Infineon Technologies IPB180N08S402ATMA1

Overview

IPB180N08S402ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode power MOSFET in PG-TO263-7-3 package, rated for 80 V V_DS, 180 A continuous drain current at T_C = 25 °C, and ultra-low 2.2 mΩ R_DS(on) max at V_GS = 10 V. It delivers high-current switching in automotive DC-DC converters, on-board chargers, and 48 V mild-hybrid systems with 175 °C junction temperature capability and 100% avalanche ruggedness.

For engineers reviewing the IPB180N08S402ATMA1 datasheet, IPB180N08S402ATMA1 pinout, IPB180N08S402ATMA1 application, or IPB180N08S402ATMA1 equivalent, key selection criteria include its 0.54 K/W R_thJC, 128–167 nC total gate charge, 80 V breakdown voltage, integrated body diode with 1.2 V V_SD at 100 A, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS™-T2 device employs trench-gate superjunction technology optimized for low conduction and switching losses in high-efficiency automotive power stages. Its gate threshold voltage (2.0–4.0 V) enables robust drive margin with standard 10 V gate drivers, while the 5.1 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The MOSFET integrates a fast-recovery body diode with t_rr ≤ 80 ns and Q_rr ≤ 160 nC at 40 V reverse bias, enabling synchronous rectification and ZVS-capable topologies. Thermal design is anchored by a validated 0.54 K/W junction-to-case resistance and 40 cm² PCB cooling requirement for 277 W power dissipation at T_C = 25 °C.

Key Specifications

Pinout & Package

IPB180N08S402ATMA1 uses the PG-TO263-7-3 surface-mount package with exposed drain pad (pins 1–3 and 7 are drain), source terminals on pins 4–6, and gate on pin 5. The package supports high-current PCB mounting with 6 cm² copper area and vertical orientation in still air.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 80 V power MOSFET applications.

Compared with STL220N8F7AG and IXFH180N08X4, IPB180N08S402ATMA1 uniquely combines AEC-Q101 qualification, MSL1 reflow compatibility, and PG-TO263-7-3 SMD packaging - making it the only choice for automotive-grade, high-density, surface-mount power stages requiring 180 A capability.

Availability

IPB180N08S402ATMA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, 48 V mild-hybrid systems, and industrial motor drives requiring stable component supply across multi-year production programs.

Supply support for IPB180N08S402ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-current automotive power conversion where low R_DS(on), avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB180N08S402ATMA1?

The absolute maximum V_GS is ±20 V, but operation above ±15 V is not recommended. Gate oxide integrity is guaranteed within this range, and typical drive uses +10 V for full enhancement and –5 V to –10 V for fast turn-off. Exceeding ±20 V risks permanent gate oxide damage even for sub-microsecond transients.

Does IPB180N08S402ATMA1 require a negative gate drive voltage?

No negative gate drive is required for basic operation, but applying –5 V to –10 V during turn-off significantly improves switching speed and reduces cross-conduction risk in half-bridge configurations. The device's V_GS(th) of 2.0–4.0 V ensures reliable turn-on with 0 V gate drive, though 10 V is standard for minimal R_DS(on).

How is the drain current rating affected at elevated case temperatures?

At T_C = 100 °C, the continuous drain current remains 180 A due to bondwire limitation-not thermal limitation-per datasheet footnote. However, safe operating area (SOA) curves show that pulsed current capability drops sharply above 100 °C, and R_DS(on) increases ~0.4%/°C, raising conduction loss proportionally.

Can IPB180N08S402ATMA1 be used in paralleled configurations?

Yes, its positive temperature coefficient of R_DS(on) (0.4%/°C) enables inherently self-balancing current sharing. Layout must ensure matched gate and source inductance across all paralleled units, and gate resistors should be individually tuned to equalize switching timing. Derating by 15% per additional device is recommended for thermal margin.