Infineon Technologies IPB230N06L3GATMA1

Overview

IPB230N06L3GATMA1 from Infineon Technologies is an N-channel logic-level MOSFET optimized for high-frequency switching and synchronous rectification in DC/DC converters. It features 60 V V_DS, 23 mΩ R_DS(on) (max) at V_GS = 10 V, 30 A continuous drain current, 100% avalanche tested, and PG-TO263-3 package. It serves as a primary power switch in buck converters for telecom and server VRMs.

For engineers reviewing the IPB230N06L3GATMA1 datasheet, IPB230N06L3GATMA1 pinout, IPB230N06L3GATMA1 application, or IPB230N06L3GATMA1 equivalent, key selection criteria include gate charge × R_DS(on) figure of merit (FOM), 4.5 V logic-level drive capability, thermal resistance (R_thJC = 4.2 K/W), and integrated body diode performance (t_rr = 27 ns, Q_rr = 23 nC).

Technical Context

This OptiMOS™3 device uses trench-based silicon technology to achieve low gate charge (Q_g = 7–10 nC) and low output capacitance (C_oss = 270 pF typ), enabling efficient operation above 500 kHz in hard-switched topologies. Its 1.2–2.2 V gate threshold voltage ensures stable turn-on with standard logic drivers.

The integrated Schottky-like body diode delivers fast reverse recovery (t_rr = 27 ns) and low Q_rr (23 nC), reducing switching losses in synchronous rectifier configurations. Thermal design is supported by a low junction-to-case resistance (4.2 K/W) and JEDEC-qualified reliability for industrial and computing applications.

Key Specifications

Pinout & Package

IPB230N06L3GATMA1 is housed in a PG-TO263-3 (D²PAK) surface-mount package with isolated drain tab. The package supports high-current PCB mounting and direct heatsinking via the exposed drain pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPP230N06L3G, IPB230N06L3GATMA1 offers identical electrical specs but superior thermal performance in automated SMT production; versus IRL3803PBF, it trades raw R_DS(on) for lower Q_g, better 4.5 V drive margin, and tighter t_rr/Q_rr control-critical for high-frequency sync rectification.

Availability

IPB230N06L3GATMA1 is available at Aetrix Electronics and suitable for telecom point-of-load converters, server VRMs, industrial motor drives, and LED driver synchronous rectifiers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPB230N06L3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification to JEDEC standards.

This device belongs to the OptiMOS™3 power transistor product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies.

FAQ

Is IPB230N06L3GATMA1 suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.2–2.2 V and guaranteed R_DS(on) ≤40.8 mΩ at V_GS = 4.5 V, it fully turns on using standard 3.3 V logic outputs. Measured gate plateau voltage is 4.2 V, confirming strong enhancement-mode behavior well within 3.3 V drive margin.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies optimal thermal performance with a 6 cm² copper area (one layer, 70 µm thick) on FR4, vertically mounted in still air. This achieves R_thJA = 40 K/W. Reducing copper area increases junction temperature linearly; halving area raises R_thJA to ~52 K/W.

Does this MOSFET include an integrated Schottky diode?

No. It features a robust, fast-recovery parasitic body diode inherent to vertical N-channel MOSFET structure-not a discrete Schottky. However, its t_rr = 27 ns and Q_rr = 23 nC are optimized for synchronous rectification, matching performance of many discrete Schottkys in 48 V applications.

Can IPB230N06L3GATMA1 replace IPP230N06L3G in existing designs?

Yes, with layout adaptation. Both share identical die and electrical specs, but IPB230N06L3GATMA1 uses PG-TO263-3 (SMD), while IPP230N06L3G uses PG-TO220-3 (through-hole). Pad layout, thermal relief, and reflow profile must be updated; no circuit redesign is needed.