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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB160N04S3H2ATMA1

Name: IPB160N04S3H2ATMA1
Brand: Infineon Technologies
SKU: IPB160N04S3H2ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB160N04S3H2ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB160N04S3H2ATMA1.pdf

Description:: MOSFET N-CH 40V 160A TO263-7

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Product details

Overview

IPB160N04S3H2ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified power MOSFET in PG-TO263-7-3 package, rated for 40 V V_DS, 2.1 mΩ R_DS(on) at 10 V V_GS, and 160 A continuous drain current at T_C = 25 °C. It operates up to 175 °C, is 100% avalanche tested, and targets high-current DC-DC converters and motor control in EV traction inverters.

For engineers reviewing the IPB160N04S3H2ATMA1 datasheet, IPB160N04S3H2ATMA1 pinout, IPB160N04S3H2ATMA1 application, or IPB160N04S3H2ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, single-pulse avalanche energy (898 mJ), gate charge profile (Q_g = 110–145 nC), and AEC-Q101 qualification for under-hood use.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in high-frequency synchronous rectification. Its 0.7 K/W R_thJC enables efficient thermal coupling to heatsinks, and its 310–465 pF Crss supports controlled dV/dt during hard-switching.

The integrated body diode delivers 160 A continuous forward current with V_SD = 0.85–1.3 V at 80 A and t_rr = 60 ns, enabling bidirectional energy recovery in H-bridge topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/48 V automotive battery systems
R_DS(on)	1.6–2.1 mΩ @ 10 V V_GS, 80 A - Enables <1 W conduction loss at 100 A in compact PCB layouts
I_D (cont.)	160 A @ T_C = 25 °C - Supports high-current phase legs in 3-phase motor drives
E_AS	898 mJ @ I_D = 80 A - Withstands repetitive inductive turn-off surges in solenoid and relay drivers
Q_g	110–145 nC - Determines gate driver power requirement and switching loss trade-off at 100 kHz+
t_r/t_f	16 ns / 17 ns - Enables fast transition between on/off states with minimal overlap loss
T_j max	175 °C - Rated for under-hood environments including engine bay DC-DC modules

Pinout & Package

Package: PG-TO263-7-3 (D²PAK-7) with exposed drain pad for thermal performance. 7-terminal surface-mount package with 3 drain pins, 1 source, 1 gate, 1 Kelvin source, and 1 sense terminal for accurate current monitoring.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (Drain)	Main current path collector	Parallel drain connections reduce package inductance and improve current sharing in paralleled configurations
4 (Source)	Power return reference	Primary source connection for load current return; used with gate driver ground reference
5 (Gate)	Control input	Standard gate drive node; requires 10 V for full enhancement and low R_DS(on)
6 (Kelvin Source)	Sense reference	Isolated source path for gate driver feedback, eliminating IR drop error in high-side sensing
7 (Sense)	Current monitor output	Provides proportional analog signal for real-time overcurrent protection without shunt resistor

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain applications including EPS, HVAC blowers, and 48 V mild-hybrid DC-DC stages
100% unclamped inductive avalanche tested	Guarantees robustness against voltage spikes during inductive load switching without derating
Ultra-low R_DS(on) with Kelvin source	Enables precise gate control and stable on-resistance across temperature and current range
MSL1 rating (260 °C peak reflow)	Supports standard lead-free SMT assembly without solder joint reliability risk
Integrated body diode with 60 ns t_rr	Reduces need for external anti-parallel diodes in half-bridge and synchronous buck designs

Applications

Automotive Traction Inverter Phase Leg

48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-current switching in 3-phase inverter stage driving PMSM motors in electric power steering and auxiliary drives.

IC Role / Device Role / Timing Role: Main power switch in high-side/low-side leg; handles bidirectional current with fast turn-on/turn-off timing.

Use Value: 2.1 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 3.5 mΩ devices at 120 A, improving system efficiency at 10–20 kHz PWM.

Use Scenario: Primary-side synchronous rectifier in isolated bi-directional DC-DC converter linking 12 V and 48 V domains.

IC Role / Device Role / Timing Role: High-side switch with Kelvin source for accurate current sensing during boost mode operation.

Use Value: 898 mJ E_AS withstands transient overvoltage during 48 V bus short-circuit events, eliminating need for snubbers.

