Infineon Technologies IPB35N10S3L26ATMA1

Overview

IPB35N10S3L26ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 100 V V_DS, 35 A continuous drain current at T_C = 25 °C, and 26.3 mΩ R_DS(on) at V_GS = 10 V - used in automotive DC-DC converters, motor control inverters, and high-reliability industrial SMPS.

For engineers reviewing the IPB35N10S3L26ATMA1 datasheet, IPB35N10S3L26ATMA1 pinout, IPB35N10S3L26ATMA1 application, or IPB35N10S3L26ATMA1 equivalent, key selection criteria include avalanche ruggedness (175 mJ single-pulse), 175 °C max junction temperature, gate plateau voltage (3.7 V), and thermal resistance R_thJC = 2.1 K/W for thermal design validation.

Technical Context

This OptiMOS™-T device employs trench-gate superjunction technology optimized for low conduction and switching losses in hard-switched automotive power stages. Its 4.5 V gate drive capability enables compatibility with 5 V logic controllers, while the integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies.

The MOSFET features fully characterized dynamic parameters including C_iss = 2700 pF (max), Q_g = 39 nC (max), and t_r/t_f ≤ 4 ns/3 ns - enabling high-frequency operation up to 500 kHz in compact power supplies without excessive gate drive loss.

Key Specifications

Pinout & Package

Package: PG-TO263-3-2 (D²PAK), surface-mount, isolated drain tab, 3-pin configuration with exposed drain pad for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with STL34N10LH6AG and IXTP35N10P, IPB35N10S3L26ATMA1 delivers superior automotive reliability, lower thermal resistance, and tighter R_DS(on) tolerance - critical for volume production in safety-critical 48 V systems.

Availability

IPB35N10S3L26ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB35N10S3L26ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™-T product line - engineered specifically for high-efficiency, high-reliability automotive power conversion where thermal robustness, avalanche immunity, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB35N10S3L26ATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks irreversible gate oxide damage. For reliable long-term use, gate drive should be clamped to +12 V to +15 V during switching and held at 0 V when off - especially under high dv/dt conditions where Miller-induced turn-on may occur.

Does IPB35N10S3L26ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and suppress oscillation. With typical Q_g = 34.5 nC and target t_r ≈ 5 ns, a 3.5 Ω resistor is recommended per Infineon's evaluation board design. Lower values increase EMI risk; higher values raise switching losses and thermal stress on the driver.

Can IPB35N10S3L26ATMA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Its positive R_DS(on) temperature coefficient (α = 0.56) enables inherent current sharing above 100 °C. However, gate drive skew and parasitic inductance must be minimized - differential gate resistors and Kelvin source connections are strongly advised.

Is the drain tab electrically isolated in the PG-TO263-3-2 package?

No - the exposed drain tab is directly connected to the drain terminal (Pin 3). It must be electrically insulated from the heatsink using a thermally conductive but electrically isolating pad (e.g., ceramic or silicone-based insulator) unless the heatsink is referenced to the drain potential in the circuit.