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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB50N10S3L16ATMA1

Name: IPB50N10S3L16ATMA1
Brand: Infineon Technologies
SKU: IPB50N10S3L16ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB50N10S3L16ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB50N10S3L16ATMA1.pdf

Description:: MOSFET N-CH 100V 50A TO263-3

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Product details

Overview

IPB50N10S3L16ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 100 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 15.4 mΩ max R_DS(on) at V_GS = 10 V. It delivers robust avalanche performance (330 mJ single-pulse), operates up to 175 °C junction temperature, and is used in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB50N10S3L16ATMA1 datasheet, IPB50N10S3L16ATMA1 pinout, IPB50N10S3L16ATMA1 application, or IPB50N10S3L16ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V/10 V, thermal resistance (R_thJC = 1.5 K/W), avalanche energy rating, gate charge profile (Q_g = 49–64 nC), and AEC-Q101 qualification status.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in high-current 12 V/24 V automotive systems. Its gate threshold voltage (1.2–2.4 V) enables compatibility with standard 3.3 V/5 V logic-level drivers while maintaining robust noise immunity via tight V_GS(th) distribution.

The MOSFET integrates a fast-recovery body diode (t_rr = 80 ns, Q_rr = 185 nC) and supports hard-switched topologies requiring high dV/dt immunity and 100% unclamped inductive switching (UIS) validation. Thermal design leverages low R_thJC and MSL1 reflow capability up to 260 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 24 V automotive battery systems with 4× safety margin against load-dump transients.
R_DS(on) max @ V_GS = 10 V	15.4 mΩ - Enables ≤7.7 W conduction loss at 50 A, critical for thermally constrained SMD layouts.
I_D continuous @ T_C = 25 °C	50 A - Matches peak current demands of 1–2 kW traction inverters and starter-generator modules.
E_AS (single pulse)	330 mJ - Guarantees reliable operation under worst-case inductive turn-off events without derating.
R_thJC	1.5 K/W - Allows direct heatsink mounting for compact thermal management in space-constrained ECUs.
Q_g total	49–64 nC - Determines gate driver power requirement (~1.3 mW avg. at 100 kHz, V_GS swing = 10 V).
t_r/t_f	5 ns / 5 ns - Supports >500 kHz switching in resonant LLC and phase-shifted full-bridge converters.
V_GS(th)	1.2–2.4 V - Ensures turn-on with industry-standard 3.3 V microcontrollers while avoiding false triggering.

Pinout & Package

IPB50N10S3L16ATMA1 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab for PCB thermal relief. The package features gull-wing leads and is MSL1 rated for lead-free reflow up to 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Connected to PCB ground plane; carries full load current and must be routed with ≥2 oz copper and thermal vias.
Pin 2 (Gate)	Control input for channel modulation	High-impedance node requiring short, low-inductance trace to gate driver; sensitive to EMI coupling.
Drain tab (exposed pad)	Main power output terminal	Electrically and thermally connected to drain; requires solder mask defined thermal pad and ≥6 cm² copper area per Infineon layout guidelines.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood applications including engine control, transmission, and ADAS power stages.
175 °C maximum operating temperature	Enables placement in high-ambient zones (e.g., near exhaust manifolds or inverters) without thermal throttling.
100 % UIS tested	Each unit undergoes unclamped inductive switching stress to ensure field reliability in motor drive fault conditions.
Low Crss (63–95 pF)	Reduces Miller-induced shoot-through risk in half-bridge configurations, improving system efficiency at high dV/dt.
Optimized body diode Q_rr	185 nC reverse recovery charge minimizes commutation losses and EMI in synchronous rectification topologies.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: 12 V to 48 V bidirectional buck-boost conversion in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side switch handling 50 A continuous current with <5 ns switching transitions.

Use Value: Low R_DS(on) and 1.5 K/W R_thJC enable >96 % peak efficiency and eliminate need for forced-air cooling.

Use Scenario: Three-phase inverter driving 300–500 W brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switching element in 20 kHz PWM-controlled H-bridge with integrated freewheeling diode.

