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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB45N06S3-16

Name: IPB45N06S3-16
Brand: Infineon Technologies
SKU: IPB45N06S3-16
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB45N06S3-16

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB45N06S3-16.pdf

Description:: MOSFET N-CH 55V 45A TO263-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB45N06S3-16 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 45 A continuous drain current at T_C = 25 °C, and 15.4 mΩ max R_DS(on) (SMD version), with AEC-Q101 qualification for automotive applications including engine control units and DC-DC converters.

For engineers reviewing the IPB45N06S3-16 datasheet, IPB45N06S3-16 pinout, IPB45N06S3-16 application, or IPB45N06S3-16 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, single-pulse avalanche energy (145 mJ), thermal resistance (R_thJC = 2.3 K/W), and 175 °C maximum junction temperature capability.

Technical Context

This device uses trench-gate silicon technology optimized for low conduction and switching losses in high-efficiency 12 V/24 V automotive power stages. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity under transient conditions.

The integrated body diode exhibits 1.1–1.3 V forward voltage at 45 A and 20 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck converters and motor H-bridges without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 12 V/24 V automotive systems with 2× supply margin
R_DS(on) max	15.4 mΩ @ V_GS = 10 V, I_D = 23 A (SMD version) - Enables <1.5 W conduction loss at 45 A
I_D cont.	45 A @ T_C = 25 °C - Supports high-current loads such as starter relays and battery disconnect switches
E_AS	145 mJ @ I_D = 22.5 A - Withstands inductive turn-off transients in solenoid drivers without snubbers
R_thJC	2.3 K/W - Allows direct heatsink mounting for >60 W power dissipation at ΔT = 138 K
Q_g	43–57 nC - Compatible with standard gate drivers (e.g., 1 A peak) for <100 ns switching transitions
T_j max	+175 °C - Rated for under-hood environments including transmission control modules
AEC-Q101	Qualified - Meets stress test requirements for automotive electronic components per JESD22-A108

Pinout & Package

IPB45N06S3-16 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab. The three terminals are arranged in standard configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V logic-level signal to fully enhance channel; requires <57 nC total charge for full turn-on
Pin 2 (Drain)	High-side power terminal	Exposed copper tab electrically connected to drain; provides primary thermal path to PCB heatsink
Pin 3 (Source)	Reference node	Common return for gate drive and load current; ties to system ground or low-side switch source

Key Features

Feature	Design Value
OptiMOS™-T2 trench technology	Reduces R_DS(on) × Q_g figure-of-merit by 30% vs. prior generation for improved efficiency in 100–500 kHz switching
100% avalanche tested	Each unit validated for single-pulse ruggedness up to 145 mJ, eliminating need for design margin on inductive kick energy
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free SMT assembly processes without moisture sensitivity handling
Integrated body diode	20 ns t_rr and 25 nC Q_rr enable use in bidirectional current paths without external diode in half-bridge configurations
Green product (RoHS)	Lead-free terminations and halogen-free molding compound meet EU Directive 2011/65/EU and IPC-1752A Class 1

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed switching of 12 V fuel injectors with 2 ms pulse width and 10 Hz repetition rate.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current; operates in linear and saturated regions during PWM commutation.

Use Value: 15.4 mΩ R_DS(on) limits resistive heating to <3 W at 45 A peak, enabling compact heatsinkless layout in space-constrained ECU modules.

Use Scenario: Primary-side switch in 12 V → 48 V bidirectional DC-DC converter for 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier and high-frequency (200 kHz) hard-switched power transistor in phase-shifted full-bridge topology.

Use Value: 145 mJ avalanche energy rating absorbs leakage inductance spikes without clamping circuits, reducing BOM count and improving power density.

Electric Power Steering (EPS) Motor Phase Leg

12 V Battery Disconnect Switch

Use Scenario: Half-bridge leg driving 3-phase BLDC motor in EPS system with peak currents up to 90 A pulsed.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter; conducts freewheeling current via integrated body diode during dead-time intervals.

Use Value: 20 ns t_rr and 1.1 V V_SD minimize reverse recovery losses and conduction drop, improving torque ripple and thermal stability at 175 °C ambient.

Use Scenario: Solid-state replacement for mechanical relay in battery management systems, switching 45 A continuous load during ignition and sleep mode transitions.

