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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB34CN10NGATMA1

Name: IPB34CN10NGATMA1
Brand: Infineon Technologies
SKU: IPB34CN10NGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB34CN10NGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB34CN10NGATMA1.pdf

Description:: MOSFET N-CH 100V 27A D2PAK

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Product details

Overview

IPB34CN10NGATMA1 from Infineon Technologies is a 100 V, 34 mΩ single N-channel Trench MOSFET in PG-HSOF-8 package, rated for 100 A continuous drain current at T_C = 25 °C and 70 A at T_C = 100 °C, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPB34CN10NGATMA1 datasheet, IPB34CN10NGATMA1 pinout, IPB34CN10NGATMA1 application, or IPB34CN10NGATMA1 equivalent, key selection criteria include R_DS(on) @ 10 V (34 mΩ max), Q_g (39 nC typ), Q_gd (11 nC typ), thermal resistance R_thJC (0.5 K/W), and avalanche ruggedness (E_AS = 420 mJ @ I_D = 50 A).

Technical Context

This device employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure to achieve low conduction and switching losses simultaneously. Its gate threshold voltage (V_GS(th)) of 2.0–3.5 V enables robust 5 V gate drive compatibility, while the low Q_gd/Q_g ratio (0.28) supports fast, stable hard-switching operation up to 1 MHz.

The MOSFET features integrated avalanche energy rating (E_AS = 420 mJ), specified under repetitive unclamped inductive switching (UIS) conditions. Its SO-8 variant (PG-HSOF-8) uses exposed drain pad for enhanced thermal performance and supports bottom-side cooling in compact, high-power-density layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage for 48 V input bus applications with 2× safety margin
R_DS(on) max @ V_GS = 10 V	34 mΩ - enables <1.5 W conduction loss at 70 A continuous current in VRM high-side switches
Q_g typ	39 nC - determines gate drive power requirement (~195 µW per MHz at 5 V drive)
Q_gd typ	11 nC - critical for dV/dt immunity and Miller-induced turn-on suppression in synchronous buck stages
R_thJC	0.5 K/W - allows 70 W power dissipation with ≤35 K junction-to-case temperature rise at steady state
E_AS	420 mJ - ensures reliable operation during transient overcurrent events without external snubbers
I_D cont @ T_C = 100 °C	70 A - defines usable current capability in thermally constrained PCB layouts with forced air cooling

Pinout & Package

PG-HSOF-8 (HSOF = High-Side Optimized Flatlead) is a surface-mount, thermally enhanced SO-8 variant with exposed drain pad on underside for direct thermal coupling to PCB copper. Pin 1–4 are source terminals; Pin 5–8 are drain terminals; Gate is on Pin 3 (dual-source configuration reduces source inductance).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1, 2, 4	Source	Low-inductance parallel source connection for reduced switching oscillation and improved EMI
Pin 3	Gate	Single gate input with low C_iss (2,400 pF) enabling fast edge rates with standard gate drivers
Pin 5–8 + Exposed Pad	Drain	High-current drain path; exposed copper pad provides primary thermal path to PCB ground plane

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Simultaneous optimization of R_DS(on) × Q_g figure-of-merit to 1.33 Ω·nC for minimal total power loss
Repetitive avalanche rated	Guaranteed 420 mJ E_AS enables robustness against inductive kickback without derating
Low Q_gd/Q_g ratio (0.28)	Reduces risk of false turn-on during high dV/dt commutation in synchronous rectifiers
Thermally enhanced PG-HSOF-8	0.5 K/W R_thJC supports >70 W dissipation with 2 oz copper and 4 thermal vias under drain pad
Lead-free and RoHS compliant	Meets IPC-J-STD-020D moisture sensitivity level 1 (MSL1) for unlimited floor life

Applications

Server VRM High-Side Switch

Telecom 48 V Input DC-DC Converter

Use Scenario: Primary switch in multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 300 A peak.

IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 34 mΩ R_DS(on) and 39 nC Q_g minimize combined conduction and switching losses, improving full-load efficiency by ≥0.8% vs. prior-gen MOSFETs.

Use Scenario: Step-down conversion from 48 V intermediate bus to 12 V/24 V distribution rails in 5G base station power modules.

IC Role / Device Role / Timing Role: Main switching FET in isolated or non-isolated forward/flyback-derived topologies with 200–500 kHz switching frequency.

