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Infineon Technologies IPB240N03S4LR9ATMA1

Part No.:
IPB240N03S4LR9ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet:
AetrixIPB240N03S4LR9ATMA1.pdf
Description:
MOSFET N-CH 30V 240A TO263-7
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,190

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Product details

Overview

IPB240N03S4LR9ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-7-3 package, rated for 30 V VDS, 0.72 mΩ RDS(on) at VGS = 10 V and ID = 100 A, 240 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature - deployed in automotive high-current motor control and DC-DC converter output stages.

For engineers reviewing the IPB240N03S4LR9ATMA1 datasheet, IPB240N03S4LR9ATMA1 pinout, IPB240N03S4LR9ATMA1 application, or IPB240N03S4LR9ATMA1 equivalent, key selection criteria include ultra-low RDS(on), 100% avalanche energy rating (750 mJ), thermal resistance RthJC = 0.65 K/W, and AEC qualification for under-hood automotive use.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology to achieve sub-1 mΩ on-resistance with low gate charge (Qg = 230–300 nC) and optimized capacitance profile (Ciss = 15.4–20.3 nF, Crss = 0.16–0.32 nF). Its 0.65 K/W junction-to-case thermal resistance enables high-power operation on minimal PCB copper area.

The integrated body diode supports synchronous rectification with trr = 62 ns and Qrr = 100 nC, while 190 A single-pulse avalanche current and 750 mJ EAS ensure robustness against inductive switching stress in motor drive and power supply applications.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage for 12 V/24 V automotive systems
RDS(on) @ VGS=10 V0.72–0.92 mΩ - Enables <1 W conduction loss at 240 A in high-efficiency inverters
ID (continuous)240 A @ TC = 25 °C - Supports high-current motor phase legs without parallel devices
EAS750 mJ - Withstands single-pulse inductive energy without failure in H-bridge commutation
RthJC0.65 K/W - Allows direct heatsink mounting for thermal management in compact modules
Qg230–300 nC - Balances fast switching speed and gate driver power requirements
trr / Qrr62 ns / 100 nC - Reduces reverse recovery losses in synchronous buck and half-bridge topologies

Pinout & Package

Package: PG-TO263-7-3 (D²PAK-7L), surface-mount, thermally enhanced with exposed drain pad and 7-pin configuration. Pin 1–3: Source; Pin 4–6: Drain (common); Pin 7: Gate.

Pin/TerminalCircuit RoleDesign Meaning
1–3 (Source)Power source return pathLow-inductance triple-source connection reduces common-source inductance in high-dI/dt switching
4–6 (Drain)Main power output terminalInternally paralleled drain terminals tied to large copper pad for thermal and current handling
7 (Gate)Control inputIsolated gate terminal with defined threshold (VGS(th) = 1.0–2.2 V) for TTL/CMOS-compatible drive

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive under-hood applications including engine control and EPS
100% unclamped inductive switching testedGuarantees avalanche ruggedness up to 750 mJ per pulse without derating
Ultra-low RDS(on) with low QgOptimizes figure-of-merit RDS(on) × Qg = 0.21–0.28 Ω·nC for high-frequency efficiency
MSL1 reflow compatibleWithstands peak soldering temperatures up to 260 °C without delamination or parameter shift
Green RoHS-compliant packageHalogen-free, lead-free construction meeting automotive environmental compliance standards

Applications

Automotive Electric Power Steering (EPS)48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current H-bridge driving brushless motor in steering column assembly.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in three-phase inverter stage.

Use Value: 0.72 mΩ RDS(on) minimizes conduction loss at 200+ A peak currents, reducing thermal load in confined space.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V LLC resonant converter.

IC Role / Device Role / Timing Role: High-current, low-VDS power switch operating at 200–500 kHz.

Use Value: 62 ns trr and 100 nC Qrr suppress reverse recovery spikes, enabling ZVS operation and improving efficiency >96%.

Onboard Charger (OBC) Output StageIndustrial Motor Drive Inverter Module

Use Scenario: Secondary-side synchronous rectification in 6.6 kW OBC AC/DC stage.

