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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB35N12S3L26ATMA1

Name: IPB35N12S3L26ATMA1
Brand: Infineon Technologies
SKU: IPB35N12S3L26ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB35N12S3L26ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB35N12S3L26ATMA1.pdf

Description:: MOSFET N-CHANNEL_100+

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Product details

Overview

IPB35N12S3L26ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 120 V V_DS, 35 A continuous drain current at T_C = 25°C, and 26.3 mΩ R_DS(on) at V_GS = 10 V - deployed in automotive DC-DC converters, motor control inverters, and high-reliability body electronics.

For engineers reviewing the IPB35N12S3L26ATMA1 datasheet, IPB35N12S3L26ATMA1 pinout, IPB35N12S3L26ATMA1 application, or IPB35N12S3L26ATMA1 equivalent, key selection criteria include its 175°C junction rating, 100% avalanche tested robustness, MSL1 reflow compatibility, and optimized gate charge (Q_g = 30–39 nC) for fast-switching 12–48 V automotive systems.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (1.2–2.4 V) enables reliable 3.3 V and 5 V logic-level drive in modern microcontroller-based gate drivers.

The integrated body diode features low forward voltage (V_SD = 0.6–1.2 V at 35 A) and fast reverse recovery (t_rr = 79 ns, Q_rr = 150 nC), supporting synchronous rectification and bidirectional energy transfer in regenerative braking circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 48 V nominal battery systems with ≥2× overvoltage margin for load dump transients
R_DS(on) max	26.3 mΩ at V_GS = 10 V - enables <1.5 W conduction loss at 35 A, reducing heatsink requirements
I_D continuous	35 A at T_C = 25°C - delivers high power density in compact TO263 footprint
E_AS	175 mJ - withstands single-pulse inductive energy without failure in motor phase-leg applications
Q_g	30–39 nC - balances switching speed and gate driver power loss for 20–100 kHz PWM operation
t_r/t_f	4 ns / 3 ns - minimizes switching transition time, reducing overlap losses in half-bridge topologies
T_j max	+175°C - enables operation in under-hood environments without derating at ambient up to 125°C

Pinout & Package

IPB35N12S3L26ATMA1 uses the PG-TO263-3-2 surface-mount package with exposed drain tab for thermal performance. The 3-pin configuration places Gate (pin 1), Source (pin 2), and Drain (tab) in standard D²PAK layout.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts 0–10 V logic-level drive; requires <10 nC Q_gs for turn-on
Pin 2	Source	Reference node for gate drive; connects to low-side switch source or current sense resistor
Tab (Drain)	Drain	Main power output terminal; electrically and thermally connected to PCB copper area for R_thJC = 2.1 K/W

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive temperature cycling, humidity, and mechanical shock per JESD22 standards
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at rated I_AS = 35 A, ensuring field reliability
MSL1 rating	Compatible with lead-free reflow profiles up to 260°C peak, eliminating moisture sensitivity handling
Green product (RoHS)	Lead-free terminations and halogen-free molding compound compliant with EU Directive 2011/65/EU
Optimized body diode	Low Q_rr (150 nC) and t_rr (79 ns) reduce commutation losses in synchronous buck and H-bridge configurations

Applications

Automotive DC-DC Converter

Electric Power Steering (EPS)

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase buck converter operating at 100 kHz.

Use Value: 26.3 mΩ R_DS(on) and 39 nC Q_g enable >95% efficiency at 20 A load while maintaining thermal stability at T_j ≤ 150°C.

Use Scenario: Inverter leg switching in 3-phase brushless DC motor drive for steering assist.

IC Role / Device Role / Timing Role: Low-side power switch in 60 kHz PWM-controlled inverter with active freewheeling via body diode.

Use Value: 79 ns t_rr and 150 nC Q_rr minimize shoot-through risk and diode conduction loss during commutation.

Body Control Module (BCM)

Start-Stop System Solenoid Driver

Use Scenario: Load switching for HVAC actuators, lighting, and window lift motors in centralized BCM.