Use Value: 100 V V_DS rating accommodates 48 V bus transients (e.g., load dump), while 0.5 K/W R_thJC sustains 65 W dissipation in confined airflow environments.

Industrial Motor Drive Half-Bridge

EV On-Board Charger (OBC) PFC Stage

Use Scenario: Upper-leg switch in three-phase inverter driving 3–7.5 kW BLDC motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Hard-switched high-side MOSFET in 6–12 kHz PWM inverters with bootstrap gate drive.

Use Value: Avalanche rating (420 mJ) withstands inductive flyback energy during short-circuit fault conditions without failure.

Use Scenario: Boost switch in active PFC front-end stage converting AC mains to 400 V DC bus for 3.3–11 kW OBCs.

IC Role / Device Role / Timing Role: Fast-switching boost FET operating at 65–135 kHz with zero-voltage switching (ZVS) assistance.

Use Value: Low Q_gd (11 nC) and tight V_GS(th) tolerance (2.0–3.5 V) ensure predictable ZVS boundary and reduced turn-off losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7AG	R_DS(on) = 2.2 mΩ higher (36.2 mΩ), Q_g = 42 nC, R_thJC = 0.55 K/W	Slightly lower efficiency at high load; requires larger thermal pad area for same power	Preferred where ST ecosystem integration (e.g., gate drivers) simplifies design
IXFH32N10X3	TO-247 package, R_DS(on) = 32 mΩ, Q_g = 48 nC, R_thJC = 0.45 K/W	Higher board space cost; superior thermal performance but incompatible with automated SMT assembly	Chosen when discrete heatsink mounting and maximum thermal headroom outweigh SMT constraints

Compared with STL220N10F7AG and IXFH32N10X3, IPB34CN10NGATMA1 delivers the best balance of low-profile SMT manufacturability, 34 mΩ conduction loss, and 39 nC gate charge-making it optimal for space-constrained, high-frequency VRMs and telecom converters where assembly yield and layout density are critical.

Availability

IPB34CN10NGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPB34CN10NGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications where low R_DS(on) × Q_g FoM and avalanche ruggedness are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (T_J) is 175 °C, but continuous operation above 150 °C is not recommended due to accelerated parametric drift and reduced long-term reliability. Derating curves in the datasheet specify I_D limits versus T_C; at T_C = 100 °C, the rated continuous current is 70 A with R_DS(on) measured at 10 V gate drive.

Does this MOSFET require a negative gate voltage for safe turn-off in high-dV/dt environments?

No. The device has a gate threshold voltage (V_GS(th)) range of 2.0–3.5 V and is fully compatible with 0 V to 10 V or 0 V to 12 V gate drive schemes. Its low Q_gd/Q_g ratio (0.28) and tight V_GS(th) distribution provide inherent immunity to Miller-induced turn-on without requiring negative gate bias.

Can IPB34CN10NGATMA1 be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) ensures current sharing stability. Layout must equalize gate and source loop inductances across all paralleled devices; use dedicated Kelvin source connections if available. Thermal coupling between devices should be minimized via separate thermal pads or staggered placement to avoid localized hot spots.

Is the PG-HSOF-8 package compatible with standard SO-8 reflow profiles?

Yes. It follows JEDEC J-STD-020D MSL1 requirements and is qualified for peak reflow temperatures up to 260 °C (20 sec). The exposed drain pad requires solder paste stencil design with ≥70% aperture ratio and thermal relief patterns to prevent voiding; IPC-7351B land pattern "SOIC8_HSOF" is recommended.

IPB34CN10NGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 34mOhm @ 27A, 10V

Vgs(th) (Max) @ Id:: 4V @ 29µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1570 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB34CN10NGATMA1 FAQ

1.How can I place an order for IPB34CN10NGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB34CN10NGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB34CN10NGATMA1 reliable?

The price and inventory of IPB34CN10NGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB34CN10NGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB34CN10NGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB34CN10NGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB34CN10NGATMA1?

IPB34CN10NGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB34CN10NGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB34CN10NGATMA1?

For technical support, including IPB34CN10NGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB34CN10NGATMA1 requirements.

6.How does Aetrix verify that IPB34CN10NGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB34CN10NGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB34CN10NGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB34CN10NGATMA1?

All IPB34CN10NGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB34CN10NGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB34CN10NGATMA1 part is unused and in its original packaging.

Return procedure for IPB34CN10NGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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