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Infineon Technologies IPB60R045P7ATMA1
- Part No.:
- IPB60R045P7ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB60R045P7ATMA1.pdf
- Description:
- MOSFET N-CH 600V 61A TO263-3-2
- Quantity:
- Payment:
- Shipping:
Inventory:9,766
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Product details
Overview
IPB60R045P7ATMA1 from Infineon Technologies is a 600 V, 45 mΩ superjunction N-channel power MOSFET in D²PAK (PG-TO263-3) package, optimized for high-efficiency PFC and LLC resonant converters. It delivers 61 A continuous drain current at TC = 25°C, 90 nC total gate charge, and 9.4 µJ output switching energy at 400 V - enabling compact, thermally efficient 1–3 kW server PSU and telecom rectifier designs.
For engineers reviewing the IPB60R045P7ATMA1 datasheet, IPB60R045P7ATMA1 pinout, IPB60R045P7ATMA1 application, or IPB60R045P7ATMA1 equivalent, key selection criteria include its 900 A/µs body diode commutation ruggedness, 0.62 °C/W junction-to-case thermal resistance, low ringing tendency in hard-switched topologies, and JEDEC industrial qualification status.
Technical Context
This CoolMOS™ P7 device implements an advanced superjunction cell structure with optimized charge balance, delivering simultaneous reduction in RDS(on) × A (below 1 Ω·mm²) and Eoss (9.4 µJ at 400 V). Its gate plateau voltage of 5.2 V and low Qgd/Qg ratio (28/90 nC) support stable, low-loss turn-off in high-frequency ZVS circuits.
The MOSFET features a robust body diode with 277 ns reverse recovery time and 3.6 µC Qrr under 100 A/µs di/dt stress, validated for hard commutation in boost PFC stages. Its 80 V/ns dv/dt ruggedness and >2 kV HBM ESD rating ensure reliable operation in noisy industrial environments without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V DC-link operation with 50% safety margin in universal-input SMPS |
| RDS(on),max | 45 mΩ at VGS = 10 V, Tj = 150°C - enables <1.5 W conduction loss at 61 A in TO-263 footprint |
| Qg,typ | 90 nC - allows efficient gate drive with standard 1–2 A peak drivers at 100–300 kHz |
| Eoss | 9.4 µJ at 400 V - reduces turn-on switching loss by ~35% vs. prior P6 generation in LLC phase-shift control |
| diF/dt | 900 A/µs - sustains fast body diode commutation in critical-conduction-mode PFC without oscillation |
| RthJC | 0.62 °C/W - permits 201 W power dissipation with ≤125°C junction rise over 25°C case temperature |
Pinout & Package
Package: PG-TO263-3 (D²PAK), surface-mount with exposed drain tab for thermal enhancement. Tab is electrically connected to Drain (Pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; requires 10 V min for full enhancement; 2 Ω internal gate resistance limits ringing |
| Pin 2 / Tab | Drain | Main high-side power path; tab must be soldered to PCB copper pour for thermal and electrical integrity |
| Pin 3 | Source | Reference node for gate drive; connects to low-side switch source or ground return path |
Key Features
| Feature | Design Value |
|---|---|
| Hard/soft switching compatibility | Validated for both CCM boost PFC and LLC resonant stages due to 900 A/µs diF/dt and low Eoss |
| Body diode ruggedness | No failure under hard commutation stress per JEDEC JESD24-11; eliminates need for external anti-parallel diodes |
| ESD robustness | >2 kV HBM rating ensures handling survivability and board-level reliability without additional protection |
| Thermal performance | 0.62 °C/W RthJC enables 201 W dissipation with minimal heatsink in 1U server PSUs |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
|
Use Scenario: 2 kW front-end PFC stage in 1U redundant AC/DC module operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost converter. Use Value: 45 mΩ RDS(on) and 9.4 µJ Eoss reduce total losses by 12% vs. P6 generation, enabling 96.2% efficiency at full load. |
Use Scenario: Isolated LLC resonant DC/DC stage in -48 V telecom rectifier with 380 V DC input. IC Role / Device Role / Timing Role: Primary-side synchronous switch in zero-voltage switching (ZVS) half-bridge topology. Use Value: 900 A/µs diF/dt and low Qgd enable clean ZVS transition across 20–100% load range without auxiliary circuits. |
| LCD TV Backlight Inverter | Industrial UPS Charger |
|
Use Scenario: High-frequency resonant inverter driving CCFL or LED backlight in 4K LCD TVs. IC Role / Device Role / Timing Role: Half-bridge upper switch operating at 50–150 kHz with fast dead-time control. Use Value: 80 V/ns dv/dt ruggedness prevents false triggering during high-slew-rate transitions in compact layouts. |