IC Role / Device Role / Timing Role: Single-pole, normally-open power switch isolating starter battery from auxiliary loads during cranking events.

Use Value: AEC-Q101 qualification and 175 °C operation ensure reliability across extreme temperature cycles (-40 °C to +125 °C case), eliminating contact wear and bounce issues.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP45N06S3-16	Same die, TO-220-3-1 through-hole package; R_thJC = 2.3 K/W identical, but higher R_thJA (62 K/W)	Better suited for prototyping, low-volume assemblies, or legacy through-hole PCBs where SMT reflow is unavailable	Select when mechanical mounting stability or hand-soldering is required over thermal performance density
IPB80N04S4-02	40 V V_DS, 80 A I_D, 2.0 mΩ R_DS(on); lower voltage rating but higher current and lower on-resistance	Optimized for 12 V-only systems (e.g., ADAS cameras) requiring sub-2 mΩ conduction loss at <40 V bus	Choose only if system V_DS never exceeds 40 V and peak current exceeds 60 A

Compared with IPP45N06S3-16, IPB45N06S3-16 offers superior thermal interface for automated SMT production and reduced board area; versus IPB80N04S4-02, it trades lower R_DS(on) for higher 55 V blocking margin essential in 24 V commercial vehicle applications.

Availability

IPB45N06S3-16 is available at Aetrix Electronics and suitable for automotive engine control units, 48 V DC-DC converters, and electric power steering systems requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB45N06S3-16 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power MOSFET product line, engineered specifically for high-current, high-temperature automotive power stages where avalanche ruggedness and AEC-Q101 compliance are mandatory.

FAQ

Is IPB45N06S3-16 suitable for paralleling multiple devices to increase current capacity?

Yes - its positive temperature coefficient of R_DS(on) (shown in Figure 8) ensures inherent current sharing across parallel units. Designers must match gate drive impedance and PCB layout symmetry to maintain <5% current imbalance at 45 A per device, as verified in Infineon Application Note AN2015-07.

What is the maximum allowable gate resistor value for reliable switching at 200 kHz?

With Q_g = 57 nC and typical driver peak current of 1 A, a 57 Ω gate resistor yields ~57 ns rise time. For 200 kHz operation with 50% duty cycle, keep R_G ≤ 47 Ω to limit switching loss contribution to <15% of total power loss, per thermal simulation in ANPS071E.

Does the 175 °C rating apply to continuous operation or only short-term transients?

The 175 °C maximum junction temperature is rated for continuous operation, confirmed by steady-state thermal testing per JEDEC JESD51-2. Derating curves on page 4 show 45 A continuous current remains valid up to T_C = 100 °C, provided R_thJC ≤ 2.3 K/W is maintained via proper heatsinking.

Can IPB45N06S3-16 replace older OptiMOS™-T1 devices like IPB45N06L3 in existing designs?

Yes - identical pinout, same V_GS(th) range, and improved R_DS(on) (15.4 mΩ vs. 17.5 mΩ) allow direct substitution. However, the lower Crss (430 pF vs. 520 pF) reduces Miller effect, potentially requiring minor gate drive strength adjustment to maintain optimal dV/dt control.

IPB45N06S3-16 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 15.4mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 4V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2980 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 65W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB45N06S3-16 FAQ

1.How can I place an order for IPB45N06S3-16 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB45N06S3-16 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB45N06S3-16 reliable?

The price and inventory of IPB45N06S3-16 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB45N06S3-16 is usually 5 days.

3.What payment methods are accepted for IPB45N06S3-16?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB45N06S3-16 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB45N06S3-16?

IPB45N06S3-16 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB45N06S3-16 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB45N06S3-16?

For technical support, including IPB45N06S3-16 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB45N06S3-16 requirements.

6.How does Aetrix verify that IPB45N06S3-16 is sourced from the original manufacturer or authorized distributors?

All IPB45N06S3-16 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB45N06S3-16 meets industry standards.

7.What is the process for return or replacement of IPB45N06S3-16?

All IPB45N06S3-16 units undergo pre-shipment inspection (PSI). If there is an issue with IPB45N06S3-16, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB45N06S3-16 part is unused and in its original packaging.

Return procedure for IPB45N06S3-16:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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