Infineon Technologies IPB180N04S4LH0ATMA1

Overview

IPB180N04S4LH0ATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive high-current switching, featuring 40 V V_DS, 1.0 mΩ R_DS(on) at 10 V_GS, 180 A continuous drain current at T_C = 100 °C, and AEC-Q101 qualification. It operates up to 175 °C junction temperature and is 100% avalanche tested for robustness in motor control and DC-DC converter primary-side switching.

For engineers reviewing the IPB180N04S4LH0ATMA1 datasheet, IPB180N04S4LH0ATMA1 pinout, IPB180N04S4LH0ATMA1 application, or IPB180N04S4LH0ATMA1 equivalent, key selection criteria include its low R_DS(on) at 4.5 V_GS (1.1–1.4 mΩ), 720 A pulsed drain capability, integrated body diode with 130 nC Q_rr, and PG-TO263-7-3 package thermal resistance of 0.6 K/W.

Technical Context

This OptiMOSTM-T2 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate threshold voltage range (1.2–2.2 V) enables direct logic-level drive from 3.3 V or 5 V controllers, and its 239–310 nC total gate charge supports efficient high-frequency operation in synchronous rectification and H-bridge topologies.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 100 A and 80 ns reverse recovery time, enabling bidirectional energy handling in regenerative braking circuits. Thermal design is enabled by the 0.6 K/W junction-to-case resistance and MSL1 rating for lead-free reflow up to 260 °C.

Key Specifications

Pinout & Package

IPB180N04S4LH0ATMA1 is housed in a surface-mount PG-TO263-7-3 package with exposed drain pad for thermal management and seven terminals: three parallel drain pins (D1–D3), three source pins (S1–S3), and one gate pin (G). The package meets IPC-J-STD-020 MSL1 classification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with STL220N4LF8AG and IRFS7537PBF, IPB180N04S4LH0ATMA1 delivers superior thermal performance (0.6 K/W vs. ≥1.0 K/W), guaranteed avalanche ruggedness, and automotive qualification-making it the only choice for safety-critical traction and steering subsystems.

Availability

IPB180N04S4LH0ATMA1 is available at Aetrix Electronics and suitable for electric power steering, 48 V DC-DC conversion, onboard chargers, and regenerative braking inverters requiring stable component supply across multi-year automotive production cycles.

Supply support for IPB180N04S4LH0ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOSTM-T2 family, engineered specifically for high-efficiency, high-reliability automotive power conversion where low R_DS(on), fast switching, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB180N04S4LH0ATMA1?

The absolute maximum gate-source voltage is +20 V and –16 V, as specified in the datasheet. Exceeding +20 V risks permanent gate oxide damage, while negative voltage beyond –16 V may cause gate leakage or threshold shift. Recommended operating range is ±12 V for robustness in noisy automotive environments.

Does IPB180N04S4LH0ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. The datasheet specifies R_G = 3.5 Ω for dynamic characterization. For most automotive applications, 2.2–4.7 Ω is used to balance switching speed against EMI and gate driver stress; lower values increase peak gate current but reduce switching losses.

Can IPB180N04S4LH0ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherently stable current sharing. Layout must ensure matched gate and source loop inductances; use Kelvin source connections and individual gate resistors to avoid oscillation and unequal dynamic current distribution.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the integrated body diode is rated for 180 A continuous forward current and 720 A pulsed current. Its 0.9–1.3 V V_SD at 100 A and 80 ns t_rr make it viable for synchronous rectification in medium-frequency (<100 kHz) converters, though discrete Schottky diodes remain preferred for ultra-low V_F in high-efficiency designs.