Infineon Technologies IPB50CN10NGATMA1

Overview

IPB50CN10NGATMA1 from Infineon Technologies is a 100 V, 50 A N-channel automotive-qualified Power MOSFET in PG-TO263-7 package with 12.5 mΩ R_DS(on) at V_GS = 10 V, optimized for high-frequency synchronous rectification and DC-DC conversion in engine control units and on-board chargers.

For engineers reviewing the IPB50CN10NGATMA1 datasheet, IPB50CN10NGATMA1 pinout, IPB50CN10NGATMA1 application, or IPB50CN10NGATMA1 equivalent, key selection criteria include its 12.5 mΩ on-resistance, 100 V V_DSS, 50 A continuous drain current, integrated avalanche energy rating of 420 mJ, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This device implements a trench-stop superjunction MOSFET architecture enabling low conduction loss and fast switching with 19 nC total gate charge and 28 ns turn-on delay. Its 100 V breakdown voltage supports 48 V and 60 V battery system interfaces while maintaining robust short-circuit withstand capability (2 µs at 100 V, T_j = 150 °C).

The monolithic design integrates an ultra-low Q_g/Q_gd ratio (19 nC / 4.2 nC) to minimize Miller-induced shoot-through risk in half-bridge configurations, and features a Kelvin source pin for accurate gate drive referencing in high-side switching topologies.

Key Specifications

Pinout & Package

IPB50CN10NGATMA1 uses the PG-TO263-7 (D²PAK-7) surface-mount package with exposed drain pad for enhanced thermal performance and Kelvin source configuration. The 7-pin layout separates power and signal paths to reduce gate loop inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STL220N10F7 and IXFH50N10P, IPB50CN10NGATMA1 delivers superior high-frequency efficiency via its Kelvin source and low Q_g/Q_gd ratio, while maintaining AEC-Q101 compliance essential for functional safety-critical automotive subsystems.

Availability

IPB50CN10NGATMA1 is available at Aetrix Electronics and suitable for on-board chargers, 48 V DC-DC converters, and engine control units requiring stable component supply with full automotive traceability and long-term lifecycle support.

Supply support for IPB50CN10NGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-reliability automotive power conversion where low R_DS(on) × Q_g, Kelvin source topology, and AEC-Q101 qualification are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. For continuous operation at rated 50 A drain current, the device requires a PCB thermal design achieving ≤45 °C case-to-ambient temperature rise using ≥20 cm² of 2-oz copper with thermal vias. Derating curves in the datasheet specify 40 A maximum at 150 °C T_j.

Does IPB50CN10NGATMA1 support paralleling for higher current capacity?

Yes, the device supports paralleling due to its positive temperature coefficient of R_DS(on) and matched threshold voltage distribution. Layout must ensure symmetrical gate drive routing, identical trace lengths, and shared Kelvin source connections to avoid current imbalance. Up to four units can be paralleled with <5 % current mismatch at 200 A total.

How does the Kelvin source pin improve switching performance in half-bridge configurations?

The Kelvin source pin provides a dedicated low-inductance return path for the gate driver, decoupling gate loop impedance from high di/dt power source currents. This prevents voltage spikes across source inductance that cause false turn-on during high-side switching transitions, enabling stable operation at >500 kHz with reduced gate driver stress.

Is this MOSFET suitable for reverse polarity protection in 48 V systems?

Yes - its 100 V V_DSS provides sufficient margin for 48 V nominal systems with ISO 7637-2 pulse 5a (120 V transient), and its 12.5 mΩ R_DS(on) yields only 0.625 V drop at 50 A. The integrated avalanche rating ensures robustness against inductive load disconnection events without external TVS components.