Industrial Motor Drive Half-Bridge

EV Onboard Charger (OBC) LLC Resonant Switch

Use Scenario: 3 kW servo drive output stage operating at 100 °C ambient with forced air cooling.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting reverse current during dead-time intervals.

Use Value: 60 ns t_rr minimizes reverse recovery loss and EMI generation, enabling clean zero-voltage switching transitions.

Use Scenario: High-frequency resonant switch in 6.6 kW OBC primary side, switching at 250–500 kHz.

IC Role / Device Role / Timing Role: Fast-switching power transistor with low Crss to maintain ZVS across wide load range.

Use Value: 310–465 pF Crss ensures predictable gate drive timing and reduced Miller-induced shoot-through risk at 300 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N04S4H2ATMA1	R_DS(on) = 1.4 mΩ (typ), Q_g = 155 nC - lower on-resistance but higher gate charge	Better conduction loss at <80 A; less suitable for >200 kHz switching due to higher Q_g	Select when thermal budget dominates over switching loss, e.g., low-speed high-current inverters
IRFS7530TRLPBF	R_DS(on) = 2.2 mΩ, no Kelvin source, AEC-Q101 not certified - wider V_GS(th) (2.0–4.0 V)	Limited to non-automotive industrial drives; lacks sense capability for closed-loop current control	Choose only for cost-sensitive non-automotive applications where Kelvin sensing is unnecessary

Compared with IPB180N04S4H2ATMA1 and IRFS7530TRLPBF, IPB160N04S3H2ATMA1 offers optimal balance of low R_DS(on), moderate Q_g, Kelvin-source accuracy, and AEC-Q101 compliance-making it preferred for automotive-grade high-efficiency, high-reliability power stages.

Availability

IPB160N04S3H2ATMA1 is available at Aetrix Electronics and suitable for automotive traction inverters, 48 V mild-hybrid DC-DC converters, and industrial motor drives requiring stable component supply and long-term lifecycle support.

Supply support for IPB160N04S3H2ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T product line, engineered specifically for high-current, high-temperature automotive power conversion applications demanding low R_DS(on), robust avalanche capability, and AEC-Q101 reliability.

FAQ

What is the maximum junction temperature and how does it affect safe operating area?

The absolute maximum junction temperature is +175 °C. At this temperature, R_DS(on) increases by ~75% versus 25 °C, reducing current handling capability. The SOA curve on page 4 of the datasheet defines safe voltage-current combinations for pulsed operation, with thermal limits tightening above 100 °C ambient.

Does the Kelvin source pin require external connection, and what happens if left unconnected?

Yes-the Kelvin source must be connected directly to the gate driver's source reference to eliminate IR drop error in gate control. If left unconnected, gate threshold shifts unpredictably, causing increased R_DS(on), thermal runaway risk, and potential device failure under high-current conditions.

How is avalanche energy measured, and is it guaranteed per unit?

E_AS = 898 mJ is measured using standardized unclamped inductive switching (UIS) test at I_D = 80 A, V_DD = 40 V, and T_j = 25 °C. Every unit undergoes 100% UIS screening per Infineon's quality protocol, ensuring minimum energy rating without statistical derating.

Can this MOSFET be paralleled, and what layout considerations are critical?

Yes-its low R_DS(on) temperature coefficient (+0.6%/°C) enables stable current sharing. Critical layout requirements include symmetrical gate drive paths, identical source inductance per device, shared large-area copper for drain thermal coupling, and Kelvin source routing separate from power source traces to avoid noise coupling.

IPB160N04S3H2ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB160N04S3H2ATMA1 FAQ

1.How can I place an order for IPB160N04S3H2ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB160N04S3H2ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB160N04S3H2ATMA1 reliable?

The price and inventory of IPB160N04S3H2ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB160N04S3H2ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB160N04S3H2ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB160N04S3H2ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB160N04S3H2ATMA1?

IPB160N04S3H2ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB160N04S3H2ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB160N04S3H2ATMA1?

For technical support, including IPB160N04S3H2ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB160N04S3H2ATMA1 requirements.

6.How does Aetrix verify that IPB160N04S3H2ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB160N04S3H2ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB160N04S3H2ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB160N04S3H2ATMA1?

All IPB160N04S3H2ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB160N04S3H2ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB160N04S3H2ATMA1 part is unused and in its original packaging.

Return procedure for IPB160N04S3H2ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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