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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB45N06S409ATMA1

Name: IPB45N06S409ATMA1
Brand: Infineon Technologies
SKU: IPB45N06S409ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB45N06S409ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB45N06S409ATMA1.pdf

Description:: MOSFET N-CH 60V 45A TO263-3

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Product details

Overview

IPB45N06S409ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 45 A continuous drain current at T_C = 25 °C, and 9.2 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature, features 100% single-pulse avalanche testing (97 mJ), and is RoHS-compliant with MSL1 reflow rating.

For engineers reviewing the IPB45N06S409ATMA1 datasheet, IPB45N06S409ATMA1 pinout, IPB45N06S409ATMA1 application, or IPB45N06S409ATMA1 equivalent, key selection criteria include its 2.1 K/W R_thJC, 7.6–9.1 mΩ typical R_DS(on) (SMD version), 36–47 nC total gate charge, 45 A diode forward current capability, and suitability for automotive DC-DC converters, motor control H-bridges, and high-reliability industrial switching.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS drive compatibility, while the integrated body diode supports synchronous rectification and freewheeling with 0.6–1.3 V V_SD at 45 A and 25 °C.

The MOSFET's dynamic parameters-3785 pF C_iss, 930 pF C_oss, and 60 pF C_rss-support fast switching at 100 kHz+ frequencies. Its 15 ns turn-on delay and 5 ns fall time, combined with 45 A pulsed drain current rating, enable high-efficiency operation in hard-switched topologies under thermally constrained conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V automotive battery systems and 24 V industrial rails.
R_DS(on) max	9.2 mΩ at V_GS = 10 V - Enables ≤2.1 W conduction loss at 45 A, reducing heatsink requirements in space-constrained modules.
I_D continuous	45 A at T_C = 25 °C - Sustains full-rated load without derating when mounted on PCB with ≥6 cm² copper area.
E_AS	97 mJ single-pulse avalanche energy - Withstands inductive turn-off transients in motor drives without external snubbers.
R_thJC	2.1 K/W - Allows direct thermal path from die to heatsink, enabling >60 W dissipation with ≤130 °C ΔT.
Q_g	36–47 nC - Determines gate driver current demand (≥3.5 A peak for 10 ns rise time) and switching loss trade-off.
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers while avoiding spurious conduction.

Pinout & Package

IPB45N06S409ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic signal; requires <100 nC Q_gs + Q_gd to fully enhance channel.
Pin 2 (Drain)	High-side power node	Internally connected to exposed copper tab; must be soldered to ≥6 cm² PCB copper for R_thJA = 40 K/W.
Pin 3 (Source)	Reference node / return path	Provides low-inductance source connection; ties to ground or low-side switch in half-bridge configurations.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, and UHAST.
100% avalanche tested	Each unit passes single-pulse E_AS = 97 mJ test at I_D = 22.5 A, ensuring ruggedness in inductive load switching.
MSL1 reflow rating	Suitable for lead-free reflow up to 260 °C peak, eliminating moisture sensitivity concerns during SMT assembly.
OptiMOS®-T2 trench architecture	Delivers 15% lower R_DS(on) × Q_g figure-of-merit vs. prior generation, improving efficiency in 100–500 kHz SMPS.
Integrated body diode	Rated for 45 A continuous forward current and 180 A pulsed, enabling bidirectional current handling in H-bridge motor control.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 200 kHz with zero-voltage switching assist.

Use Value: 9.2 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 15 mΩ parts, increasing system efficiency from 92% to 94.5% at 20 A.

Use Scenario: Half-bridge inverter driving 3-phase BLDC fan in HVAC control module.

IC Role / Device Role / Timing Role: Low-side switch in 20 kHz PWM-controlled phase leg, handling 45 A peak motor current.

Use Value: 175 °C max T_j and 2.1 K/W R_thJC allow sustained operation at 150 °C case temperature without derating.

