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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB180N06S4H1ATMA1

Name: IPB180N06S4H1ATMA1
Brand: Infineon Technologies
SKU: IPB180N06S4H1ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB180N06S4H1ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB180N06S4H1ATMA1.pdf

Description:: MOSFET N-CH 60V 180A TO263-7

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Product details

Overview

IPB180N06S4H1ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-7-3 package, rated for 60 V V_DS, 180 A continuous drain current at T_C = 25 °C, and ultra-low 1.7 mΩ R_DS(on) max. It delivers high-current switching in automotive main inverters and on-board chargers.

For engineers reviewing the IPB180N06S4H1ATMA1 datasheet, IPB180N06S4H1ATMA1 pinout, IPB180N06S4H1ATMA1 application, or IPB180N06S4H1ATMA1 equivalent, key selection criteria include R_DS(on) at 100 A, single-pulse avalanche energy (700 mJ), thermal resistance (0.60 K/W), gate charge profile (Q_g = 208–270 nC), and 175 °C operating junction temperature capability.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its 1.3 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 100 A enables high-efficiency operation in 48 V and 60 V battery systems.

The MOSFET integrates a robust body diode with 90 nC Q_rr and 60 ns t_rr at 180 A, supporting synchronous rectification and hard-switched ZVS/ZCS topologies. Its 0.60 K/W R_thJC supports direct heatsink mounting in high-power motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V automotive bus and industrial DC-link applications
R_DS(on) max	1.7 mΩ - Enables <1.7 W conduction loss at 100 A, critical for thermal management in compact inverters
I_D continuous	180 A at T_C = 25 °C - Supports high-current phase legs without parallel devices in traction inverters
E_AS	700 mJ - Withstands single-pulse inductive energy surges up to 90 A without failure
Q_g	208–270 nC - Defines gate drive power requirement; compatible with standard 1–2 A peak gate drivers
R_thJC	0.60 K/W - Allows direct PCB-to-heatsink thermal path for >250 W power dissipation
t_r/t_f	5 ns / 15 ns - Enables sub-100 kHz switching with low switching loss in high-frequency motor control

Pinout & Package

IPB180N06S4H1ATMA1 uses the PG-TO263-7-3 surface-mount package with exposed drain pad for thermal and electrical connection. The 7-pin layout includes three source pins, one gate pin, and three drain terminals (including large-area drain tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main drain terminal	Electrically and thermally connected to exposed copper drain pad; primary current path and heatsink interface
Pins 2, 3, 4 (Source)	Source connections	Three parallel source pins reduce bondwire inductance and improve current sharing in high-di/dt switching
Pin 5 (Gate)	Control input	Low-impedance gate node requiring <3.5 Ω series resistance to damp ringing during 10 V switching
Pins 6, 7 (Drain)	Supplementary drain terminals	Reinforce current handling and thermal spreading across the drain tab; not isolated from Pin 1

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain use including engine control, EV inverters, and 12/48 V hybrid systems
100% avalanche tested	Each unit passes single-pulse E_AS stress test at 700 mJ, ensuring robustness against inductive kickback
175 °C maximum junction temperature	Enables operation in under-hood environments without derating in ambient up to 125 °C
Ultra-low R_DS(on)	1.3 mΩ typical at 100 A reduces conduction loss by >30% vs. prior-generation 60 V MOSFETs
Green Product (RoHS)	Lead-free and halogen-free construction compliant with EU Directive 2011/65/EU and IPC-1752A

Applications

Automotive Traction Inverter

On-Board Charger (OBC)

Use Scenario: High-power 3-phase inverter stage converting DC battery voltage to AC for electric motor drive in BEVs.

IC Role / Device Role / Timing Role: Main switch in each half-bridge leg, operating at 8–16 kHz with 180 A peak phase current.

Use Value: 1.7 mΩ R_DS(on) minimizes conduction loss at 100–150 A RMS, enabling >98.5% inverter efficiency at full load.

Use Scenario: Primary-side switching in bi-directional OBC using dual-active-bridge topology.

IC Role / Device Role / Timing Role: High-side and low-side switch in 60 V input stage handling 10 kW bidirectional power flow.

Use Value: 700 mJ E_AS withstands transformer leakage inductance energy during zero-voltage switching transitions.

