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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB50R199CPATMA1

Name: IPB50R199CPATMA1
Brand: Infineon Technologies
SKU: IPB50R199CPATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB50R199CPATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB50R199CPATMA1.pdf

Description:: MOSFET N-CH 550V 17A TO263-3

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Product details

Overview

IPB50R199CPATMA1 from Infineon Technologies is a 500 V, 199 mΩ silicon N-channel CoolMOS™ C7 power MOSFET in PG-TO263-3 (D²PAK) package, rated for 14 A continuous drain current at T_C = 25 °C and optimized for high-efficiency SMPS in server, telecom, and industrial AC-DC converters.

For engineers reviewing the IPB50R199CPATMA1 datasheet, IPB50R199CPATMA1 pinout, IPB50R199CPATMA1 application, or IPB50R199CPATMA1 equivalent, key selection criteria include R_DS(on) at V_GS = 10 V, gate charge (Q_G = 32 nC), E_oss = 32 µJ at 400 V, thermal resistance R_thJC = 0.8 K/W, and avalanche ruggedness rating of 100 mJ single-pulse.

Technical Context

This device implements Infineon's 7th-generation superjunction MOSFET architecture with field-proven charge compensation technology, enabling reduced conduction and switching losses simultaneously. Its optimized gate oxide thickness and cell pitch deliver lower Q_G/Q_GD ratio (32 nC / 8.5 nC) and improved dV/dt immunity.

The MOSFET supports hard-switched and resonant topologies including LLC and PFC stages, with specified t_on = 25 ns, t_off = 42 ns, and reverse recovery charge Q_rr = 120 nC at I_F = 7 A, V_DD = 400 V, and di/dt = 100 A/µs - critical for ZVS/ZCS design validation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - maximum blocking voltage for primary-side switching in 380–400 V DC bus applications
R_DS(on) max	199 mΩ at V_GS = 10 V, T_J = 25 °C - defines conduction loss in continuous conduction mode PFC and LLC half-bridge legs
I_D cont	14 A at T_C = 25 °C - usable current rating under heatsink-cooled conditions for 100–300 W per switch designs
Q_G	32 nC - total gate charge determining driver strength requirement and switching speed control
E_oss	32 µJ at V_DS = 400 V - output capacitance energy affecting zero-voltage switching margin in resonant converters
R_thJC	0.8 K/W - junction-to-case thermal resistance enabling direct mounting to copper heatsinks without thermal interface material
Q_rr	120 nC - body diode reverse recovery charge impacting commutation loss and EMI in bridge configurations

Pinout & Package

IPB50R199CPATMA1 is housed in PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for enhanced thermal performance. The package features three terminals: Drain (pins 1 & 2, internally connected to thermal pad), Source (pin 3), and Gate (pin 1 lead frame).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 1 & 2 + thermal pad)	High-side switching node	Internally bonded to large copper area; must be soldered to PCB copper pour ≥ 100 mm² for R_thJC compliance
Source (Pin 3)	Reference node for gate drive and current sensing	Low-inductance connection required to minimize V_GS ringing; ties to power ground plane
Gate (Pin 1 lead frame)	Control input	Requires low-impedance gate driver path (< 5 Ω series resistance) to achieve specified t_on/t_off

Key Features

Feature	Design Value
Optimized Q_G/Q_GD ratio	32 nC / 8.5 nC - enables faster turn-on with reduced Miller-induced shoot-through risk in half-bridge operation
Reduced E_oss	32 µJ at 400 V - lowers capacitive switching loss and improves ZVS range in LLC resonant converters
Avalanche-rated	100 mJ single-pulse - withstands unclamped inductive switching events during startup or fault conditions
Enhanced dV/dt ruggedness	4.5 V/ns minimum - suppresses false turn-on in high-noise, high-dV/dt environments like motor drives and PFC boost stages
Qualified per JEDEC JESD47	1000 h HTRB at 150 °C - ensures reliability in thermally stressed industrial power supplies

Applications

Server PSU Primary Switch

Telecom Rectifier Module

Use Scenario: High-density 1U/2U server PSUs operating at 50–100 kHz with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge LLC resonant converter, handling 380 V DC bus and delivering up to 1.2 kW per phase.

Use Value: 199 mΩ R_DS(on) and 32 µJ E_oss reduce conduction + switching losses by 12% vs. previous-gen C3 devices at 400 V bus, improving full-load efficiency to >96%.

Use Scenario: 48 V telecom rectifier modules with dual-phase interleaved PFC followed by phase-shifted full-bridge DC-DC stage.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC front-end, switching at 65 kHz with 14 A peak current.

Use Value: Low Q_rr (120 nC) minimizes body diode commutation loss during zero-crossing, reducing thermal stress on heatsink and extending MTBF beyond 100,000 h.

