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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R090CFD7ATMA1

Name: IPB60R090CFD7ATMA1
Brand: Infineon Technologies
SKU: IPB60R090CFD7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R090CFD7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R090CFD7ATMA1.pdf

Description:: MOSFET N-CH 600V 25A TO263-3

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Inventory:1,154

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Product details

Overview

IPB60R090CFD7ATMA1 from Infineon Technologies is a 600 V, 90 mΩ ultra-low-R_DS(on) superjunction MOSFET in D²PAK (PG-TO263-3) package, featuring 51 nC gate charge, 1300 A/µs diF/dt ruggedness, and optimized fast-body-diode performance for soft-switching resonant topologies including phase-shift full-bridge and LLC converters in server, telecom, and EV charging power supplies.

For engineers reviewing the IPB60R090CFD7ATMA1 datasheet, IPB60R090CFD7ATMA1 pinout, IPB60R090CFD7ATMA1 application, or IPB60R090CFD7ATMA1 equivalent, this CoolMOS™ CFD7 device delivers best-in-class Q_rr (0.54–1.08 µC), low E_oss (5.9 µJ @ 400 V), and robust hard commutation capability-critical for high-efficiency, high-power-density ZVS designs.

Technical Context

This MOSFET implements Infineon's CoolMOS™ CFD7 superjunction architecture with optimized charge balancing for reduced Q_g and Q_rr, enabling faster switching transitions and lower turn-off losses in resonant converters. Its 1300 A/µs diF/dt rating and 70 V/ns reverse diode dv/dt ensure reliable operation under hard commutation stress.

The device integrates a fast intrinsic body diode with t_rr = 109–164 ns and V_SD = 1.0 V @ 11.4 A, eliminating need for external anti-parallel diodes in many LLC half-bridge configurations. R_DS(on) remains stable up to T_j = 150 °C (max 0.090 Ω), supporting continuous 16 A conduction at case temperature of 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for primary-side switching in 400 V DC bus applications (e.g., telecom rectifiers, EV charger PFC stages)
R_DS(on), max	90 mΩ @ T_j = 150 °C - Enables low conduction loss in high-current, high-temperature operation without derating penalties
Q_g, typ	51 nC - Reduces gate drive power and enables use of smaller, cost-effective gate drivers in high-frequency (>100 kHz) LLC designs
Q_rr, typ	0.54 µC @ 400 V - Minimizes reverse recovery loss and EMI generation during zero-voltage switching transitions
diF/dt, max	1300 A/µs - Supports robust synchronous rectification and high-speed freewheeling in phase-shifted full-bridge topologies
E_oss	5.9 µJ @ 400 V - Low output capacitance energy reduces turn-on switching loss and improves light-load efficiency
T_j, max	150 °C - Fully qualified per JEDEC for industrial applications, enabling compact thermal design without active cooling

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount with exposed drain tab for enhanced thermal dissipation. Tab serves as Drain terminal (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input; requires <10 V threshold (V_GS(th) = 3.5–4.5 V) and 5.5 V plateau for reliable enhancement-mode switching
Pin 2 (Tab)	Drain	Main high-voltage power terminal; electrically connected to exposed copper tab for direct PCB heatsinking and low-inductance layout
Pin 3	Source	Power return path and gate reference; forms common node with gate driver ground to minimize shoot-through risk

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 109–164 ns and Q_rr = 0.54–1.08 µC enable clean ZVS transitions without snubbers in LLC resonant tanks
Low R_DS(on) × Q_g FOM	90 mΩ × 51 nC = 4.59 Ω·nC - industry-leading figure-of-merit for trade-off between conduction and switching loss
High diF/dt ruggedness	1300 A/µs rating ensures reliable operation during rapid current reversal in hard-commutated synchronous rectifiers
Optimized E_oss	5.9 µJ @ 400 V reduces capacitive turn-on loss and supports >300 kHz operation in high-density power modules

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for AI accelerator rack power.

IC Role / Device Role / Timing Role: High-side switching element operating at 250–350 kHz with ZVS, handling 16 A RMS drain current.

Use Value: 90 mΩ R_DS(on) and 5.9 µJ E_oss reduce total power loss by 1.8 W vs. CFD2 generation, enabling 96.5% peak efficiency.

Use Scenario: Main switch in 48 V/50 A telecom rectifier with phase-shift full-bridge topology.