Industrial Motor Drive

DC-DC Converter for 48 V Systems

Use Scenario: Compact 15–30 kW servo drive for robotics and CNC machinery with forced-air cooling.

IC Role / Device Role / Timing Role: Output stage MOSFET delivering 180 A pulsed current with <15 ns fall time for precise torque control.

Use Value: 0.60 K/W R_thJC allows direct heatsink mounting, eliminating thermal interface material and reducing thermal resistance by 40%.

Use Scenario: Step-down converter converting 48 V nominal bus to 12 V for auxiliary loads in commercial vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-current buck stage operating at 200 kHz with 100 A output.

Use Value: Body diode V_SD = 0.95 V typ. at 100 A lowers reverse recovery loss versus external Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 1.8 mΩ max, Q_g = 250 nC, R_thJC = 0.65 K/W	Slightly higher conduction loss and thermal resistance; same AEC-Q101 qualification	Preferred where gate drive strength exceeds 2 A and board-level thermal design accommodates +0.05 K/W penalty
IXFH180N06T2	R_DS(on) = 1.6 mΩ max, Q_g = 290 nC, no AEC-Q101 certification	Higher gate charge increases driver power demand; intended for industrial, not automotive, use	Select only for non-automotive applications where 175 °C operation and 100% avalanche testing are not required

Compared with STL220N6F7 and IXFH180N06T2, IPB180N06S4H1ATMA1 offers the lowest combined R_DS(on) × Q_g figure-of-merit (340 mΩ·nC), best thermal resistance, and full automotive qualification-making it optimal for space-constrained, high-reliability traction and charging systems.

Availability

IPB180N06S4H1ATMA1 is available at Aetrix Electronics and suitable for automotive traction inverters, on-board chargers, and industrial motor drives requiring stable component supply and long-term lifecycle support.

Supply support for IPB180N06S4H1ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 power transistor product line, engineered specifically for high-efficiency, high-current switching in automotive electrification and industrial motor control systems.

FAQ

What is the maximum allowable gate-source voltage for IPB180N06S4H1ATMA1?

The absolute maximum V_GS is ±20 V, but the recommended operating range is –10 V to +15 V for reliable turn-off and immunity to Miller-induced false triggering. Exceeding +15 V does not improve R_DS(on) and risks accelerated gate oxide degradation over lifetime.

Does IPB180N06S4H1ATMA1 require a negative gate drive for robust operation?

No negative gate drive is required. The device achieves full enhancement at V_GS ≥ 6 V and maintains stable off-state with 0 V gate bias. A –5 V to –10 V gate drive may be used in high-noise environments to increase noise margin, but it is not necessary for standard automotive or industrial operation.

How is the 180 A continuous current rating validated?

The 180 A rating is based on thermal limits at T_C = 25 °C with R_thJC = 0.60 K/W and P_tot = 250 W. At T_C = 100 °C, the rating remains 180 A due to bondwire current capacity-not junction temperature-being the limiting factor per datasheet footnote 1.

Can IPB180N06S4H1ATMA1 be paralleled with identical units without external gate resistors?

No. Even matched units require individual gate resistors (≥2.2 Ω) to suppress oscillation and ensure current sharing during dynamic switching. Layout symmetry, gate loop inductance matching, and Kelvin source routing are mandatory for stable parallel operation at 180 A per device.

IPB180N06S4H1ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 270 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 21900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB180N06S4H1ATMA1 FAQ

1.How can I place an order for IPB180N06S4H1ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB180N06S4H1ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB180N06S4H1ATMA1 reliable?

The price and inventory of IPB180N06S4H1ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB180N06S4H1ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB180N06S4H1ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB180N06S4H1ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB180N06S4H1ATMA1?

IPB180N06S4H1ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB180N06S4H1ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB180N06S4H1ATMA1?

For technical support, including IPB180N06S4H1ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB180N06S4H1ATMA1 requirements.

6.How does Aetrix verify that IPB180N06S4H1ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB180N06S4H1ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB180N06S4H1ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB180N06S4H1ATMA1?

All IPB180N06S4H1ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB180N06S4H1ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB180N06S4H1ATMA1 part is unused and in its original packaging.

Return procedure for IPB180N06S4H1ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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