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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB50N12S3L15ATMA1

Name: IPB50N12S3L15ATMA1
Brand: Infineon Technologies
SKU: IPB50N12S3L15ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB50N12S3L15ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB50N12S3L15ATMA1.pdf

Description:: MOSFET N-CHANNEL_100+

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB50N12S3L15ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO263-3-2 package, rated for 120 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 15.4 mΩ max R_DS(on) at V_GS = 10 V. It delivers robust avalanche performance (330 mJ single-pulse E_AS) and operates up to 175 °C junction temperature, targeting high-reliability automotive power switching in engine control units and DC-DC converters.

For engineers reviewing the IPB50N12S3L15ATMA1 datasheet, IPB50N12S3L15ATMA1 pinout, IPB50N12S3L15ATMA1 application, or IPB50N12S3L15ATMA1 equivalent, key selection criteria include its 120 V breakdown voltage, low 15.4 mΩ on-resistance at 10 V gate drive, AEC-Q101 qualification, 175 °C operation, and TO263 surface-mount thermal performance with 1.5 K/W R_thJC.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (1.2–2.4 V) enables compatibility with standard 3.3 V/5 V logic-level drivers while maintaining noise immunity via controlled V_GS(th) spread.

The MOSFET integrates a fast, low-loss body diode (t_rr = 80 ns, Q_rr = 185 nC) and supports hard-switched topologies requiring rugged unclamped inductive switching capability-validated by 100% single-pulse avalanche testing at I_D = 25 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Withstands peak transients in 12 V automotive battery systems including load dump (up to 40 V) and ISO 7637-2 pulses.
R_DS(on) max	15.4 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 50 A, reducing heatsink requirements in space-constrained ECUs.
I_D cont	50 A @ T_C = 25 °C - Supports high-current motor drivers and solenoid controls without derating at board-level ambient.
E_AS	330 mJ - Guarantees reliable operation under inductive turn-off stress in fuel injector or valve actuator circuits.
T_j max	+175 °C - Meets under-hood thermal requirements for engine bay-mounted power stages per AEC-Q101 stress test conditions.
R_thJC	1.5 K/W - Enables direct thermal coupling to PCB copper pour or heatsink, critical for SMD power delivery in compact modules.
Q_g typ	51 nC - Determines gate driver strength requirement; compatible with common automotive gate drivers (e.g., 1 A peak output).

Pinout & Package

IPB50N12S3L15ATMA1 is housed in PG-TO263-3-2 (D²PAK), a surface-mount power package with isolated drain tab for PCB thermal management. The three terminals are arranged linearly: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; low 51 nC total gate charge enables fast switching with minimal driver loss.
Pin 2 (Drain)	High-side power node	Exposed copper tab - must be soldered to ≥6 cm² PCB copper area for thermal compliance (R_thJA = 40 K/W).
Pin 3 (Source)	Return path / reference	Common return for gate drive and load current; ties to low-impedance ground plane to minimize switching noise.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests per Rev G standards.
100% avalanche tested	Each unit passes single-pulse E_AS = 330 mJ test - eliminates field failure risk in inductive load switching.
Green product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU and automotive ELV requirements.
MSL1 reflow rating	Suitable for standard Pb-free reflow profiles up to 260 °C peak - no moisture sensitivity handling required.
Low Q_gd/Q_gs ratio	Typical 8–12 nC / 11–14 nC - improves Miller immunity and reduces switching instability in high-dV/dt environments.

Applications

Engine Control Unit (ECU) Power Stage

Fuel Injector Driver

Use Scenario: High-side switching of 12 V solenoid loads in gasoline/diesel engine management systems.

IC Role / Device Role / Timing Role: Main power switch controlling injection pulse width with precise 50 A peak current delivery.

Use Value: 175 °C operation ensures reliability near hot engine blocks; 330 mJ avalanche rating absorbs back-EMF without snubbers.

Use Scenario: Low-inductance, high-speed actuation of piezoelectric or electromagnetic fuel injectors.

IC Role / Device Role / Timing Role: Fast-turning power switch enabling sub-millisecond injection timing resolution.

Use Value: 80 ns reverse recovery time and 185 nC Q_rr minimize switching loss and diode commutation delay during PWM cycles.

