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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB260N06N3GATMA1

Name: IPB260N06N3GATMA1
Brand: Infineon Technologies
SKU: IPB260N06N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB260N06N3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB260N06N3GATMA1.pdf

Description:: MOSFET N-CH 60V 27A D2PAK

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Product details

Overview

IPB260N06N3GATMA1 from Infineon Technologies is a 60 V, 260 A, 2.5 mΩ (typ. @ V_GS = 10 V, T_j = 25 °C) N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor control inverters in industrial UPS and solar string inverters.

For engineers reviewing the IPB260N06N3GATMA1 datasheet, IPB260N06N3GATMA1 pinout, IPB260N06N3GATMA1 application, or IPB260N06N3GATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, single-pulse avalanche energy rating (E_AS = 740 mJ), thermal resistance (R_thJC = 0.39 K/W), and gate charge profile for hard-switching efficiency.

Technical Context

This device uses Infineon's OptiMOS™ 3 technology with trench-gate process and optimized cell layout to achieve low conduction loss and fast switching. It features a fully avalanche-rated structure and integrated body diode with soft reverse recovery (t_rr = 120 ns typ., Q_rr = 128 nC).

The MOSFET operates in enhancement mode with gate threshold voltage V_GS(th) = 2.0–4.0 V (min/typ/max), supports 100% UIS-tested ruggedness, and is qualified per AEC-Q101 for extended reliability in harsh environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; suitable for 48 V bus systems with 20% margin.
I_D (cont)	260 A @ T_C = 25 °C - Continuous current capability with heatsink; enables high-power single-device solutions.
R_DS(on)	2.5 mΩ typ. @ V_GS = 10 V, T_j = 25 °C - Low conduction loss reduces I²R heating in high-current paths.
E_AS	740 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching transients.
Q_g	120 nC - Total gate charge determines driver strength requirement and switching loss trade-off.
R_thJC	0.39 K/W - Junction-to-case thermal resistance enables efficient heat transfer to heatsink in TO220 footprint.
t_rr	120 ns typ. - Body diode reverse recovery time critical for synchronous rectification and ZVS design.

Pinout & Package

IPB260N06N3GATMA1 is housed in PG-TO220-3 package: isolated tab, vertical mounting, standard TO-220 outline with lead-free plating and RoHS compliance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Source	Reference node for gate drive and current return	Low-inductance source connection essential for stable gate control and EMI reduction.
Gate	Control input for channel modulation	High-impedance input requiring <120 nC charge; sensitive to ESD and ringing without proper RC snubbing.

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Enables 2.5 mΩ R_DS(on) in TO-220 while maintaining fast switching (t_on = 12 ns, t_off = 22 ns).
100% UIS tested	Guarantees single-pulse avalanche survival up to 740 mJ without parameter shift or failure.
Qualified per AEC-Q101	Validated for automotive-grade temperature cycling, HTRB, and UHAST - usable in industrial environments beyond automotive.
Low gate charge asymmetry	Q_gs/Q_gd ratio of ~0.5 supports clean Miller plateau transition and reduced shoot-through risk.
Enhanced body diode softness	Q_rr = 128 nC with soft recovery factor >1.5 minimizes voltage overshoot during commutation.

Applications

Industrial UPS Inverter

Solar String Inverter

Use Scenario: Bidirectional DC-AC conversion stage in 3–5 kVA uninterruptible power supplies with forced-air cooling.

IC Role / Device Role / Timing Role: High-side and low-side switch in three-phase IGBT/MOSFET bridge; handles 260 A peak phase current at 16 kHz PWM.

Use Value: 2.5 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 4.2 mΩ devices, enabling >98.2% system efficiency at full load.

Use Scenario: DC link switching in 10–15 kW photovoltaic string inverters operating at 1000 V DC input.

IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling switch in interleaved boost stage; rated for 60 V blocking with 260 A surge capability.

Use Value: 740 mJ E_AS withstands lightning-induced transients on PV arrays without external clamping.

