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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB47N10SL26ATMA1

Name: IPB47N10SL26ATMA1
Brand: Infineon Technologies
SKU: IPB47N10SL26ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB47N10SL26ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB47N10SL26ATMA1.pdf

Description:: MOSFET N-CH 100V 47A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,729

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Product details

Overview

IPB47N10SL26ATMA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ power MOSFET in PG-TO263-3-2 (D²PAK) package, rated for 100 V V_DS, 47 A continuous drain current at T_C = 25 °C, and 26 mΩ R_DS(on) at V_GS = 10 V. It supports high-reliability motor control, DC-DC conversion, and industrial switching with 175 °C max operating temperature, avalanche rating (E_AS = 400 mJ), and dv/dt ruggedness (6 kV/µs).

For engineers reviewing the IPB47N10SL26ATMA1 datasheet, IPB47N10SL26ATMA1 pinout, IPB47N10SL26ATMA1 application, or IPB47N10SL26ATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V (typ. 25 mΩ), integrated avalanche energy capability, and thermal resistance (R_thJC = 0.85 K/W) for high-power density designs.

Technical Context

This MOSFET employs a trench-gate SIPMOS™ structure optimized for low conduction loss and fast switching. Its logic-level gate enables direct drive from microcontrollers or gate drivers without level-shifting, while its 175 °C rated junction supports operation in sealed enclosures or high-ambient environments like industrial motor drives.

The device features robust unclamped inductive switching (UIS) performance (E_AS = 400 mJ at T_j = 25 °C) and controlled reverse diode recovery (Q_rr = 340–510 nC, t_rr = 80–120 ns), reducing voltage overshoot and EMI in hard-switched topologies such as synchronous buck converters and H-bridge inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V bus systems and industrial 24–96 V DC applications.
R_DS(on) @ V_GS = 10 V	18–26 mΩ - Enables <1.2 W conduction loss at 33 A, supporting thermally constrained PCB layouts.
R_DS(on) @ V_GS = 4.5 V	25–40 mΩ - Ensures usable on-resistance with 3.3 V or 5 V logic-level drive, eliminating external gate drivers.
I_D (continuous)	47 A @ T_C = 25 °C - Supports high-current loads such as BLDC motor phases or high-side switches in power supplies.
E_AS	400 mJ - Withstands single-pulse inductive energy without failure, critical for relay replacement and solenoid driving.
dv/dt rating	6 kV/µs - Resists false turn-on during fast voltage transients in noisy industrial environments.
Q_g	90–135 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak gate drivers.

Pinout & Package

IPB47N10SL26ATMA1 uses the PG-TO263-3-2 (D²PAK) surface-mount package with exposed drain pad for low thermal resistance (R_thJC = 0.85 K/W). The package is lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts logic-level voltage (0–10 V); threshold 1.2–2.0 V enables direct MCU interface.
2 (Drain)	High-side switch node	Internally connected to large copper drain pad; primary thermal path to PCB heatsink area.
3 (Source)	Power return reference	Provides low-inductance source connection; used for current sensing and gate drive referencing.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V ensures full enhancement with 3.3 V or 5 V controllers, reducing BOM count.
Avalanche-rated	Rated for repetitive UIS events up to E_AS = 400 mJ, enabling reliable operation without snubbers in inductive switching.
High-temperature operation	175 °C maximum junction temperature allows use in sealed enclosures or high-ambient industrial settings.
dv/dt ruggedness	6 kV/µs immunity prevents spurious turn-on during fast voltage transitions in motor drive half-bridges.
Low Q_gd/Q_g ratio	Q_gd = 16–24 nC / Q_g = 90–135 nC improves switching controllability and reduces Miller-induced oscillation risk.

Applications

Motor Control

DC-DC Conversion

Use Scenario: Driving 3-phase BLDC motors in industrial fans or pumps with 48 V nominal bus.

IC Role / Device Role / Timing Role: High-side and low-side switch in 6-step commutation, handling 40+ A peak phase current.

Use Value: Low R_DS(on) at 4.5 V minimizes conduction loss; avalanche rating absorbs back-EMF spikes during PWM transitions.