Automotive DC-DC Converter Primary Switch

Electric Power Steering (EPS) Motor Phase Leg

Use Scenario: Primary-side synchronous rectification in 12 V–48 V bidirectional DC-DC converters for mild hybrid systems.

IC Role / Device Role / Timing Role: High-efficiency 120 V primary switch operating at 100–200 kHz with low R_DS(on) and Q_g.

Use Value: 15.4 mΩ R_DS(on) at 10 V drive reduces conduction loss; 51 nC Q_g enables efficient gate driving at high frequency.

Use Scenario: Half-bridge phase leg in 12 V EPS motor inverters delivering up to 50 A RMS current.

IC Role / Device Role / Timing Role: Robust N-channel switch handling regenerative braking energy and PWM modulation.

Use Value: 1.5 K/W R_thJC allows direct thermal interface to aluminum heatsink; AEC-Q101 ensures functional safety compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP50N12S3L-15	Same die, TO-220-3-1 through-hole package; higher R_thJA (62 K/W) and no exposed drain tab.	Better suited for prototyping or low-volume assemblies where manual soldering or heatsink clamping is preferred.	Select when mechanical mounting flexibility outweighs thermal performance needs.
IPI50N12S3L-15	Same die, TO-262-3-1 package; intermediate thermal resistance (R_thJC ≈ 1.8 K/W) and leaded SMD footprint.	Offers compromise between TO-220 ease-of-use and TO-263 thermal efficiency for mid-power modules.	Choose for automated assembly with moderate thermal demands and legacy board layout compatibility.

Compared with IPP50N12S3L-15 and IPI50N12S3L-15, IPB50N12S3L15ATMA1 provides superior thermal performance (1.5 K/W vs. ≥1.8 K/W) and lower system-level EMI due to optimized SMD layout, making it optimal for high-density, high-reliability automotive power modules.

Availability

IPB50N12S3L15ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, fuel injector drivers, and electric power steering systems requiring stable component supply and full AEC-Q101 traceability.

Supply support for IPB50N12S3L15ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T family-designed specifically for high-efficiency, high-reliability 12 V automotive power switching, emphasizing ruggedness, thermal performance, and AEC-Q101 compliance.

FAQ

Is IPB50N12S3L15ATMA1 pin-compatible with IPP50N12S3L-15?

No. IPB50N12S3L15ATMA1 uses PG-TO263-3-2 (D²PAK) with drain-tab-down SMD mounting, while IPP50N12S3L-15 uses PG-TO220-3-1 with through-hole leads and isolated tab. Footprint, thermal interface, and assembly process differ fundamentally.

What is the maximum gate-source voltage rating?

The absolute maximum V_GS is ±20 V. Operation beyond ±16 V risks permanent gate oxide damage. For reliable 12 V automotive systems, gate drive should be clamped to +10 V / –5 V using discrete Zener or integrated driver protection.

Does this MOSFET require external gate resistors for automotive PWM operation?

Yes. A series gate resistor (typically 5–22 Ω) is required to damp ringing, limit peak gate current, and control dV/dt during switching. Values depend on driver capability and layout parasitics-refer to Infineon's AN2015-09 for recommended design practices.

Can IPB50N12S3L15ATMA1 replace older OptiMOS™ 2nd generation parts?

Yes, with validation. It offers lower R_DS(on) (15.4 mΩ vs. ~20 mΩ), improved E_AS, and tighter V_GS(th) distribution versus predecessors like IPB50N12S2L-15. Layout and drive circuit changes may be needed due to higher Q_g and faster switching.

IPB50N12S3L15ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15.7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB50N12S3L15ATMA1 FAQ

1.How can I place an order for IPB50N12S3L15ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB50N12S3L15ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB50N12S3L15ATMA1 reliable?

The price and inventory of IPB50N12S3L15ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB50N12S3L15ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB50N12S3L15ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB50N12S3L15ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB50N12S3L15ATMA1?

IPB50N12S3L15ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB50N12S3L15ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB50N12S3L15ATMA1?

For technical support, including IPB50N12S3L15ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB50N12S3L15ATMA1 requirements.

6.How does Aetrix verify that IPB50N12S3L15ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB50N12S3L15ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB50N12S3L15ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB50N12S3L15ATMA1?

All IPB50N12S3L15ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB50N12S3L15ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB50N12S3L15ATMA1 part is unused and in its original packaging.

Return procedure for IPB50N12S3L15ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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