Infineon Technologies IPB180N03S4L01ATMA1

Overview

IPB180N03S4L01ATMA1 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-7-3 package, rated for 30 V V_DS, 180 A continuous drain current at T_C = 25 °C, and ultra-low 0.9–1.05 mΩ R_DS(on) at V_GS = 10 V. It is AEC-qualified, 100% avalanche tested, and supports automotive motor control and high-current DC-DC converter primary-side switching.

For engineers reviewing the IPB180N03S4L01ATMA1 datasheet, IPB180N03S4L01ATMA1 pinout, IPB180N03S4L01ATMA1 application, or IPB180N03S4L01ATMA1 equivalent, key selection criteria include its 0.8 K/W R_thJC, 175 °C max operating temperature, 720 A pulsed drain capability, and integrated robust body diode with 180 ns t_rr and 200 nC Q_rr.

Technical Context

This device employs Infineon's OptiMOS™-T2 trench MOSFET technology optimized for low conduction loss and fast switching in high-efficiency 12 V/24 V automotive systems. Its gate threshold voltage (1.0–2.2 V) enables reliable turn-on with standard logic-level drivers, while the 39–51 nC Q_gs and 187–239 nC total Q_g support controlled dv/dt and reduced EMI in hard-switched topologies.

The integrated Schottky-like body diode delivers 180 A continuous forward current and 720 A pulsed current, with V_SD = 0.9–1.3 V at 100 A and t_rr = 180 ns under defined conditions (V_R = 20 V, I_F = 100 A, di/dt = 100 A/µs), enabling efficient synchronous rectification and freewheeling in H-bridge motor drives.

Key Specifications

Pinout & Package

IPB180N03S4L01ATMA1 uses the PG-TO263-7-3 surface-mount package with exposed drain pad (pins 1–3 and 7 are source, pin 4 is gate, pins 5–6 are auxiliary source, pin 7 is drain tab). Thermal performance relies on soldering the large drain pad to ≥6 cm² copper area on FR4 PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Compared with IPB180N03S4H01ATMA1, this part adds Kelvin source capability for improved current sensing accuracy; versus IRL1404ZPBF, it delivers 3× lower conduction loss and certified automotive robustness-critical for safety-relevant 12 V/24 V power stages.

Availability

IPB180N03S4L01ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, 48 V mild hybrid DC-DC converters, and commercial vehicle starter solenoid drivers requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB180N03S4L01ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-current, low-voltage automotive power conversion and motor control applications demanding AEC-Q101 compliance, high avalanche ruggedness, and thermally efficient packaging.

FAQ

What is the maximum allowable gate-source voltage for IPB180N03S4L01ATMA1?

The absolute maximum V_GS is ±16 V. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to ≤12 V with a Zener diode or active clamp circuit, especially in noisy automotive environments where ringing may exceed 10 V.

Does IPB180N03S4L01ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dv/dt and prevent oscillation. Based on Q_g = 239 nC and target t_r ≈ 10 ns, a 10 Ω resistor is typical. Lower values (5–8 Ω) improve switching speed but increase EMI; higher values (15–22 Ω) reduce ringing at the cost of increased switching loss.

Can IPB180N03S4L01ATMA1 be paralleled with identical units for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (increases with T_j) enables stable current sharing. Use matched gate resistors, symmetrical PCB layout, and shared thermal mass. Derate total current by 15% for thermal imbalance; do not exceed 350 A combined with two units on a common 12 cm² copper area.

Is the drain tab electrically isolated from the PCB copper pour in PG-TO263-7-3 mounting?

No-the drain tab is metallurgically bonded to the internal die drain and must be soldered directly to a large copper pour serving as both current path and thermal interface. Electrical isolation would violate the package's thermal design intent and cause immediate thermal runaway at rated current.