Use Value: 80 ns t_rr and 185 nC Q_rr reduce cross-conduction losses and EMI during dead-time commutation.

Onboard Charger (OBC) PFC Stage

12 V Battery Backup Systems

Use Scenario: Boost PFC switch in 3.3 kW single-phase OBC for Level 2 EV charging.

IC Role / Device Role / Timing Role: Fast-switching MOSFET operating at 65–100 kHz with hard-switched ZVS transition support.

Use Value: 330 mJ E_AS withstands line surge events; 49–64 nC Q_g allows use of cost-effective 2 A gate drivers.

Use Scenario: Load switch isolating auxiliary 12 V rail during cold-cranking or start-stop cycles.

IC Role / Device Role / Timing Role: High-current electronic fuse with controlled turn-on slew rate and overcurrent shutdown response.

Use Value: AEC-Q101 qualification ensures functional safety compliance; 175 °C rating supports under-hood mounting near battery terminals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP50N10S3L-16	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (no PCB copper area benefit)	Limited to lower-power, non-automotive industrial controls where manual assembly and natural convection suffice	Select when board-level reflow is unavailable or mechanical retention via screw mount is required
STL120N10F7	100 V, 120 A, 6.5 mΩ R_DS(on); higher current rating but larger footprint and no AEC-Q101 certification	Suitable for non-automotive 48 V server PSUs or telecom rectifiers where qualification is not mandated	Choose only if higher current headroom and lower R_DS(on) outweigh automotive compliance and thermal density requirements

Compared with IPP50N10S3L-16 and STL120N10F7, IPB50N10S3L16ATMA1 uniquely balances AEC-Q101 compliance, SMD thermal performance (R_thJC = 1.5 K/W), and optimized gate charge for automotive-grade 50 A switching-making it irreplaceable in space- and reliability-constrained ECU designs.

Availability

IPB50N10S3L16ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering modules, and onboard charger PFC stages requiring stable component supply across extended product lifecycles.

Supply support for IPB50N10S3L16ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T family, engineered specifically for high-efficiency, high-reliability switching in 12 V/24 V/48 V automotive power systems-including engine control units, ADAS actuators, and hybrid vehicle energy conversion.

FAQ

What is the maximum allowable gate-source voltage for IPB50N10S3L16ATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable 10 V drive, a gate driver with tight regulation (±0.5 V tolerance) and transient clamping (e.g., Zener diode to source) is recommended.

Does IPB50N10S3L16ATMA1 require external gate resistors in automotive applications?

Yes - a series gate resistor (typically 2.2–10 Ω) is required to dampen ringing caused by PCB trace inductance and prevent spurious turn-on due to dV/dt coupling. Values are selected based on desired switching speed, EMI limits, and driver capability; Infineon's AN2015-05 provides layout-specific guidance.

Can IPB50N10S3L16ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (α = 0.56 %/°C) enables inherent current sharing. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Derating total current by 15 % is advised for thermal margin in high-ambient environments.

Is the drain tab electrically isolated from the package backside metal in PG-TO263-3-2?

No - the exposed drain tab is electrically connected to the MOSFET's drain terminal and must be soldered to a dedicated drain copper pour. It is not isolated; using it as a heatsink without electrical isolation requires insulating thermal interface material or a dielectric heatsink mounting kit.

IPB50N10S3L16ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB50N10S3L16ATMA1 FAQ

1.How can I place an order for IPB50N10S3L16ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB50N10S3L16ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB50N10S3L16ATMA1 reliable?

The price and inventory of IPB50N10S3L16ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB50N10S3L16ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB50N10S3L16ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB50N10S3L16ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB50N10S3L16ATMA1?

IPB50N10S3L16ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB50N10S3L16ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB50N10S3L16ATMA1?

For technical support, including IPB50N10S3L16ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB50N10S3L16ATMA1 requirements.

6.How does Aetrix verify that IPB50N10S3L16ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB50N10S3L16ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB50N10S3L16ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB50N10S3L16ATMA1?

All IPB50N10S3L16ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB50N10S3L16ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB50N10S3L16ATMA1 part is unused and in its original packaging.

Return procedure for IPB50N10S3L16ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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