IC Role / Device Role / Timing Role: 30 V-rated power switch handling 200 A continuous output current.

Use Value: 240 A rating and 175 °C Tj allow full-load operation without forced air cooling in sealed enclosures.

Use Scenario: Phase-leg switching in 3 kW servo drive with regenerative braking.

IC Role / Device Role / Timing Role: High-reliability power transistor in IGBT replacement topology.

Use Value: 190 A IAS and 750 mJ EAS withstand regenerative energy surges during rapid deceleration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB240N03S4HATMA1RDS(on) = 0.85–1.05 mΩ (higher), same package and AEC-Q101 ratingSlightly higher conduction loss; suitable where thermal margin existsSelect when lower gate charge (Qg = 210–270 nC) is prioritized over absolute RDS(on)
STL240N3LLH630 V, RDS(on) = 0.95 mΩ, non-AEC-Q101, TO-263-7 packageLacks automotive qualification; limited to industrial/commercial environmentsChoose only for cost-sensitive non-automotive designs with identical thermal constraints

Compared with IPB240N03S4LR9ATMA1, the IPB240N03S4HATMA1 trades marginal RDS(on) increase for reduced Qg, while STL240N3LLH6 omits AEC-Q101 validation - making the original part uniquely suited for safety-critical automotive power stages requiring both ultra-low on-resistance and qualification assurance.

Availability

IPB240N03S4LR9ATMA1 is available at Aetrix Electronics and suitable for automotive electric power steering, 48 V mild hybrid converters, and onboard charger output stages requiring stable component supply and long-term lifecycle support.

Supply support for IPB240N03S4LR9ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T product line, engineered specifically for high-current, high-reliability automotive power conversion - emphasizing low RDS(on), avalanche ruggedness, and AEC-Q101 compliance.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPB240N03S4LR9ATMA1 has a specified maximum junction temperature of +175 °C, validated across its full operating range. This rating is supported by thermal characterization data showing stable RDS(on) behavior up to 175 °C and guaranteed avalanche performance at elevated temperatures, enabling use in under-hood environments without active cooling.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device features a gate threshold voltage range of 1.0–2.2 V and is fully compatible with 0 V to 10 V gate drive. A negative gate voltage is not required for safe turn-off; however, applying –2 V to –5 V can improve noise immunity in high-dI/dt automotive environments, as confirmed by Infineon's recommended gate drive circuit guidelines.

How is the 750 mJ avalanche energy rating validated?

The 750 mJ EAS rating is derived from 100% unclamped inductive switching (UIS) testing per JEDEC JESD24-11, using ID = 120 A and standardized test conditions. Each production lot undergoes statistical sampling for UIS stress, and the value reflects worst-case single-pulse capability at Tj = 25 °C, with derating curves provided in the datasheet for elevated temperatures.

Can this device be used in parallel configurations?

Yes - the device exhibits positive temperature coefficient for RDS(on) above 100 °C, enabling inherently self-balancing current sharing. Parallel operation requires matched gate drive layout, symmetrical PCB copper pours, and individual gate resistors (≥10 Ω) to dampen oscillation; design guidance is documented in Infineon Application Note AN2015-04.

IPB240N03S4LR9ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
0.92mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:
300 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
20300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
231W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-7-3

IPB240N03S4LR9ATMA1 FAQ

1.How can I place an order for IPB240N03S4LR9ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB240N03S4LR9ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB240N03S4LR9ATMA1 reliable?

The price and inventory of IPB240N03S4LR9ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB240N03S4LR9ATMA1 is usually 5 days.

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IPB240N03S4LR9ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB240N03S4LR9ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB240N03S4LR9ATMA1?

For technical support, including IPB240N03S4LR9ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB240N03S4LR9ATMA1 requirements.

6.How does Aetrix verify that IPB240N03S4LR9ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB240N03S4LR9ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB240N03S4LR9ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB240N03S4LR9ATMA1?

All IPB240N03S4LR9ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB240N03S4LR9ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB240N03S4LR9ATMA1 part is unused and in its original packaging.

Return procedure for IPB240N03S4LR9ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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