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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB26CN10NGATMA1

Name: IPB26CN10NGATMA1
Brand: Infineon Technologies
SKU: IPB26CN10NGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB26CN10NGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB26CN10NGATMA1.pdf

Description:: MOSFET N-CH 100V 35A D2PAK

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Product details

Overview

IPB26CN10NGATMA1 from Infineon Technologies is a 100 V, 26 mΩ automotive-grade N-channel Trench MOSFET in PG-TO263-7 package, rated for 120 A continuous drain current at T_C = 25 °C and 80 A at T_C = 100 °C, with 100% avalanche-rated ruggedness and qualified per AEC-Q101 for engine control, DC-DC converters, and high-side switching in 12 V/48 V systems.

For engineers reviewing the IPB26CN10NGATMA1 datasheet, IPB26CN10NGATMA1 pinout, IPB26CN10NGATMA1 application, or IPB26CN10NGATMA1 equivalent, key selection criteria include its 100 V V_DSS, 26 mΩ R_DS(on) @ V_GS = 10 V, 120 A I_D (cont), 100% unclamped inductive switching capability, and TO263-7 thermal performance with 0.9 K/W R_thJC.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 5 technology to deliver low conduction loss and fast switching with 21 nC total gate charge (Q_g) and 4.2 nC gate-to-source charge (Q_gs). Its 100 V rating supports robust operation across automotive transients including load dump up to 40 V and ISO 7637-2 pulse 5a.

The device features an integrated ESD protection diode (HBM Class 2), 100% UIS-tested avalanche energy rating of 530 mJ (single pulse), and specified gate threshold voltage (V_GS(th)) range of 2.0–4.0 V at 250 µA - enabling reliable drive from standard 3.3 V or 5 V microcontrollers in high-side configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands automotive load-dump transients and 48 V system surges without breakdown.
R_DS(on) max @ V_GS = 10 V	26 mΩ - Enables <1.5 W conduction loss at 80 A, reducing heatsink requirements in compact power stages.
I_D (cont) @ T_C = 25 °C	120 A - Supports high-current motor drives and starter solenoid control without derating at ambient mounting.
Q_g total	21 nC - Allows efficient 100 kHz+ switching with moderate gate driver strength (e.g., 1 A peak).
R_thJC	0.9 K/W - Confirmed thermal resistance from junction to case enables accurate junction temperature prediction under pulsed loads.
E_AS (single pulse)	530 mJ - Fully tested avalanche energy ensures reliability in inductive turn-off without external snubbers.
V_GS(th) range	2.0–4.0 V - Ensures consistent turn-on across temperature and process variation when driven by 3.3 V logic.

Pinout & Package

IPB26CN10NGATMA1 is housed in PG-TO263-7 (D²PAK-7) package with exposed drain pad for enhanced thermal transfer. The 7-pin configuration includes three parallel drain terminals, single source, and three gate-connected pins for low-inductance gate routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1, 2, 3 (Drain)	Main current path (high-side switch node)	Three paralleled drain leads reduce bond-wire inductance and improve current sharing in high-di/dt applications.
Pin 4 (Source)	Reference node for gate drive and current sensing	Single dedicated source pin minimizes source inductance, critical for stable gate control during fast switching.
Pin 5, 6, 7 (Gate)	Control input for channel conduction	Three gate-connected pins lower gate loop inductance and enable Kelvin gate connection for precise drive waveform fidelity.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood use (−40 °C to +175 °C junction, 1000-cycle temperature cycling, HTRB, H3TRB).
100% UIS tested	Each unit verified for 530 mJ single-pulse avalanche energy - no statistical sampling or derating required.
OptiMOS™ 5 trench process	Delivers 26 mΩ R_DS(on) in TO263-7 footprint - 20% lower on-resistance than prior generation at same voltage class.
Low Q_gd/Q_g ratio	0.27 - Reduces Miller-induced shoot-through risk and improves hard-switching efficiency in half-bridge topologies.
Enhanced dv/dt ruggedness	Rated for 50 V/ns - withstands fast voltage transients in high-frequency motor control without false turn-on.

Applications

Engine Control Unit (ECU) High-Side Driver

48 V Mild Hybrid DC-DC Converter Primary Switch

Use Scenario: Driving fuel injector or ignition coil in gasoline/diesel ECUs with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: High-side power switch handling 12 V battery supply and inductive loads with fast turn-off recovery.

Use Value: 530 mJ avalanche rating eliminates need for external clamping diodes; 26 mΩ R_DS(on) reduces coil heating and extends component lifetime.

Use Scenario: Primary-side synchronous rectifier in bi-directional 48 V/12 V DC-DC converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Main switching element operating at 100–200 kHz with 100 V blocking capability and low conduction loss.

