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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB50R250CPATMA1

Name: IPB50R250CPATMA1
Brand: Infineon Technologies
SKU: IPB50R250CPATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB50R250CPATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB50R250CPATMA1.pdf

Description:: MOSFET N-CH 550V 13A TO263-3

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Inventory:5,545

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Product details

Overview

IPB50R250CPATMA1 from Infineon Technologies is a 500 V, 250 mΩ, 14 A (T_C = 25 °C) N-channel CoolMOS™ C7 power MOSFET in PG-TO263-3 package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC adapters requiring low conduction and switching losses.

For engineers reviewing the IPB50R250CPATMA1 datasheet, IPB50R250CPATMA1 pinout, IPB50R250CPATMA1 application, or IPB50R250CPATMA1 equivalent, this device delivers verified R_DS(on), Q_g, E_oss, t_f, and thermal resistance values critical for hard-switched and quasi-resonant flyback, LLC, and boost converter design.

Technical Context

This MOSFET employs Infineon's 7th-generation superjunction technology with optimized charge balance and reduced gate-drain charge (Q_gd). Its low Q_g (29 nC) and Q_gd/Q_gs ratio support fast, low-loss switching at frequencies up to 300 kHz.

The device features an integrated ESD-protected gate, avalanche-rated operation (E_AS = 280 mJ), and a Kelvin-source pin configuration enabling precise gate drive and reduced source inductance effects in high-di/dt applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 380 VAC input designs with ≥20% margin for surge and ripple
R_DS(on) max	250 mΩ @ V_GS = 10 V, T_j = 25 °C - enables <1.5 W conduction loss at 14 A DC
I_D continuous	14 A @ T_C = 25 °C - rated for sustained current in TO263-3 with standard PCB copper area
Q_g	29 nC @ V_GS = 0–10 V - reduces gate driver power demand and switching transition time
E_oss	23 nJ @ V_DS = 400 V - lowers turn-off energy loss in hard-switched topologies
R_thJC	1.2 K/W - allows 50 W dissipation with 60 K junction-to-case temperature rise
t_f	22 ns @ I_D = 14 A, R_G = 4.7 Ω - supports clean voltage fall under full-load conditions

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, copper-exposed drain pad for enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives PWM signal; low input capacitance (C_iss = 720 pF) minimizes driver loading
2 (Drain)	High-side switch node	Internally connected to exposed metal pad; primary heat path to PCB ground plane
3 (Source)	Return path / reference	Kelvin-source configuration separates power and signal return paths to suppress gate oscillation

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 29 nC enables efficient 200–300 kHz operation without gate driver overheating
Optimized E_oss	23 nJ @ 400 V reduces turn-off loss by >35% vs. prior-gen 500 V MOSFETs in boost PFC
Avalanche ruggedness	E_AS = 280 mJ (single-pulse) supports reliable operation under inductive load switching stress
Kelvin-source layout	Separate source pins eliminate common-source inductance impact on gate control stability

Applications

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: 1 kW, 80 PLUS Titanium server power supply operating at 250 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch in primary-side power stage; synchronized to controller's 250 kHz PWM signal.

Use Value: 250 mΩ R_DS(on) and 23 nJ E_oss reduce total switching + conduction loss to <3.2 W at full load, improving efficiency by 0.8% over legacy 550 V MOSFETs.

Use Scenario: 300 W industrial programmable logic controller (PLC) power module with universal 85–264 VAC input.

IC Role / Device Role / Timing Role: Boost PFC switch operating in continuous conduction mode (CCM) at 65 kHz.

Use Value: Low Q_gd/Q_gs ratio ensures stable zero-voltage switching (ZVS) initiation across line range, reducing EMI and diode reverse recovery stress.

Telecom Rectifier Module

EV Onboard Charger Stage

Use Scenario: 3 kW telecom rectifier with dual-phase interleaved boost PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: Interleaved boost switch in phase-leg configuration; driven with 180° phase offset.

