Infineon Technologies IPB47N10S33ATMA1

Overview

IPB47N10S33ATMA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V V_DS, 47 A continuous drain current at T_C = 25°C, and 33 mΩ R_DS(on) at V_GS = 10 V. It operates up to 175°C junction temperature, features avalanche rating (E_AS = 400 mJ), and is optimized for high-efficiency DC-DC converters and motor control inverters.

For engineers reviewing the IPB47N10S33ATMA1 datasheet, IPB47N10S33ATMA1 pinout, IPB47N10S33ATMA1 application, or IPB47N10S33ATMA1 equivalent, key selection criteria include its 6 kV/µs dv/dt rating, low gate charge (Q_g = 70–105 nC), robust reverse diode (V_SD = 1.1–1.5 V @ I_F = 94 A), and thermal resistance R_thJC = 0.85 K/W - critical for thermally constrained industrial switching designs.

Technical Context

This MOSFET employs planar SIPMOS technology with optimized cell layout for low conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2.1–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while the 2000–2500 pF input capacitance (C_iss) and 190–240 pF reverse transfer capacitance (C_rss) support stable high-frequency operation up to 100 kHz in hard-switched topologies.

The integrated body diode exhibits fast recovery (t_rr = 100–150 ns, Q_rr = 400–600 nC) and low forward voltage (V_SD ≤ 1.5 V), enabling efficient freewheeling in synchronous rectification and half-bridge configurations without external Schottky supplementation.

Key Specifications

Pinout & Package

IPB47N10S33ATMA1 uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in a single-row configuration compatible with automated assembly and high-current PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP48N10F7 and IRF540NPBF, IPB47N10S33ATMA1 uniquely combines D²PAK SMT compatibility, guaranteed avalanche ruggedness, and industry-leading 0.85 K/W thermal resistance - making it optimal for high-reliability, space-constrained industrial and renewable energy systems where thermal and surge resilience are non-negotiable.

Availability

IPB47N10S33ATMA1 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, and solar microinverters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for IPB47N10S33ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor leader specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure supporting industrial and automotive-grade reliability standards.

This device belongs to Infineon's SIPMOS™ power transistor product line, engineered specifically for high-current, high-temperature switching applications in industrial automation, renewable energy, and e-mobility systems where ruggedness and thermal performance are critical.

FAQ

What is the maximum allowable gate-source voltage for IPB47N10S33ATMA1?

The absolute maximum V_GS is ±20 V per datasheet specifications. Operation above +20 V risks irreversible gate oxide damage, while negative voltage beyond –20 V may cause parasitic turn-on. Recommended drive is 10 V for full enhancement with margin; gate resistors should limit dV/dt to avoid oscillation during switching transitions.

Does IPB47N10S33ATMA1 require a gate driver IC, or can it be driven directly from a microcontroller?

A dedicated gate driver IC is required. With Q_g up to 105 nC and typical gate resistance of ~1.5 Ω, driving directly from a 3.3 V or 5 V MCU GPIO would result in excessively slow switching (>1 µs rise/fall), causing high dynamic losses and thermal runaway. A 10 V capable driver with ≥2 A peak sink/source capability is mandatory for reliable 100 kHz+ operation.

How does the body diode performance compare to discrete Schottky diodes in high-frequency rectification?

The integrated body diode has V_SD = 1.1–1.5 V and t_rr = 100–150 ns, outperforming standard silicon diodes but not matching ultra-low-V_F Schottkys (<0.5 V). However, its monolithic integration eliminates bond-wire inductance and thermal mismatch, enabling more predictable recovery behavior in synchronous rectifiers - especially valuable in LLC and phase-shifted topologies where timing precision matters.

Is IPB47N10S33ATMA1 suitable for use in automotive applications?

While qualified to AEC-Q101 stress test conditions in some variants, the IPB47N10S33ATMA1 part number itself is not AEC-Q101 certified per Infineon's official documentation. It is approved for industrial and renewable energy use. For automotive applications (e.g., ADAS power supplies or OBCs), designers must select the automotive-grade variant (e.g., IPB47N10S3-12ATMA1) with full PPAP documentation and extended temperature validation.