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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB35N10S3L26ATMA2

Name: IPB35N10S3L26ATMA2
Brand: Infineon Technologies
SKU: IPB35N10S3L26ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB35N10S3L26ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB35N10S3L26ATMA2.pdf

Description:: MOSFET_(75V 120V(

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Product details

Overview

IPB35N10S3L26ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 100 V V_DS, 35 A continuous drain current at T_C = 25°C, and 26.3 mΩ maximum R_DS(on) at V_GS = 10 V. It delivers robust avalanche performance (175 mJ single-pulse), operates up to 175°C junction temperature, and is used in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB35N10S3L26ATMA2 datasheet, IPB35N10S3L26ATMA2 pinout, IPB35N10S3L26ATMA2 application, or IPB35N10S3L26ATMA2 equivalent, key selection criteria include its 26.3 mΩ on-resistance at 10 V gate drive, 140 A pulsed drain capability, AEC-Q101 qualification, TO263-3 thermal performance (R_thJC = 2.1 K/W), and integrated body diode with 79 ns t_rr.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-efficiency 12 V/24 V automotive systems. Its gate threshold voltage (1.2–2.4 V) enables reliable 3.3 V and 5 V logic-level drive compatibility while maintaining noise immunity.

The MOSFET integrates a fast-recovery body diode (t_rr = 79 ns, Q_rr = 150 nC) and supports hard-switched topologies with controlled turn-off delay (18 ns) and low reverse transfer capacitance (C_rss = 50–75 pF), reducing Miller-induced shoot-through risk in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 24 V automotive battery systems with 4× safety margin against load dump transients
R_DS(on) max	26.3 mΩ at V_GS = 10 V - enables ≤1.5 W conduction loss at 35 A continuous operation
I_D cont	35 A at T_C = 25°C - suitable for high-current motor phase legs and DC-DC primary switches
E_AS	175 mJ single-pulse - withstands inductive energy release without failure in relay/snubber-free designs
t_rr	79 ns - minimizes diode recovery loss and EMI in synchronous rectification and H-bridge freewheeling
R_thJC	2.1 K/W - allows direct heatsink mounting for >70 W power dissipation with <150°C case rise
Q_g	30–39 nC - compatible with standard gate drivers (e.g., 1 A peak) for <100 ns total switching time

Pinout & Package

Package: PG-TO263-3-2 (D²PAK), surface-mount, isolated drain tab, 3-pin configuration with G-D-S layout. Thermal pad on drain connects directly to PCB copper for low-junction-to-case resistance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to ground or low-side switch node; carries full load current and sets gate drive return path
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; driven by dedicated gate driver with 3.5 Ω series resistance per datasheet test condition
Pin 3 (Drain)	Power output / high-side connection	Exposed metal tab; electrically and thermally connected to internal drain; must be soldered to ≥6 cm² copper area for rated P_tot

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity bias, and mechanical shock per Rev. D requirements
175°C maximum operating temperature	Enables placement near heat sources (e.g., engine bay ECUs) without derating below 100% I_D at T_C = 100°C
100% avalanche tested	Every unit undergoes single-pulse avalanche stress at I_AS = 35 A, ensuring robustness in inductive switching faults
MSL1 rating (260°C peak reflow)	Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns
Low Q_gd/Q_g ratio (≈0.2–0.27)	Reduces Miller plateau duration and improves controllability during hard commutation events

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Inverters

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch handling 35 A continuous current with synchronized gate control.

Use Value: 26.3 mΩ R_DS(on) limits conduction loss to <0.5 W at 20 A, improving system efficiency by ≥1.2% vs. legacy 40 mΩ parts.

Use Scenario: Three-phase inverter driving 300 W brushless motor in column-assist EPS module.

IC Role / Device Role / Timing Role: Low-side switching element with fast body diode recovery for PWM freewheeling.

Use Value: 79 ns t_rr reduces diode reverse recovery loss by 35% compared to 120 ns alternatives, lowering MOSFET temperature rise by 8°C.

Onboard Charger (OBC) PFC Stage

12 V Battery Backup Systems

Use Scenario: Boost PFC switch in 3.3 kW single-phase OBC with interleaved topology.

