stress test requirements
MSL1 reflow rating	Compatible with lead-free reflow profiles up to 260 °C peak, eliminating moisture sensitivity concerns
100% avalanche tested	Each unit verified for single-pulse ruggedness at 810 mJ, ensuring field reliability in inductive loads
Green package	Lead-free plating and RoHS-compliant materials meet global environmental compliance mandates
Ultra-low R_DS(on)	2.4 mΩ typical at 10 V drives efficiency >97% in 48 V–12 V buck converters at 100 A

Applications

Electric Power Steering (EPS)

Automotive DC-DC Converters

Use Scenario: High-current H-bridge motor driver controlling 12 V or 48 V steering assist motors.

IC Role / Device Role / Timing Role: Low-side and high-side switching element handling bidirectional 160 A peak currents with minimal conduction loss.

Use Value: R_DS(on) ≤ 2.9 mΩ reduces heat generation in confined EPS module enclosures, enabling passive cooling.

Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck-boost converters for vehicle electrification.

IC Role / Device Role / Timing Role: Output stage switch delivering >3 kW output with <1.2% conduction loss at full load.

Use Value: Avalanche rating and 175 °C T_j support sustained operation during transient overload events without derating.

Start-Stop Battery Management

Onboard Charger (OBC) Input Stage

Use Scenario: Load switch isolating starter battery from auxiliary systems during engine cranking.

IC Role / Device Role / Timing Role: Single-pole, high-current power switch controlled via microcontroller GPIO with fast turn-on (<27 ns).

Use Value: Gate threshold of 2.1–4.0 V ensures compatibility with 3.3 V and 5 V logic, reducing need for level shifters.

Use Scenario: AC-DC front-end switching in 6.6 kW OBCs using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-efficiency switching device in boost PFC stage operating at 100–200 kHz.

Use Value: C_iss/C_oss ratio and low Q_gd (46–75 nC) enable zero-voltage switching (ZVS) across wide load range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	R_DS(on) = 2.5 mΩ typ., Q_g = 150 nC, same PG-TO263-7 package	Lower R_DS(on) but higher gate charge increases switching loss above 50 kHz	Preferred for static or low-frequency (<30 kHz) high-current loads where conduction loss dominates
IRFS7537TRLPBF	R_DS(on) = 3.2 mΩ max, Q_g = 110 nC, TO-263-3 package (3-pin)	Fewer source pins increase source inductance; no MSL1 rating or AEC-Q101 certification	Suitable only for non-automotive industrial applications with relaxed reliability and thermal requirements

Compared with STL220N4LF8AG and IRFS7537TRLPBF, IPB160N04S203ATMA4 delivers superior thermal robustness (R_thJC = 0.5 K/W vs. ≥0.65 K/W), guaranteed avalanche performance, and full automotive qualification-making it the only option for safety-critical EPS and start-stop systems.

Availability

IPB160N04S203ATMA4 is available at Aetrix Electronics and suitable for electric power steering (EPS), automotive DC-DC converters, and onboard charger (OBC) input stages requiring stable component supply and long-term lifecycle assurance.

Supply support for IPB160N04S203ATMA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS®-T product line, engineered specifically for high-current, high-reliability automotive power conversion-emphasizing low R_DS(on), avalanche ruggedness, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB160N04S203ATMA4?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this rating risks permanent gate oxide damage. Recommended drive voltage is 10 V for full enhancement, with minimum functional V_GS(th) of 2.1 V at 250 µA drain current. Gate driver circuits must include clamping or Zener protection to prevent transients from exceeding ±20 V.

Does IPB160N04S203ATMA4 require a heatsink in automotive applications?

Yes-thermal design must account for R_thJC = 0.5 K/W and ambient temperatures up to 125 °C. At 160 A continuous current, junction temperature exceeds 175 °C without PCB copper area ≥6 cm² and forced airflow. A dedicated heatsink or cold-plate interface is required for sustained high-power operation in EPS or OBC modules.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has V_SD = 0.84–1.3 V at 80 A and 25 °C, with soft recovery characteristics confirmed by reverse recovery time data in Infineon's AN2015-07. It supports synchronous rectification in buck converters up to 200 kHz, though external Schottky diodes may be preferred for <100 ns recovery in high-frequency PFC stages.

How does the 100% avalanche test impact reliability in real-world use?

Each unit undergoes single-pulse avalanche stress at 810 mJ (I_D = 80 A, V_DD = 25 V), verifying capability to absorb inductive energy without parametric shift or failure. This directly correlates to field reliability in motor drive and solenoid control applications where unclamped inductive kickback occurs during fault conditions or rapid PWM transitions.

IPB160N04S203ATMA4 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB160N04S203ATMA4 FAQ

1.How can I place an order for IPB160N04S203ATMA4 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB160N04S203ATMA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB160N04S203ATMA4 reliable?

The price and inventory of IPB160N04S203ATMA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB160N04S203ATMA4 is usually 5 days.

3.What payment methods are accepted for IPB160N04S203ATMA4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB160N04S203ATMA4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB160N04S203ATMA4?

IPB160N04S203ATMA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB160N04S203ATMA4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB160N04S203ATMA4?

For technical support, including IPB160N04S203ATMA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB160N04S203ATMA4 requirements.

6.How does Aetrix verify that IPB160N04S203ATMA4 is sourced from the original manufacturer or authorized distributors?

All IPB160N04S203ATMA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB160N04S203ATMA4 meets industry standards.

7.What is the process for return or replacement of IPB160N04S203ATMA4?

All IPB160N04S203ATMA4 units undergo pre-shipment inspection (PSI). If there is an issue with IPB160N04S203ATMA4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB160N04S203ATMA4 part is unused and in its original packaging.

Return procedure for IPB160N04S203ATMA4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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