Infineon Technologies IPB240N03S4LR8ATMA1

Overview

IPB240N03S4LR8ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-7-3 package, rated for 30 V V_DS, 0.61 mΩ R_DS(on) at V_GS = 10 V and I_D = 100 A, 240 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - deployed in automotive high-current DC-DC converters and motor control inverters.

For engineers reviewing the IPB240N03S4LR8ATMA1 datasheet, IPB240N03S4LR8ATMA1 pinout, IPB240N03S4LR8ATMA1 application, or IPB240N03S4LR8ATMA1 equivalent, key selection criteria include ultra-low R_DS(on), 100% avalanche-tested ruggedness, MSL1 reflow compatibility, thermal resistance of 0.5 K/W (junction-to-case), and integrated body diode with 86 ns t_rr and 149 nC Q_rr.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (1.0–2.2 V) enables robust TTL/CMOS-level drive, while the 290–380 nC total gate charge supports efficient gate driver sizing for hard-switched topologies.

The MOSFET integrates a co-packaged Schottky-like body diode with 0.9–1.3 V forward voltage at 100 A and exhibits single-pulse avalanche capability up to 945 mJ at I_AS = 190 A - critical for inductive load commutation in EPS, HVAC blowers, and 48 V mild-hybrid battery disconnects.

Key Specifications

Pinout & Package

PG-TO263-7-3 (D²PAK-7) thermally enhanced surface-mount package with exposed drain pad (pins 1–3 and 7 are source, pin 4 is gate, pins 5–6 are drain-connected tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 30 V automotive MOSFET applications.

Compared with STL220N3LLH6 and IRFB4115PBF, IPB240N03S4LR8ATMA1 delivers the lowest R_DS(on) and best thermal resistance in an AEC-Q101-compliant D²PAK-7 package - making it optimal for space-constrained, high-efficiency automotive power stages where junction temperature must stay below 150 °C at full load.

Availability

IPB240N03S4LR8ATMA1 is available at Aetrix Electronics and suitable for electric power steering, 48 V battery disconnect, and on-board charger applications requiring stable component supply across multi-year automotive production cycles.

Supply support for IPB240N03S4LR8ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability 12 V/24 V/48 V automotive power conversion - emphasizing low R_DS(on), rugged avalanche performance, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB240N03S4LR8ATMA1?

The absolute maximum gate-source voltage is ±16 V. Operation above +10 V or below –5 V is not recommended for long-term reliability. Gate drive circuits must limit transient overshoot using clamping diodes or RC snubbers, especially in high-dV/dt environments like motor phase-legs.

Does IPB240N03S4LR8ATMA1 require a negative gate voltage for turn-off in high-speed switching?

No. With a typical V_GS(th) of 1.5 V and low Miller plateau voltage (2.7 V), the device fully turns off with 0 V gate drive. Negative gate bias is unnecessary and may accelerate gate oxide wear; 0 V to 10 V drive is sufficient for clean switching in automotive inverters.

How is the drain current rating affected at elevated case temperatures?

At T_C = 100 °C, the continuous drain current remains 240 A due to bondwire-limited current handling - not silicon-limited. However, thermal design must ensure junction temperature stays ≤175 °C; derating applies only when R_thJC exceeds 0.5 K/W or ambient exceeds 105 °C.

Can IPB240N03S4LR8ATMA1 be used in paralleled configurations?

Yes - its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Layout must balance gate loop inductance and source inductance across all paralleled devices; use individual gate resistors (≥5 Ω) and Kelvin source connections to prevent oscillation and unequal dynamic current distribution.