Use Scenario: Bi-directional AC/DC + DC/DC charger in 3-phase 10 kVA industrial UPS system. IC Role / Device Role / Timing Role: Active clamp switch in flyback-derived isolated charger stage. Use Value: JEDEC industrial qualification (−55°C to +150°C) ensures 15-year field reliability under cyclic thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | 600 V, 48 mΩ, 105 nC Qg, higher Eoss (14.2 µJ) | Requires stronger gate driver and larger heatsink in 300 kHz PFC | Preferable where ST ecosystem integration or lower cost drives BOM decisions |
| IXFH60N60X3 | 600 V, 52 mΩ, 110 nC Qg, no specified diF/dt rating | Lacks documented hard-commutation validation; unsuitable for critical PFC stages | Acceptable only in soft-switched LLC where body diode stress is minimal |
Compared with STW62N60M2 and IXFH60N60X3, IPB60R045P7ATMA1 offers superior conduction-switching trade-off, JEDEC industrial qualification, and verified 900 A/µs body diode ruggedness - making it the preferred choice for high-reliability, high-density PFC and resonant converter designs.
Availability
IPB60R045P7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IPB60R045P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon and wide-bandgap technologies.
The CoolMOS™ P7 series targets high-efficiency, high-power-density AC/DC conversion - specifically engineered to replace older superjunction generations in PFC, LLC, and resonant topologies demanding low Eoss, high diF/dt, and industrial-grade ruggedness.
FAQ
Is IPB60R045P7ATMA1 suitable for paralleling in high-current PFC designs?
Yes, but with specific layout requirements: gate ferrite beads (100–330 Ω @ 100 MHz) on each MOSFET's gate line are recommended to suppress oscillation, and individual gate resistors (≥5 Ω) must be used to ensure balanced dynamic current sharing. The device's matched RDS(on) temperature coefficient supports thermal stability during parallel operation.
What is the maximum recommended gate drive voltage for reliable operation?
The absolute maximum gate-source voltage is ±30 V for dynamic conditions and ±20 V for static bias. For optimal RDS(on) and safe margin, a 12–15 V gate drive (with 10 V minimum threshold) is recommended. Exceeding 18 V increases gate oxide stress without meaningful RDS(on) improvement and risks long-term reliability degradation.
Does IPB60R045P7ATMA1 require a negative gate turn-off voltage?
No. The device operates reliably with 0 V turn-off and does not require negative gate bias. Its low Qgd/Qg ratio (31%) and 5.2 V gate plateau voltage provide strong immunity to Miller-induced false turn-on, even in high-dv/dt bridge configurations without negative gate drive.
How does the body diode performance compare to discrete ultrafast diodes in PFC?
The integrated body diode achieves 277 ns trr and 3.6 µC Qrr at 100 A/µs di/dt - matching mid-tier discrete ultrafast diodes while eliminating parasitic inductance from separate packaging. Its 900 A/µs diF/dt rating exceeds most discrete diodes, enabling cleaner zero-current switching in critical-conduction-mode PFC without snubber networks.
IPB60R045P7ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ P7
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1.08mA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3891 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 201W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
IPB60R045P7ATMA1 FAQ
1.How can I place an order for IPB60R045P7ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB60R045P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB60R045P7ATMA1 reliable?
The price and inventory of IPB60R045P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R045P7ATMA1 is usually 5 days.
3.What payment methods are accepted for IPB60R045P7ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R045P7ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB60R045P7ATMA1?
IPB60R045P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB60R045P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB60R045P7ATMA1?
For technical support, including IPB60R045P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R045P7ATMA1 requirements.
6.How does Aetrix verify that IPB60R045P7ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPB60R045P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R045P7ATMA1 meets industry standards.
7.What is the process for return or replacement of IPB60R045P7ATMA1?
All IPB60R045P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R045P7ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB60R045P7ATMA1 part is unused and in its original packaging.
Return procedure for IPB60R045P7ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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