IC Role / Device Role / Timing Role: Low-loss, high-reliability switching transistor in ZVS mode with 400 V DC bus and 100 kHz switching frequency.

Use Value: 1300 A/µs diF/dt rating prevents failure during load transients and hot-swap events, extending field lifetime beyond 10 years.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Primary switch in bidirectional CLLC converter for 11 kW AC/DC + DC/AC OBC.

IC Role / Device Role / Timing Role: Resonant switch supporting soft commutation in both directions, rated for 600 V blocking and 150 °C junction operation.

Use Value: Ultra-low Q_rr minimizes reverse recovery loss during polarity reversal, improving bidirectional efficiency by 0.7% at 50% load.

Use Scenario: Half-bridge switch in 10 kVA online UPS inverter stage with 400 V DC link.

IC Role / Device Role / Timing Role: Fast-switching, high-ruggedness MOSFET handling repetitive avalanche stress during grid fault conditions.

Use Value: 114 mJ single-pulse EAS rating and 70 V/ns reverse diode dv/dt withstand allow safe operation without external clamping circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB60R120CFD7	R_DS(on) = 120 mΩ, Q_g = 42 nC - higher conduction loss but lower gate drive demand	Better suited for lower-current (<12 A), higher-frequency (>500 kHz) designs where gate loss dominates	Select when optimizing for gate driver size and thermal margin over peak efficiency at full load
IPP60R099C7	Same R_DS(on) (99 mΩ), but CFD2-generation; Q_rr = 2.1 µC - 2× higher than CFD7	Acceptable in non-resonant hard-switched PFC, but causes excessive loss and EMI in LLC/ZVS	Avoid in soft-switching topologies; only consider for legacy redesigns with unchanged gate drive and layout

Compared with IPB60R120CFD7 and IPP60R099C7, the IPB60R090CFD7ATMA1 delivers the lowest combined conduction–switching loss in resonant converters above 100 kHz, validated by its 0.54 µC Q_rr and 5.9 µJ E_oss, making it optimal for next-gen high-power-density server and EV charging systems.

Availability

IPB60R090CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and long-term production continuity.

Supply support for IPB60R090CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with global manufacturing and qualification infrastructure aligned to IATF 16949 and ISO 9001 standards.

This device belongs to the CoolMOS™ CFD7 product line-engineered specifically for high-efficiency, high-reliability soft-switching power conversion in datacenter, telecom, and electric vehicle infrastructure.

FAQ

What is the maximum continuous drain current for IPB60R090CFD7ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 16 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is limited by junction temperature (T_j,max = 150 °C) and thermal resistance R_thJC = 1.01 °C/W. Derating curves confirm stable operation up to this limit without forced cooling.

Does IPB60R090CFD7ATMA1 require a gate resistor for stability in LLC applications?

Yes-a gate resistor (typically 5–10 Ω) is recommended to dampen ringing and control dV/dt during turn-on/turn-off. The datasheet specifies test conditions using R_G = 5.3 Ω, and application notes advise ferrite beads on gate lines when paralleling devices to prevent oscillation and uneven current sharing.

Can IPB60R090CFD7ATMA1 replace older CoolMOS™ CFD2 devices without layout changes?

Yes-pin-to-pin compatible with previous CFD2 D²PAK variants (e.g., IPB60R099C7), sharing identical PG-TO263-3 footprint, thermal pad geometry, and terminal assignments. However, gate drive timing and snubber values may require minor optimization due to lower Q_g and Q_rr.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the SOA is bounded by 16 A DC current and 600 V V_DS, with pulse limits scaling inversely with duration (e.g., 97 A for ≤10 µs pulses). Diagrams 2 and 3 in the datasheet confirm no second breakdown limitation up to 10 ms at this temperature, supporting robust short-circuit tolerance.

IPB60R090CFD7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 11.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 570µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2103 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 124W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R090CFD7ATMA1 FAQ

1.How can I place an order for IPB60R090CFD7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R090CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R090CFD7ATMA1 reliable?

The price and inventory of IPB60R090CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R090CFD7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R090CFD7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R090CFD7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R090CFD7ATMA1?

IPB60R090CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R090CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R090CFD7ATMA1?

For technical support, including IPB60R090CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R090CFD7ATMA1 requirements.

6.How does Aetrix verify that IPB60R090CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R090CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R090CFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R090CFD7ATMA1?

All IPB60R090CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R090CFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R090CFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R090CFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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