On-Board Charger (OBC) PFC Stage

Power Distribution Units (PDUs)

Use Scenario: Boost switch in 3.3 kW interleaved PFC front-end for EV charging systems.

IC Role / Device Role / Timing Role: Fast-switching power switch with 15 ns t_d(on) and 5 ns t_f, driven by dedicated gate driver IC.

Use Value: 36–47 nC Q_g enables <100 ns total switching transition, minimizing dead-time losses and THD.

Use Scenario: Solid-state relay replacement in 24 V truck body controller for lighting and solenoid loads.

IC Role / Device Role / Timing Role: High-reliability load switch with integrated avalanche protection for inductive load disconnection.

Use Value: 97 mJ E_AS rating eliminates need for external TVS clamping during 100 ms load dump events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP45N06S4-09	TO-220-3 through-hole package; identical R_DS(on), V_DS, and I_D ratings; higher R_thJA (62 K/W).	Preferred for prototyping, low-volume industrial controls, or where manual assembly and heatsink mounting are used.	Select when board-level reflow is unavailable or mechanical retention via screw-mount heatsink is required.
IPB45N06S408ATMA1	Same PG-TO263-3-2 package; 8.0 mΩ max R_DS(on); 47 nC Q_g; same avalanche rating and temperature range.	Better suited for ultra-high-efficiency 48 V server PSUs where <0.5 W conduction loss margin is critical.	Choose when optimizing for minimum R_DS(on) at cost of slightly higher gate drive energy and price premium.

Compared with IPP45N06S4-09, IPB45N06S409ATMA1 offers superior thermal performance in automated SMT lines due to its 2.1 K/W R_thJC and PCB-integrated cooling; versus IPB45N06S408ATMA1, it trades 1.2 mΩ higher R_DS(on) for lower Q_g and reduced switching loss in mid-frequency motor control.

Availability

IPB45N06S409ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for IPB45N06S409ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS®-T2 power transistor product line, engineered specifically for high-current, high-temperature automotive and industrial switching applications demanding AEC-Q101 reliability and low R_DS(on) × Q_g figures of merit.

FAQ

What is the maximum allowable gate-source voltage for IPB45N06S409ATMA1?

The absolute maximum V_GS is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching transitions, especially in high-dV/dt environments like motor drives.

Does IPB45N06S409ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress oscillation. For 45 A switching at 200 kHz, a 3.5 Ω resistor yields ~10 ns rise time with typical 1 A gate driver output. Lower values (≤2 Ω) increase EMI risk; higher values (>10 Ω) raise switching losses. Layout parasitics must be minimized to avoid unintended LC resonance.

Can IPB45N06S409ATMA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Thermal coupling and gate drive skew must be minimized: use Kelvin source connections, individual gate resistors, and ensure <2 °C inter-device temperature difference at full load. Derate total current by 15% to account for parameter spread in R_DS(on) and V_GS(th).

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode has t_rr = 45 ns and Q_rr = 40 nC at T_j = 25 °C, making it viable for synchronous rectification in 100–300 kHz DC-DC converters. However, soft-recovery behavior is not specified; for critical ZVS designs, external Schottky diodes may be added in anti-parallel for improved recovery control.

IPB45N06S409ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ T2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 4V @ 34µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3785 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB45N06S409ATMA1 FAQ

1.How can I place an order for IPB45N06S409ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB45N06S409ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB45N06S409ATMA1 reliable?

The price and inventory of IPB45N06S409ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB45N06S409ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB45N06S409ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB45N06S409ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB45N06S409ATMA1?

IPB45N06S409ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB45N06S409ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB45N06S409ATMA1?

For technical support, including IPB45N06S409ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB45N06S409ATMA1 requirements.

6.How does Aetrix verify that IPB45N06S409ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB45N06S409ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB45N06S409ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB45N06S409ATMA1?

All IPB45N06S409ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB45N06S409ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB45N06S409ATMA1 part is unused and in its original packaging.

Return procedure for IPB45N06S409ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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