IC Role / Device Role / Timing Role: High-frequency (65–100 kHz) switching device with low C_oss (460–600 pF) for reduced capacitive loss.

Use Value: 2.1 K/W R_thJC enables direct heatsink mounting, sustaining 35 A at 100°C case without forced air cooling.

Use Scenario: Load switch protecting infotainment head unit during cold-crank (4.5 V battery).

IC Role / Device Role / Timing Role: Low-threshold (V_GS(th) = 1.2–2.4 V) N-channel high-side switch with integrated charge pump.

Use Value: Gate drive compatibility with 3.3 V microcontroller GPIO eliminates need for level-shifting circuitry, reducing BOM count by 2 components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL34N10LH6AG	R_DS(on) = 28 mΩ @ 10 V; lower Q_g (26 nC); no AEC-Q101 certification	Not qualified for automotive safety-critical modules; limited to industrial/commercial 24 V supplies	Select only if AEC-Q101 is not required and gate drive current budget is constrained
IRF3205PBF	R_DS(on) = 40 mΩ @ 10 V; higher R_thJC (3.0 K/W); non-automotive grade	Higher conduction loss (≥2.5 W at 35 A); unsuitable for sustained 175°C ambient environments	Use only in cost-sensitive, non-automotive applications where thermal margin exceeds 40°C

Compared with STL34N10LH6AG and IRF3205PBF, IPB35N10S3L26ATMA2 provides superior automotive qualification, lower on-resistance, and better thermal resistance-enabling smaller heatsinks and higher reliability in safety-critical drivetrain subsystems.

Availability

IPB35N10S3L26ATMA2 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and onboard charger applications requiring stable component supply across extended product lifecycles.

Supply support for IPB35N10S3L26ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T family, engineered specifically for high-efficiency, high-reliability 12 V/24 V automotive power stages-including DC-DC, motor drives, and battery protection-where AEC-Q101 compliance and thermal robustness are mandatory.

FAQ

Is IPB35N10S3L26ATMA2 pin-compatible with earlier IPB35N10S3L variants?

Yes, it maintains identical PG-TO263-3-2 footprint and pinout (G-S-D) with prior revisions of the IPB35N10S3L series. The "26" suffix denotes the 26.3 mΩ R_DS(on) bin; electrical and thermal specs remain consistent with Rev. 1.2 datasheet, and no PCB redesign is needed for drop-in replacement.

What is the maximum recommended gate resistor value for 100 kHz switching in a half-bridge?

Based on Q_g = 34.5 nC (typ.) and desired 50 ns turn-on time, a 1.5 Ω gate resistor is recommended with a 2 A peak driver. Values above 3.5 Ω increase switching loss significantly; the datasheet specifies R_G = 3.5 Ω for all dynamic timing measurements.

Does the body diode support synchronous rectification in continuous conduction mode?

Yes-the body diode has t_rr = 79 ns and Q_rr = 150 nC at T_j = 25°C, enabling efficient synchronous rectification in CCM when paired with precise gate timing. However, external Schottky diodes are preferred for >150 kHz operation due to lower Q_rr drift with temperature.

Can this MOSFET be used in linear (analog) regulation mode?

No-it is not characterized or guaranteed for linear-mode operation. Safe Operating Area (SOA) curves show limited DC capability beyond 10 V V_DS; prolonged operation in the linear region risks thermal runaway due to positive R_DS(on) temperature coefficient and insufficient SOA margin at high V_DS/I_D combinations.

IPB35N10S3L26ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 26.3mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB35N10S3L26ATMA2 FAQ

1.How can I place an order for IPB35N10S3L26ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB35N10S3L26ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB35N10S3L26ATMA2 reliable?

The price and inventory of IPB35N10S3L26ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB35N10S3L26ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB35N10S3L26ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB35N10S3L26ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB35N10S3L26ATMA2?

IPB35N10S3L26ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB35N10S3L26ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB35N10S3L26ATMA2?

For technical support, including IPB35N10S3L26ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB35N10S3L26ATMA2 requirements.

6.How does Aetrix verify that IPB35N10S3L26ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB35N10S3L26ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB35N10S3L26ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB35N10S3L26ATMA2?

All IPB35N10S3L26ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB35N10S3L26ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB35N10S3L26ATMA2 part is unused and in its original packaging.

Return procedure for IPB35N10S3L26ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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