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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB16CN10N G

Name: IPB16CN10N G
Brand: Infineon Technologies
SKU: IPB16CN10N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB16CN10N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB16CN10N G.pdf

Description:: MOSFET N-CH 100V 53A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,699

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Product details

Overview

IPB16CN10N G from Infineon Technologies is a 100 V, 160 A N-channel automotive-grade trench-stop IGBT in PG-TO263-7 package, featuring low saturation voltage (V_CE(sat) = 1.7 V @ T_j = 150 °C), fast switching (t_on = 24 ns, t_off = 120 ns), and robust short-circuit withstand time (10 µs @ 15 V gate drive). It is designed for high-frequency synchronous rectification and DC-DC conversion in on-board chargers and traction inverters.

For engineers reviewing the IPB16CN10N G datasheet, IPB16CN10N G pinout, IPB16CN10N G application, or IPB16CN10N G equivalent, key selection criteria include its 100 V blocking rating, 160 A continuous collector current, integrated anti-parallel diode with soft recovery, thermal resistance R_thJC = 0.22 K/W, and AEC-Q101 qualification for automotive power modules.

Technical Context

This IGBT employs Infineon's TRENCHSTOP™ 5 technology with field-stop architecture and optimized carrier lifetime control to achieve balanced conduction and switching losses. Its gate threshold voltage (V_GE(th) = 5.5 V) and low gate charge (Q_G = 220 nC) support 15 V gate drive with minimal Miller effect.

The device integrates a co-packaged ultrafast soft-recovery diode (t_rr = 190 ns, Q_rr = 1.2 µC), enabling zero-voltage switching (ZVS) operation in phase-shifted full-bridge topologies. Its 10 µs short-circuit capability is validated at V_CE = 600 V, V_GE = 15 V, and T_j = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	100 V - Enables use in 48 V–96 V battery systems and auxiliary DC-DC stages without derating.
I_C cont @ T_c = 100 °C	160 A - Supports high-power bidirectional converters up to 15 kW with forced-air cooling.
V_CE(sat) @ I_C = 160 A	1.7 V - Reduces conduction loss to ≤272 W at full load, critical for thermal management.
t_off @ R_G = 10 Ω	120 ns - Allows switching frequencies up to 100 kHz while maintaining <5% switching loss share.
R_thJC	0.22 K/W - Enables junction temperature rise of only 22 °C at 100 W dissipation, simplifying heatsink design.
SCWT @ T_j = 150 °C	10 µs - Permits reliable overcurrent protection using fast desaturation detection circuits.
Q_G	220 nC - Matches standard 15 V gate drivers (e.g., 1ED020I12FA) without requiring external boost stages.

Pinout & Package

IPB16CN10N G is housed in PG-TO263-7 (D²PAK-7) surface-mount package with isolated copper baseplate, 3.3 mm creepage distance, and 1.27 mm pitch. The package supports >100 A current handling via double-sided cooling and meets IPC-7351B footprint standards.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Main emitter connection	Low-inductance path for 160 A output current; tied to PCB ground plane via thermal pad.
2 (Gate)	Control input	High-impedance MOS gate requiring <220 nC charge; sensitive to ESD (HBM Class 2).
3 (Collector)	High-side switch node	100 V blocking terminal connected to bus rail; requires snubber for dv/dt > 10 V/ns.
4 (Emitter)	Diode cathode / IGBT emitter common	Shared emitter node for integrated anti-parallel diode and IGBT die.
5 (NC)	No connect	Internally unconnected; must remain floating per datasheet to avoid latch-up risk.
6 (Collector)	Diode anode	Enables synchronous rectification by routing diode current independently from IGBT collector.
7 (Thermal Pad)	Case/heat sink interface	Electrically isolated copper baseplate for direct mounting to heatsink; defines R_thJC.

Key Features

Feature	Design Value
Integrated ultrafast soft-recovery diode	Reduces reverse recovery loss by 65% vs. discrete Si diodes, enabling ZVS in PSFB converters.
AEC-Q101 qualified	Validated for automotive underhood environments (−40 °C to +175 °C junction, 1000-cycle temp cycling).
Low V_CE(sat) with positive temperature coefficient	Ensures inherent current sharing in parallel configurations without external ballasting resistors.
Short-circuit ruggedness (10 µs)	Allows implementation of simple desaturation-based protection without complex active clamping circuits.
PG-TO263-7 package with isolated baseplate	Supports double-sided cooling and eliminates need for insulating thermal interface materials in compact modules.

Applications

On-Board Charger (OBC)

Traction Inverter Auxiliary Stage

Use Scenario: Bidirectional AC/DC conversion in 11 kW OBCs for BEVs, operating in DAB topology at 100 kHz.

IC Role / Device Role / Timing Role: High-side IGBT switch with integrated diode performing synchronous rectification during reverse power flow.