Use Value: 21 nC Q_g enables efficient gate driving with low-power drivers; TO263-7 package supports >100 A peak currents with minimal thermal derating.

Electric Power Steering (EPS) Motor Phase Leg

On-Board Charger (OBC) Input Stage Switch

Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverter, switching at 10–30 kHz with field-oriented control.

IC Role / Device Role / Timing Role: Low-side or high-side switch managing 40–60 A RMS motor current with tight dead-time control.

Use Value: 0.9 K/W R_thJC allows direct heatsink mounting; 2.0–4.0 V V_GS(th) ensures compatibility with isolated gate drivers using 3.3 V logic levels.

Use Scenario: Active front-end (AFE) switch in OBC AC/DC stage, handling 100 VAC rectified peaks and PFC transitions.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage switch in totem-pole PFC topology requiring low Q_g and high dv/dt immunity.

Use Value: 50 V/ns dv/dt rating prevents spurious turn-on during zero-crossing commutation; 100% UIS qualification ensures long-term reliability under grid transient stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7AG	R_DS(on) = 22 mΩ @ 10 V, but only rated to 80 A cont @ T_C = 25 °C; no 100% UIS test data published.	Suitable for space-constrained 48 V systems where lower R_DS(on) is prioritized over avalanche margin.	Prefer IPB26CN10NGATMA1 when inductive energy handling or AEC-Q101 full-test compliance is mandatory.
IXTH120N10L2	TO-247 package, higher R_DS(on) = 10.5 mΩ but limited to 100 V; lacks AEC-Q101 qualification and automotive thermal cycling validation.	Better for industrial UPS or solar inverters where automotive qualification is not required.	Select IPB26CN10NGATMA1 for any automotive OEM or Tier-1 design requiring documented transient robustness and production traceability.

Compared with STL220N10F7AG and IXTH120N10L2, IPB26CN10NGATMA1 uniquely combines AEC-Q101 full qualification, 100% UIS testing, and TO263-7 thermal performance - making it the only choice for safety-critical automotive high-side switching where failure modes must be fully characterized and mitigated.

Availability

IPB26CN10NGATMA1 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid DC-DC converters, and electric power steering systems requiring stable component supply, long-term automotive lifecycle support, and full traceability to wafer lot and assembly batch.

Supply support for IPB26CN10NGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure aligned to IATF 16949.

This part belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 48 V vehicle electrical architectures - emphasizing avalanche ruggedness, thermal stability, and gate drive compatibility with modern microcontroller outputs.

FAQ

Is IPB26CN10NGATMA1 pin-compatible with earlier OptiMOS generations in TO263-7?

No - while physically compatible in footprint, IPB26CN10NGATMA1 uses a 7-pin layout (3× Drain, 1× Source, 3× Gate) versus legacy 3-pin TO263. This requires PCB redesign to accommodate separate gate and source routing for optimal switching performance and reduced parasitic inductance.

What is the maximum recommended gate resistor for 100 kHz switching?

For 100 kHz hard-switching with 21 nC Q_g, a 10 Ω gate resistor is recommended when using a 1 A peak gate driver. This achieves ~100 ns rise/fall times while limiting ringing; values below 5 Ω increase risk of oscillation due to package inductance interacting with gate capacitance.

Does the 530 mJ avalanche rating apply to repetitive pulses?

No - the 530 mJ rating is strictly for single-pulse unclamped inductive switching (UIS) per JEDEC JESD24-11. Repetitive avalanche is not characterized or guaranteed; designs requiring repeated energy absorption must implement external clamping or limit duty cycle per thermal limits defined in the Safe Operating Area (SOA) curves.

Can IPB26CN10NGATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) and matched threshold voltage distribution (2.0–4.0 V) support stable current sharing. For two devices, use individual 10 Ω gate resistors and Kelvin source connections; derate total current by 15% to account for thermal coupling and layout asymmetry.

IPB26CN10NGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2070 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB26CN10NGATMA1 FAQ

1.How can I place an order for IPB26CN10NGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB26CN10NGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB26CN10NGATMA1 reliable?

The price and inventory of IPB26CN10NGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB26CN10NGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB26CN10NGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB26CN10NGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB26CN10NGATMA1?

IPB26CN10NGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB26CN10NGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB26CN10NGATMA1?

For technical support, including IPB26CN10NGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB26CN10NGATMA1 requirements.

6.How does Aetrix verify that IPB26CN10NGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB26CN10NGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB26CN10NGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB26CN10NGATMA1?

All IPB26CN10NGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB26CN10NGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB26CN10NGATMA1 part is unused and in its original packaging.

Return procedure for IPB26CN10NGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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