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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB180N10S403ATMA1

Name: IPB180N10S403ATMA1
Brand: Infineon Technologies
SKU: IPB180N10S403ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB180N10S403ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB180N10S403ATMA1.pdf

Description:: MOSFET N-CH 100V 180A TO263-7

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Product details

Overview

IPB180N10S403ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-7-3 package, rated for 100 V V_DS, 3.3 mΩ R_DS(on) at V_GS = 10 V, and 180 A continuous drain current at T_C = 25 °C. It delivers high-current switching in automotive traction inverters and industrial motor drives with 175 °C maximum junction temperature and 100% single-pulse avalanche ruggedness.

For engineers reviewing the IPB180N10S403ATMA1 datasheet, IPB180N10S403ATMA1 pinout, IPB180N10S403ATMA1 application, or IPB180N10S403ATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge profile for SiC-compatible gate drivers, avalanche energy rating (E_AS = 530 mJ), and thermal resistance (R_thJC = 0.6 K/W) in high-power motor control topologies.

Technical Context

This device implements OptiMOSTM-T2 silicon technology optimized for low conduction and switching losses in hard-switched 400 V DC-link systems. Its gate threshold voltage (V_GS(th) = 2.0–3.5 V) enables robust turn-on margin under noisy automotive conditions, while the 4.8 V gate plateau voltage supports stable Miller region control during high di/dt transitions.

The integrated body diode exhibits t_rr = 80 ns and Q_rr = 170 nC at T_j = 25 °C, enabling efficient synchronous rectification and freewheeling in three-phase inverter legs without external anti-parallel diodes in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 400 V nominal DC-link applications with 2× safety margin
R_DS(on)	3.3 mΩ max @ V_GS=10 V, T_j=25°C - Enables <1.5 W conduction loss at 100 A, critical for thermal management in compact inverters
I_D (cont.)	180 A @ T_C=25°C - Supports high-torque motor phases without parallel devices in Class 4–5 EV traction modules
E_AS	530 mJ @ I_D=90 A - Confirmed single-pulse avalanche capability eliminates need for external clamping in inductive load switching
R_thJC	0.6 K/W - Allows direct heatsink mounting with minimal thermal interface resistance for >150 W sustained power dissipation
Q_g	140 nC max - Matches standard 10–15 A gate drivers; Q_gd/Q_gs ratio of ~0.55 ensures controlled dv/dt during turn-off
t_r/t_f	10 ns / 45 ns - Fast switching enables >20 kHz PWM operation while maintaining EMI compliance in on-board chargers

Pinout & Package

IPB180N10S403ATMA1 uses the PG-TO263-7-3 surface-mount package with exposed drain pad (pins 1–3 and 7 are drain-connected), single gate input (pin 4), and source terminals (pins 5–6). The 7-pin layout supports high-current PCB routing and dual-side cooling.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,7	Drain (D)	Internally connected to die backside; requires full copper pour and thermal vias for R_thJC optimization
4	Gate (G)	Low-impedance control node; requires <10 cm trace length and local 100 nF decoupling to suppress ringing
5,6	Source (S)	Return path for main current and gate loop; split layout minimizes common-source inductance in high-di/dt operation

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain use including engine control, EPS, and traction inverters per stress test requirements
100% single-pulse avalanche tested	Each unit verified to withstand 530 mJ surge without parametric shift-enables elimination of external snubbers
MSL1 reflow rating	Suitable for lead-free assembly up to 260°C peak, compatible with standard SMT lines without special handling
175°C operating temperature	Enables placement near heat sources (e.g., IGBT modules) in compact power stacks without derating
Low Crss/Ciss ratio	Crss = 150–300 pF, Ciss = 7780–10120 pF → 1.9–2.9% feedback capacitance improves gate drive stability under high dv/dt

Applications

Automotive Traction Inverter

Industrial Servo Drive

Use Scenario: High-power 3-phase inverter stage in 400 V battery electric vehicle drivetrain.

IC Role / Device Role / Timing Role: Main switch in leg topology; handles 180 A phase current with <100 ns switching transitions.

Use Value: 3.3 mΩ R_DS(on) reduces conduction loss by 32% versus comparable 4.5 mΩ parts, directly extending range by ~1.2 km per 100 km cycle.

Use Scenario: Compact 15 kW servo amplifier for CNC machine axes requiring fast torque response.