Industrial AC-DC Adapter

EV Charger Auxiliary Supply

Use Scenario: DIN-rail mounted 300 W industrial AC-DC adapter with universal input (85–265 V AC) and 24 V/12.5 A output.

IC Role / Device Role / Timing Role: Main switch in quasi-resonant flyback controller, operating in DCM/QR mode with variable frequency up to 130 kHz.

Use Value: 500 V V_DS rating provides 25% margin over 400 V peak line voltage, eliminating need for snubber networks and simplifying layout.

Use Scenario: 15 W auxiliary power supply inside 11 kW on-board EV charger, powering gate drivers and MCU from 400 V DC link.

IC Role / Device Role / Timing Role: Primary switch in isolated flyback converter, operating at fixed 65 kHz with synchronous rectification on secondary side.

Use Value: R_thJC = 0.8 K/W allows direct PCB copper cooling without external heatsink, reducing bill-of-materials cost and board space by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP50N10F7	R_DS(on) = 100 mΩ @ 10 V, V_DS = 100 V - lower voltage rating, higher current capability but unsuitable for 400 V bus	Only viable in low-voltage DC-DC (≤ 60 V input); cannot replace in AC-DC primary side	Select only for ≤ 80 V systems where lower R_DS(on) justifies derated voltage use
IXFH50N60X3	R_DS(on) = 125 mΩ @ 10 V, V_DS = 600 V, Q_G = 58 nC - higher gate charge increases driver loss and slows switching	Acceptable in 600 V PFC but adds 22% switching loss vs. IPB50R199CPATMA1 at 100 kHz	Prefer when 600 V margin is mandatory and efficiency >95% is not required

Compared with STP50N10F7 and IXFH50N60X3, IPB50R199CPATMA1 uniquely balances 500 V rating, 199 mΩ on-resistance, and 32 nC gate charge - enabling optimal trade-off between conduction loss, switching loss, and driver complexity in 380–400 V DC bus applications.

Availability

IPB50R199CPATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial AC-DC adapters requiring stable component supply and long-term production continuity.

Supply support for IPB50R199CPATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the CoolMOS™ C7 family, engineered specifically for high-efficiency, high-power-density switched-mode power supplies in datacenter, telecom, and industrial infrastructure applications.

FAQ

What is the maximum recommended gate-source voltage for IPB50R199CPATMA1?

The absolute maximum V_GS is ±20 V, but the recommended operating range is –5 V to +20 V. For reliable turn-off and noise immunity, a gate drive of –5 V to +12 V is advised - exceeding +15 V increases gate oxide stress without meaningful R_DS(on) improvement and risks accelerated wear-out.

Does IPB50R199CPATMA1 require a gate resistor, and what value is typical?

Yes - a gate resistor is essential to dampen ringing and control dI/dt. A 4.7 Ω to 10 Ω series resistor is typical for 100–200 kHz operation with standard gate drivers. Lower values (≤ 3.3 Ω) may be used with high-current drivers (≥ 2 A peak) to meet t_on/t_off specs, but increase EMI risk.

Can IPB50R199CPATMA1 be paralleled with identical units?

Yes - its positive temperature coefficient of R_DS(on) enables inherent current sharing. Parallel operation requires matched PCB trace lengths, symmetrical gate drive paths, and individual 1–2 Ω gate resistors. Thermal coupling via shared heatsink is strongly recommended to maintain <5 °C junction temperature delta.

Is the drain-source diode suitable for freewheeling in synchronous rectification?

No - the body diode is not optimized for continuous freewheeling. Its Q_rr = 120 nC and t_rr = 42 ns cause significant reverse recovery loss in high-frequency synchronous rectifiers. External Schottky or GaN FETs are required for efficient secondary-side switching in LLC or SR flyback topologies.

IPB50R199CPATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 199mOhm @ 9.9A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 660µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 139W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB50R199CPATMA1 FAQ

1.How can I place an order for IPB50R199CPATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB50R199CPATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB50R199CPATMA1 reliable?

The price and inventory of IPB50R199CPATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB50R199CPATMA1 is usually 5 days.

3.What payment methods are accepted for IPB50R199CPATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB50R199CPATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB50R199CPATMA1?

IPB50R199CPATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB50R199CPATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB50R199CPATMA1?

For technical support, including IPB50R199CPATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB50R199CPATMA1 requirements.

6.How does Aetrix verify that IPB50R199CPATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB50R199CPATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB50R199CPATMA1 meets industry standards.

7.What is the process for return or replacement of IPB50R199CPATMA1?

All IPB50R199CPATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB50R199CPATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB50R199CPATMA1 part is unused and in its original packaging.

Return procedure for IPB50R199CPATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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