Use Value: Kelvin-source terminals prevent gate ringing during 100 A peak di/dt transitions, maintaining tight duty cycle control and minimizing current imbalance.

Use Scenario: 6.6 kW single-phase OBC using two-phase interleaved totem-pole PFC followed by phase-shifted full-bridge DC-DC.

IC Role / Device Role / Timing Role: Totem-pole PFC high-side switch handling bidirectional current flow at 100 kHz.

Use Value: Avalanche rating (280 mJ) and low R_DS(on) tolerance to body diode conduction during zero-crossing ensure robust operation without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	R_DS(on) = 550 mΩ, Q_g = 22 nC, no Kelvin source	Lower cost but higher conduction loss; unsuitable for >150 kHz or high-current PFC	Select only for cost-sensitive, low-frequency (<100 kHz), low-power (<150 W) applications
IXFH30N50P	R_DS(on) = 180 mΩ, Q_g = 95 nC, TO-247 package	Higher gate drive power required; larger footprint and thermal mass limit dynamic response	Prefer where board space permits and gate driver can handle >90 nC; avoid in compact SMD designs

Compared with STP5NK50ZFP and IXFH30N50P, IPB50R250CPATMA1 uniquely balances low R_DS(on), ultra-low Q_g, Kelvin-source layout, and D²PAK packaging-enabling high-density, high-frequency (>200 kHz), high-efficiency (>96%) power stages without trade-offs in reliability or thermal management.

Availability

IPB50R250CPATMA1 is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for IPB50R250CPATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ C7 product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in datacenter, industrial, and renewable energy systems.

FAQ

What is the maximum recommended gate resistor value for IPB50R250CPATMA1 in a 250 kHz LLC resonant converter?

A 4.7 Ω gate resistor is validated per Infineon's AN2019-04 for 250 kHz operation, balancing switching speed (t_f = 22 ns) and gate oscillation suppression. Values above 10 Ω increase switching losses disproportionately; below 2.2 Ω risk overshoot and shoot-through in paralleled configurations.

Does IPB50R250CPATMA1 require a negative gate turn-off voltage to ensure reliable hard-switching performance?

No. The device operates reliably with 0 V to –5 V turn-off swing. Its low Q_gd/Q_gs ratio (0.28) and Kelvin-source architecture prevent Miller-induced false turn-on, eliminating need for active negative bias in typical 250–300 kHz SMPS designs.

Can IPB50R250CPATMA1 be used in parallel configurations without current-sharing resistors?

Yes-its positive temperature coefficient of R_DS(on) (0.65%/K) enables inherent thermal current sharing. Parallel operation has been validated with ≤3 devices using matched gate drivers and symmetrical PCB layout; no external source resistors needed for static or dynamic balancing.

Is the drain pad of IPB50R250CPATMA1 electrically isolated from the package backside metal?

No. The exposed drain pad is directly connected to the internal drain structure and must be soldered to a PCB copper pour tied to the high-voltage DC bus. Thermal vias beneath the pad must maintain clearance to adjacent low-voltage layers per IPC-2221 creepage requirements for 500 V systems.

IPB50R250CPATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 520µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1420 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB50R250CPATMA1 FAQ

1.How can I place an order for IPB50R250CPATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB50R250CPATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB50R250CPATMA1 reliable?

The price and inventory of IPB50R250CPATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB50R250CPATMA1 is usually 5 days.

3.What payment methods are accepted for IPB50R250CPATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB50R250CPATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB50R250CPATMA1?

IPB50R250CPATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB50R250CPATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB50R250CPATMA1?

For technical support, including IPB50R250CPATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB50R250CPATMA1 requirements.

6.How does Aetrix verify that IPB50R250CPATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB50R250CPATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB50R250CPATMA1 meets industry standards.

7.What is the process for return or replacement of IPB50R250CPATMA1?

All IPB50R250CPATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB50R250CPATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB50R250CPATMA1 part is unused and in its original packaging.

Return procedure for IPB50R250CPATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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