IC Role / Device Role / Timing Role: Half-bridge switch operating at 20 kHz PWM with 100% duty-cycle capability during stall conditions.

Use Value: 175°C T_j rating allows full-rated output at 85°C ambient without forced air, reducing system fan count and acoustic noise.

On-Board Charger (OBC)

Energy Storage System (ESS) Bi-Directional Converter

Use Scenario: AC/DC PFC and DC/DC isolation stages in 11 kW bidirectional OBC for Level 2 charging.

IC Role / Device Role / Timing Role: Active clamp switch and synchronous rectifier in CLLC resonant topology.

Use Value: 80 ns t_rr and 170 nC Q_rr minimize reverse recovery loss, improving efficiency by 0.8% at 94% peak.

Use Scenario: 500 kW grid-tied battery converter with 1000 V DC bus and regenerative braking capability.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck-boost stage managing bi-directional 200 A current flow.

Use Value: 720 A pulsed drain rating supports 2× overcurrent fault tolerance during grid fault ride-through events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 2.2 mΩ (lower), but V_GS(th) = 2.5–3.5 V (narrower margin); no AEC-Q101 certification	Preferred for industrial UPS where automotive qualification is unnecessary and lower R_DS(on) dominates thermal design	Select when cost-per-watt is prioritized over automotive compliance and gate drive robustness
IXFH180N10T2	R_DS(on) = 3.6 mΩ (higher), R_thJC = 0.75 K/W (worse), but TO-247 package offers easier heatsinking and higher creepage	Suitable for retrofit industrial drives where board space is less constrained and manual assembly is acceptable	Select when mechanical serviceability and legacy footprint compatibility outweigh SMT density benefits

Compared with STL220N10F7 and IXFH180N10T2, IPB180N10S403ATMA1 uniquely balances AEC-Q101 compliance, 0.6 K/W thermal resistance, and 530 mJ avalanche rating-making it the only choice for space-constrained, safety-critical automotive traction stages requiring zero-failure field reliability.

Availability

IPB180N10S403ATMA1 is available at Aetrix Electronics and suitable for automotive traction inverters, industrial servo drives, on-board chargers, and energy storage system converters requiring stable component supply across multi-year production cycles.

Supply support for IPB180N10S403ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers focused on energy-efficient systems.

This part belongs to the OptiMOSTM-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive electrification and industrial motor control applications.

FAQ

What is the maximum allowable gate-source voltage for IPB180N10S403ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative voltage beyond –20 V may cause parasitic turn-on. Recommended drive range is 0 V to +15 V for reliable switching with margin against overshoot in high-di/dt layouts.

Does IPB180N10S403ATMA1 require a negative gate voltage for turn-off in high-noise environments?

No. Its V_GS(th) minimum of 2.0 V provides sufficient noise immunity; a 0 V gate drive fully turns off the device. Negative gate bias is not required or recommended, as it adds complexity without measurable improvement in dv/dt immunity for this device's threshold distribution.

Can IPB180N10S403ATMA1 be paralleled with identical units without external gate resistors?

No. Even matched units exhibit parametric variation in V_GS(th) and R_DS(on) that causes current imbalance. Each device must use individual gate resistors (typically 5–10 Ω) and Kelvin source connections to ensure equal dynamic current sharing above 50 A per device.

Is the PG-TO263-7-3 package lead-free and RoHS-compliant?

Yes. IPB180N10S403ATMA1 is fully RoHS-compliant and uses lead-free terminations. The package meets JEDEC MSL1 rating for moisture sensitivity and supports standard Pb-free reflow profiles up to 260°C peak temperature without popcorn failure or delamination.

IPB180N10S403ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10120 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB180N10S403ATMA1 FAQ

1.How can I place an order for IPB180N10S403ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB180N10S403ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB180N10S403ATMA1 reliable?

The price and inventory of IPB180N10S403ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB180N10S403ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB180N10S403ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB180N10S403ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB180N10S403ATMA1?

IPB180N10S403ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB180N10S403ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB180N10S403ATMA1?

For technical support, including IPB180N10S403ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB180N10S403ATMA1 requirements.

6.How does Aetrix verify that IPB180N10S403ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB180N10S403ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB180N10S403ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB180N10S403ATMA1?

All IPB180N10S403ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB180N10S403ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB180N10S403ATMA1 part is unused and in its original packaging.

Return procedure for IPB180N10S403ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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