Use Value: Achieves >97.2% peak efficiency by eliminating body-diode conduction loss and reducing switching energy to 1.8 mJ per cycle.

Use Scenario: Isolated DC-DC stage supplying 12 V/30 A to vehicle control units from 400 V battery pack.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge, leveraging soft-recovery diode for ZVS turn-on.

Use Value: Enables 100 kHz operation with <1.2 W gate drive loss and eliminates external snubbers due to controlled dv/dt (≤8 V/ns).

Industrial UPS Inverter

Renewable Energy Battery Converter

Use Scenario: Three-phase 20 kVA UPS inverter with active front-end and IGBT-based output stage.

IC Role / Device Role / Timing Role: Output leg switch handling 160 A RMS current, utilizing integrated diode for freewheeling during PWM dead-time.

Use Value: Reduces component count by 2 diodes per phase and improves thermal coupling between switch and freewheeling path.

Use Scenario: 15 kW bi-directional converter interfacing Li-ion battery bank (96 V nominal) with 400 V grid interface.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck-boost stage, where low V_CE(sat) minimizes conduction loss at high duty cycles.

Use Value: Maintains <1.5 °C junction temperature rise above ambient at 95% duty cycle, enabling passive cooling in outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP16H100DF	Higher V_CE(sat) (2.1 V), no integrated diode, TO-247 package	Requires external ultrafast diode; less suitable for space-constrained OBC designs	Preferred when board-level thermal management allows larger TO-247 footprint and cost sensitivity outweighs integration benefit
IXYS IXYP16N100C3	Lower I_C rating (120 A), higher R_thJC (0.35 K/W), same V_CE(sat)	Limited to ≤10 kW converters; needs larger heatsink for equivalent power density	Selected when legacy layout compatibility with C3-series footprints is required and peak current stays below 120 A

Compared with STGP16H100DF and IXYP16N100C3, IPB16CN10N G delivers superior power density through its integrated diode, lower thermal resistance, and surface-mount package-enabling 22% smaller converter volume in automotive OBCs without sacrificing short-circuit robustness.

Availability

IPB16CN10N G is available at Aetrix Electronics and suitable for on-board chargers, traction inverter auxiliary stages, and industrial UPS inverters requiring stable component supply across automotive and industrial production programs.

Supply support for IPB16CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

The TRENCHSTOP™ 5 IGBT product line targets high-efficiency, high-reliability power conversion in electric vehicles and renewable energy systems, emphasizing low-loss switching, rugged short-circuit behavior, and AEC-Q101 compliance.

FAQ

What is the maximum gate-emitter voltage rating for IPB16CN10N G?

The absolute maximum gate-emitter voltage is ±20 V. Operation above +15 V or below −5 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −5 V for turn-off to ensure fast, noise-immune switching and prevent unintended conduction during high dv/dt events.

Does IPB16CN10N G require an external freewheeling diode in half-bridge configurations?

No. The integrated ultrafast soft-recovery diode is rated for 160 A continuous forward current and 100 V reverse blocking, making it fully suitable as the freewheeling path in half-bridge and full-bridge topologies without external diodes.

How is thermal performance affected when mounting IPB16CN10N G without solder paste on the thermal pad?

Mounting without solder paste increases thermal resistance by ≥0.08 K/W due to interfacial voids, raising junction temperature by up to 12 °C at 100 W dissipation. Infineon specifies minimum 80% solder coverage on the thermal pad to maintain R_thJC ≤ 0.22 K/W.

Can IPB16CN10N G be paralleled for higher current capacity?

Yes-its positive temperature coefficient of V_CE(sat) enables stable current sharing. Parallel operation requires matched gate drive impedance (<5 Ω difference), symmetrical PCB layout, and individual gate resistors (10 Ω typical) to suppress oscillation. Derate total current by 15% for 2-device parallel configurations.

IPB16CN10N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16.5mOhm @ 53A, 10V

Vgs(th) (Max) @ Id:: 4V @ 61µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3220 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB16CN10N G FAQ

1.How can I place an order for IPB16CN10N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB16CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB16CN10N G reliable?

The price and inventory of IPB16CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB16CN10N G is usually 5 days.

3.What payment methods are accepted for IPB16CN10N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB16CN10N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB16CN10N G?

IPB16CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB16CN10N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB16CN10N G?

For technical support, including IPB16CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB16CN10N G requirements.

6.How does Aetrix verify that IPB16CN10N G is sourced from the original manufacturer or authorized distributors?

All IPB16CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB16CN10N G meets industry standards.

7.What is the process for return or replacement of IPB16CN10N G?

All IPB16CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPB16CN10N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB16CN10N G part is unused and in its original packaging.

Return procedure for IPB16CN10N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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