Infineon Technologies IPB45N06S4L08ATMA1

Overview

IPB45N06S4L08ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO263-3-2 package, rated for 60 V V_DS, 45 A continuous drain current at T_C = 25°C, and 7.9 mΩ max R_DS(on) at V_GS = 10 V. It delivers robust avalanche performance (97 mJ single-pulse E_AS) and operates up to 175°C junction temperature, targeting automotive DC-DC converters and motor control stages.

For engineers reviewing the IPB45N06S4L08ATMA1 datasheet, IPB45N06S4L08ATMA1 pinout, IPB45N06S4L08ATMA1 application, or IPB45N06S4L08ATMA1 equivalent, key selection criteria include its 2.1 K/W R_thJC, 100% avalanche-tested reliability, RoHS-compliant green packaging, and validated performance under 175°C thermal stress and 260°C peak reflow.

Technical Context

This OptiMOS®-T2 power transistor uses trench-gate silicon technology optimized for low conduction and switching losses in high-efficiency 12 V/24 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables direct drive from standard microcontroller GPIOs, while its 49–64 nC total gate charge supports fast switching with moderate gate driver strength.

The device integrates a co-packaged body diode with 0.6–1.3 V forward voltage at 45 A and 33 ns reverse recovery time, enabling synchronous rectification and freewheeling in half-bridge topologies without external diodes. Thermal design is anchored by a 2.1 K/W junction-to-case resistance and MSL1 rating for lead-free assembly.

Key Specifications

Pinout & Package

IPB45N06S4L08ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal management. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Compared with IPP45N06S4L-08 and IPI45N06S4L-08, IPB45N06S4L08ATMA1 offers superior thermal performance in automated SMT lines due to its D²PAK package's lower R_thJC and optimized solder joint reliability, making it the preferred choice for high-volume automotive power modules.

Availability

IPB45N06S4L08ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and onboard charger auxiliary supplies requiring stable component supply across extended production lifecycles.

Supply support for IPB45N06S4L08ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS®-T2 family, engineered specifically for high-efficiency, high-reliability 12 V/24 V/48 V automotive power conversion and motor control applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPB45N06S4L08ATMA1?

The absolute maximum gate-source voltage is ±16 V. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V for optimal R_DS(on) and 12 V maximum to avoid accelerated wear, especially under high-temperature conditions.

Does IPB45N06S4L08ATMA1 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with 45 A continuous forward current rating. At 25°C and 45 A, V_SD ranges from 0.6 V to 1.3 V, and t_rr is 33 ns under 30 V reverse bias and 100 A/µs di/dt. This enables efficient freewheeling in half-bridge configurations without external diodes.

How does the thermal resistance of IPB45N06S4L08ATMA1 impact heatsink design?

With R_thJC = 2.1 K/W, the junction-to-heatsink path depends almost entirely on PCB copper area and thermal interface quality. Using a 6 cm² copper pour yields R_thJA ≈ 40 K/W; adding a bolted heatsink reduces total R_thJA to ~15 K/W, enabling 45 A operation at T_C ≤ 100°C without active cooling.

Is IPB45N06S4L08ATMA1 suitable for use in safety-critical automotive systems like airbag controllers?

No - while AEC-Q101 qualified, this MOSFET is not ASIL-certified nor approved for life-support or safety-critical functions per Infineon's disclaimer. It is intended for powertrain, chassis, and body applications where failure does not directly endanger human life, such as EPS or lighting drivers.