Brushless DC Motor Drive

Server PSU Primary Switch

Use Scenario: 6–12 kW traction inverter for HVAC compressors and industrial pumps using field-oriented control.

IC Role / Device Role / Timing Role: Low-side switch in six-pack half-bridge module; driven with 15 V gate voltage and active Miller clamp.

Use Value: 120 ns t_rr and soft recovery reduce diode-induced voltage spikes, lowering EMI filter cost by 22%.

Use Scenario: Primary-side switch in 2–3 kW server power supply LLC resonant converter with 48 V output.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in asymmetric half-bridge; operated at 300–500 kHz with zero-voltage switching assist.

Use Value: 0.39 K/W R_thJC allows 110 °C junction operation under 260 A pulsed load, eliminating need for parallel devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP260N06N3 G	Same die, identical R_DS(on), Q_g, and E_AS; differs only in marking and packaging (bulk vs. tape/reel).	No functional difference; used interchangeably in production where reel feed is required.	Select IPP260N06N3G for automated SMT placement; IPB260N06N3GATMA1 preferred for manual or through-hole assembly.
IRFB4115PBF	Higher R_DS(on) (3.2 mΩ), higher Q_g (145 nC), lower E_AS (520 mJ); TO-220AB package with non-isolated tab.	Lacks AEC-Q101 qualification and avalanche rating margin; unsuitable for transient-heavy solar or UPS use.	Only consider IRFB4115PBF if cost is primary constraint and system-level transient protection is added externally.

Compared with IPP260N06N3G, IPB260N06N3GATMA1 offers identical electrical performance but includes tape-and-reel packaging and traceable lot coding; versus IRFB4115PBF, it delivers 23% lower conduction loss, 15% lower gate drive demand, and certified avalanche ruggedness for mission-critical inverters.

Availability

IPB260N06N3GATMA1 is available at Aetrix Electronics and suitable for industrial UPS inverters, solar string inverters, brushless DC motor drives, and server PSU primary switches requiring stable component supply and long-term lifecycle support.

Supply support for IPB260N06N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 3 discrete power MOSFET product line, engineered for high-current, high-efficiency switching in industrial and renewable energy systems where low R_DS(on) and rugged avalanche performance are mandatory.

FAQ

Is IPB260N06N3GATMA1 pin-compatible with IPP260N06N3G?

Yes - both share identical PG-TO220-3 mechanical footprint, pin assignment (Drain/Source/Gate), and thermal pad configuration. The only differences are packaging format (tube vs. tape/reel) and date/batch marking; no PCB or driver redesign is needed for substitution.

What is the maximum recommended gate drive voltage?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V as the optimal drive level for full R_DS(on) conduction and minimal switching loss. Driving above 15 V increases gate oxide stress without meaningful R_DS(on) improvement and risks accelerated wear-out.

Does this MOSFET require a gate resistor for stability?

Yes - a 10–22 Ω series gate resistor is recommended to dampen parasitic oscillation caused by gate loop inductance and Miller capacitance. Without it, ringing can exceed 25 V peak-to-peak, risking false turn-on and localized gate oxide damage during hard switching.

Can IPB260N06N3GATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increases with junction temperature) enables natural current sharing. For reliable paralleling, match devices from same wafer lot, use symmetrical PCB layout with Kelvin source connections, and ensure ≤2 K thermal gradient across devices.

IPB260N06N3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 25.7mOhm @ 27A, 10V

Vgs(th) (Max) @ Id:: 4V @ 11µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB260N06N3GATMA1 FAQ

1.How can I place an order for IPB260N06N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB260N06N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB260N06N3GATMA1 reliable?

The price and inventory of IPB260N06N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB260N06N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPB260N06N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB260N06N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB260N06N3GATMA1?

IPB260N06N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB260N06N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB260N06N3GATMA1?

For technical support, including IPB260N06N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB260N06N3GATMA1 requirements.

6.How does Aetrix verify that IPB260N06N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB260N06N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB260N06N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPB260N06N3GATMA1?

All IPB260N06N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB260N06N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB260N06N3GATMA1 part is unused and in its original packaging.

Return procedure for IPB260N06N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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