Use Scenario: Synchronous rectifier in isolated 48 V to 12 V flyback or forward converter for telecom power systems.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to improve efficiency above 10 A load.

Use Value: Integrated body diode with low V_SD (1.1–1.5 V) and fast t_rr (80–120 ns) reduces reverse recovery loss and EMI.

Industrial Power Switching

Solenoid & Relay Replacement

Use Scenario: Solid-state output stage in PLC digital output modules switching 24–48 V DC loads.

IC Role / Device Role / Timing Role: High-side load switch with overcurrent and thermal protection via external monitoring.

Use Value: 175 °C T_jmax and robust dv/dt rating ensure reliability in electrically noisy cabinet environments.

Use Scenario: Replacing electromechanical relays in HVAC actuators and valve control circuits.

IC Role / Device Role / Timing Role: Unclamped inductive switch managing 100–200 mJ stored energy in solenoid coils.

Use Value: Guaranteed E_AS = 400 mJ eliminates need for external clamping diodes or RC snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP48N10F7	R_DS(on) = 18 mΩ @ 10 V, but V_GS(th) = 2.0–4.0 V - not logic-level at 3.3 V.	Requires 5 V gate drive; unsuitable for 3.3 V MCU direct drive.	Select only if system uses 5 V logic and higher V_GS margin is acceptable.
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V, V_GS(th) = 2.0–4.0 V, no avalanche rating.	Lacks UIS capability and logic-level compatibility; higher conduction loss.	Use only in cost-sensitive, low-reliability, non-inductive applications.

Compared with STP48N10F7 and IRF540NPBF, IPB47N10SL26ATMA1 uniquely combines true logic-level drive (1.2–2.0 V V_GS(th)), 26 mΩ R_DS(on), and certified avalanche energy - making it optimal for compact, high-efficiency, and high-reliability industrial switching where gate drive simplicity and ruggedness are mandatory.

Availability

IPB47N10SL26ATMA1 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and industrial power switching requiring stable component supply across long-lifecycle embedded programs.

Supply support for IPB47N10SL26ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q standards.

This device belongs to the SIPMOS™ logic-level power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial automation, motor drives, and power supplies where thermal resilience and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current I_D is 33 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D²PAK package and must be validated against actual PCB layout and heatsinking in the target application.

Does IPB47N10SL26ATMA1 have a qualified avalanche rating?

Yes - it is fully rated for unclamped inductive switching with E_AS = 400 mJ (single pulse, I_D = 47 A, V_DD = 25 V, R_GS = 25 Ω) at T_j = 25 °C. This rating is tested and guaranteed per Infineon's qualification standards, not estimated.

Can this MOSFET be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage V_GS(th) ranges from 1.2 V to 2.0 V, and R_DS(on) remains low (25–40 mΩ) at V_GS = 4.5 V. A 3.3 V GPIO can fully enhance the device, though gate resistor selection must limit peak current to avoid MCU pin stress.

What is the thermal resistance from junction to case (R_thJC)?

R_thJC is 0.85 K/W, measured under standard test conditions (JEDEC JESD51-14). This value assumes proper soldering of the exposed drain pad to ≥6 cm² of 70 µm copper on FR4 PCB, vertical orientation, no forced airflow.

IPB47N10SL26ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 175W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB47N10SL26ATMA1 FAQ

1.How can I place an order for IPB47N10SL26ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB47N10SL26ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB47N10SL26ATMA1 reliable?

The price and inventory of IPB47N10SL26ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB47N10SL26ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB47N10SL26ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB47N10SL26ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB47N10SL26ATMA1?

IPB47N10SL26ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB47N10SL26ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB47N10SL26ATMA1?

For technical support, including IPB47N10SL26ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB47N10SL26ATMA1 requirements.

6.How does Aetrix verify that IPB47N10SL26ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB47N10SL26ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB47N10SL26ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB47N10SL26ATMA1?

All IPB47N10SL26ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB47N10SL26ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB47N10SL26ATMA1 part is unused and in its original packaging.

Return procedure for IPB47N10SL26ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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