Infineon Technologies IPB45N06S409ATMA2

Overview

IPB45N06S409ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 45 A continuous drain current at T_C = 25 °C, and 9.2 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature, features 100% single-pulse avalanche testing (97 mJ), and is used in automotive DC-DC converters and motor control H-bridges.

For engineers reviewing the IPB45N06S409ATMA2 datasheet, IPB45N06S409ATMA2 pinout, IPB45N06S409ATMA2 application, or IPB45N06S409ATMA2 equivalent, key selection criteria include its 2.1 K/W R_thJC, 7.6–9.1 mΩ typical R_DS(on) (SMD version), 36–47 nC total gate charge, 2911–3785 pF input capacitance, and AEC qualification for under-hood automotive use.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current 12 V/24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS drive compatibility, while the integrated body diode supports synchronous rectification with 0.6–1.3 V forward voltage at 45 A.

The MOSFET's safe operating area (SOA) is characterized for single-pulse operation up to 100 µs, with thermal impedance Z_thJC validated down to 1 µs pulse width. Avalanche ruggedness is specified at I_D = 22.5 A, supporting inductive load switching without external snubbers in engine control units.

Key Specifications

Pinout & Package

IPB45N06S409ATMA2 uses the PG-TO263-3-2 surface-mount package (D²PAK), with drain connected to the exposed metal tab for low-inductance thermal and electrical path. Pin 1 is Gate, Pin 2 is Source, Pin 3 is Drain (tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP45N06S4-09 and IPB45N06S409ATMA1, the IPB45N06S409ATMA2 offers superior reflow compatibility (MSL1) and automotive qualification-critical for production automotive electronics where process consistency and long-term reliability are mandatory.

Availability

IPB45N06S409ATMA2 is available at Aetrix Electronics and suitable for automotive engine control units, 24 V DC-DC converters, and electric power steering motor drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPB45N06S409ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS®-T2 product line, engineered specifically for high-current, high-temperature automotive power switching applications where avalanche ruggedness and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPB45N06S409ATMA2?

The absolute maximum gate-source voltage is ±20 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped between –5 V (to ensure fast turn-off and prevent spurious turn-on) and +10 V (optimal for minimizing R_DS(on) without excessive gate charge). The gate threshold voltage range is 2.0–4.0 V at 34 µA I_D.

Does IPB45N06S409ATMA2 have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic body diode rated for 45 A continuous forward current and 180 A pulsed current. At 25 °C and 45 A, its forward voltage (V_SD) is typically 0.95 V, with a reverse recovery time (t_rr) of 45 ns and reverse recovery charge (Q_rr) of 40 nC under V_R = 30 V, I_F = 45 A, and di_F/dt = 100 A/µs conditions.

How does the thermal resistance R_thJC of 2.1 K/W translate to real-world PCB layout?

R_thJC = 2.1 K/W assumes direct thermal contact between the drain tab and a 6 cm² copper area (70 µm thick, FR4 PCB, vertical orientation in still air). Achieving this requires soldering the entire tab to a solid copper pour with ≥4 thermal vias (0.3 mm diameter) connecting to inner or backside ground planes. Without this, effective R_thJA degrades to 62 K/W.

Is IPB45N06S409ATMA2 suitable for synchronous rectification in a 48 V automotive DC-DC converter?

Yes-it is qualified for 48 V system applications. With 60 V V_DS, 7.6 mΩ typical R_DS(on), and 45 A continuous rating at T_C = 100 °C, it delivers low conduction loss in secondary-side synchronous rectifiers. Its 36–47 nC Q_g supports efficient gate drive at 200–500 kHz switching frequencies common in modern 48 V architectures.