IC Role / Device Role / Timing Role: High-current protected switch replacing electromechanical relays; driven by CAN-linked MCU GPIO.

Use Value: 35 A continuous rating and 175 mJ E_AS allow direct driving of inductive loads without external snubbers.

Use Scenario: High-energy solenoid actuation for starter engagement in 12 V start-stop systems.

IC Role / Device Role / Timing Role: Single-pole power switch controlling 200 ms, 50 A inrush pulses during engine cranking.

Use Value: 140 A pulsed drain current rating and 175°C T_j max ensure safe operation across cold-cranking (-40°C) to hot-soak (125°C ambient) conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL34N10F7	100 V V_DS, 34 A I_D, 28 mΩ R_DS(on), same PG-TO263-3-2 package	Limited to 100 V systems; lower avalanche energy (120 mJ)	Acceptable for 24 V subsystems where 120 V margin is not required
IRF3205PbF	55 V V_DS, 110 A I_D, 8 mΩ R_DS(on), TO-220 package	Non-automotive grade; no AEC-Q101; higher R_thJA (62 K/W vs. 2.1 K/W case-to-junction)	Only suitable for non-automotive industrial use with forced-air cooling

Compared with STL34N10F7 and IRF3205PbF, IPB35N12S3L26ATMA1 uniquely combines 120 V rating, AEC-Q101 compliance, and ultra-low R_thJC in a surface-mount package - making it irreplaceable for space-constrained, high-temperature automotive power stages requiring long-term reliability.

Availability

IPB35N12S3L26ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering modules, and body control units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPB35N12S3L26ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability automotive power conversion - emphasizing low R_DS(on), robust avalanche capability, and AEC-Q101 qualification.

FAQ

Is IPB35N12S3L26ATMA1 pin-compatible with earlier OptiMOS™ S3 generation parts?

No. While sharing the PG-TO263-3-2 package outline, IPB35N12S3L26ATMA1 has different internal die design and gate charge profile versus legacy S3 devices like IPB30N12S3L-26. Pinout is identical (G-S-D), but gate drive timing and thermal behavior require validation in new designs.

What is the maximum recommended gate resistor value for 100 kHz switching?

For 100 kHz PWM with V_GS = 10 V drive, a 3.5 Ω gate resistor is specified in the datasheet to achieve t_r = 4 ns and t_f = 3 ns. Increasing R_G beyond 5 Ω significantly degrades switching speed and increases dynamic losses - use 2.2–3.5 Ω for optimal trade-off between EMI and efficiency.

Does the device require external gate clamping for 12 V automotive systems?

No. The ±20 V V_GS rating and built-in gate oxide protection allow direct connection to 12 V MCU GPIO or dedicated gate drivers without external Zener clamping, provided layout minimizes ringing and dV/dt-induced false turn-on.

Can IPB35N12S3L26ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (R_DS(on) increases with T_j) enables inherent current sharing. Parallel operation requires matched layout, symmetrical gate drive paths, and shared source inductance <10 nH to avoid dynamic imbalance at high di/dt.

IPB35N12S3L26ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ T

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 26.3mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB35N12S3L26ATMA1 FAQ

1.How can I place an order for IPB35N12S3L26ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB35N12S3L26ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB35N12S3L26ATMA1 reliable?

The price and inventory of IPB35N12S3L26ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB35N12S3L26ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB35N12S3L26ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB35N12S3L26ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB35N12S3L26ATMA1?

IPB35N12S3L26ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB35N12S3L26ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB35N12S3L26ATMA1?

For technical support, including IPB35N12S3L26ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB35N12S3L26ATMA1 requirements.

6.How does Aetrix verify that IPB35N12S3L26ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB35N12S3L26ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB35N12S3L26ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB35N12S3L26ATMA1?

All IPB35N12S3L26ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB35N12S3L26ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB35N12S3L26ATMA1 part is unused and in its original packaging.

Return procedure for IPB35N12S3L26ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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