Infineon Technologies IPB160N08S403ATMA1

Overview

IPB160N08S403ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-7-3 package, rated for 80 V V_DS, 3.2 mΩ R_DS(on) max at 10 V V_GS, and 160 A continuous drain current at T_C = 25°C. It delivers high-current switching in automotive DC-DC converters, motor control inverters, and on-board chargers with 175°C junction operation and 100% avalanche tested ruggedness.

For engineers reviewing the IPB160N08S403ATMA1 datasheet, IPB160N08S403ATMA1 pinout, IPB160N08S403ATMA1 application, or IPB160N08S403ATMA1 equivalent, key selection criteria include its 0.72 K/W R_thJC, 86–112 nC total gate charge, 120 A diode pulse capability, and MSL1 reflow compatibility - all critical for thermal design, drive circuit sizing, and automotive production reliability validation.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in hard-switched 12 V/24 V/48 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive, while the integrated body diode supports synchronous rectification and freewheeling with 0.9–1.3 V V_SD at 100 A.

The MOSFET operates up to 175°C junction temperature and withstands single-pulse avalanche energy of 350 mJ at I_D = 80 A. Dynamic parameters - including 5961–7750 pF C_iss, 120–239 pF C_rss, and 18 ns t_d(on) - are characterized under standardized conditions (V_DD = 40 V, R_G = 3.5 Ω) for accurate gate driver sizing.

Key Specifications

Pinout & Package

Package: PG-TO263-7-3 (D²PAK-7), surface-mount, thermally enhanced with exposed drain pad and 7-pin configuration. Pin 1–3: Source; Pin 4: Gate; Pin 5–7: Drain (parallel internal connection).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N8F7AG and IXTH160N075L2, IPB160N08S403ATMA1 uniquely combines AEC-Q101 certification, 80 V rating, and 0.72 K/W thermal resistance in a surface-mount D²PAK-7 package - making it the only option qualified for safety-relevant 48 V automotive power stages requiring both ruggedness and manufacturability.

Availability

IPB160N08S403ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering inverters, and on-board chargers requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB160N08S403ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 automotive power MOSFET product line, engineered specifically for high-current, high-reliability switching in 12 V–48 V vehicle electrical systems under extreme thermal and mechanical stress.

FAQ

What is the maximum allowable gate-source voltage for IPB160N08S403ATMA1?

The absolute maximum V_GS is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Operation beyond this risks irreversible gate oxide damage. For reliable long-term use, gate drive should be limited to +10 V to +15 V for turn-on and –5 V to 0 V for turn-off, aligning with the device's 5.3 V gate plateau voltage and 2.0–4.0 V threshold range.

Does IPB160N08S403ATMA1 require a negative gate voltage for turn-off in automotive applications?

No. The device turns off fully with 0 V gate drive due to its enhancement-mode structure and 2.0–4.0 V V_GS(th). However, applying –5 V enhances noise immunity in high-dv/dt environments like motor drives. Negative bias is optional, not required, and must stay within the ±20 V absolute maximum rating.

How is the 160 A continuous drain current validated given the 0.72 K/W R_thJC?

The 160 A rating is measured at T_C = 25°C with sufficient heatsinking to maintain case temperature. With R_thJC = 0.72 K/W, the silicon junction reaches ~139°C at 160 A and 25°C case (P_tot ≈ 160² × 0.0032 ≈ 82 W → ΔT = 82 × 0.72 ≈ 59 K). This stays within the 175°C T_j(max) limit, confirming the rating is thermally sustainable under defined test conditions.

Can IPB160N08S403ATMA1 replace older OptiMOS™-T1 devices in existing designs?

Yes, with verification. It shares the same PG-TO263-7-3 footprint and pinout, and offers lower R_DS(on) (3.2 mΩ vs. ~4.5 mΩ for T1), reduced Q_g, and improved avalanche ruggedness. Layout changes are not needed, but gate drive strength and layout parasitics should be rechecked due to faster switching edges and higher di/dt capability.