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Infineon Technologies IPB60R120C7ATMA1
- Part No.:
- IPB60R120C7ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IPB60R120C7ATMA1.pdf
- Description:
- MOSFET N-CH 600V 19A TO263-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,535
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Product details
Overview
IPB60R120C7ATMA1 from Infineon Technologies is a 600 V, 120 mΩ superjunction N-channel MOSFET in D²PAK (PG-TO263) package, optimized for hard- and soft-switching PFC and LLC resonant converters. It delivers 31 A continuous drain current at Tj < 150°C, 34 nC total gate charge, and 4 µJ output switching energy at 400 V - enabling high-efficiency, high-power-density server and telecom SMPS designs.
For engineers reviewing the IPB60R120C7ATMA1 datasheet, IPB60R120C7ATMA1 pinout, IPB60R120C7ATMA1 application, or IPB60R120C7ATMA1 equivalent, key selection criteria include RDS(on) × Eoss figure-of-merit, dv/dt ruggedness (120 V/ns), body diode commutation speed (360 A/µs), and industrial-grade JEDEC qualification for mission-critical power stages.
Technical Context
CoolMOS™ C7 employs trench-gate superjunction architecture to achieve sub-1 Ω·mm² RDS(on)×A, with optimized charge distribution reducing Qg and Eoss simultaneously. Its 120 V/ns dv/dt rating supports robust operation in fast-switching topologies without spurious turn-on.
The device integrates a fast-recovery body diode (trr = 310 ns, Qrr = 3.5 µC) and exhibits low effective output capacitance (Co(er) = 50 pF), enabling efficient zero-voltage switching in LLC and high-frequency PFC stages up to 300 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - rated blocking voltage for primary-side switching in 400 V DC-link telecom/server PSUs |
| RDS(on),max | 120 mΩ at VGS = 10 V, Tj = 150°C - enables low conduction loss in 31 A continuous PFC boost stages |
| Qg,typ | 34 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers |
| Eoss@400V | 4 µJ - minimizes turn-off loss and supports higher switching frequencies without efficiency penalty |
| dv/dt ruggedness | 120 V/ns - prevents false triggering during fast voltage transients in high-dV/dt LLC half-bridges |
| Body diode di/dt | 360 A/µs - sustains rapid reverse recovery in synchronous rectification and resonant tank commutation |
| Ptot | 92 W at TC = 25°C - supports high-power density with minimal heatsink area in compact 1U server PSUs |
Pinout & Package
IPB60R120C7ATMA1 uses the PG-TO263 (D²PAK) surface-mount package with exposed drain tab for thermal enhancement. The drain connects directly to the copper tab on the underside, enabling low-thermal-resistance mounting to heatsinks or PCB copper planes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Receives PWM signal; requires <5.0 V plateau voltage for reliable turn-on under 400 V bus conditions |
| Pin 2 (Drain) + Tab | High-voltage power terminal | Primary-side switch node; tab provides direct thermal path to heatsink and electrical connection to DC-link capacitor |
| Pin 3 (Source) | Reference and return path | Serves as local ground reference for gate driver; carries full load current and must be routed with low-inductance layout |
Key Features
| Feature | Design Value |
|---|---|
| Hard- and soft-switching compatibility | Validated for both PFC boost and LLC resonant topologies due to balanced Qg/Eoss and 120 V/ns dv/dt rating |
| Industrial-grade qualification | Qualified per JEDEC J-STD-020 (MSL1) and JESD22-A108 for 150°C continuous operation in harsh environments |
| Low RDS(on) × Eoss FOM | Best-in-class figure-of-merit enables >98% efficiency in 3 kW server PFC stages at 100 kHz |
| Enhanced body diode performance | 360 A/µs di/dt capability and 310 ns trr reduce ringing and EMI in high-frequency ZVS transitions |
| Thermal resistance (RthJC) | 1.357 °C/W - allows 92 W dissipation with ≤125°C junction rise over case, simplifying thermal design |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier LLC Resonant Converter |
|---|---|
|
Use Scenario: Boost PFC stage in 3 kW 1U rack-mounted server PSU operating at 100 kHz switching frequency. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 31 A continuous current and 400 V DC-link voltage. Use Value: 120 mΩ RDS(on) and 4 µJ Eoss jointly reduce conduction and switching losses, enabling >98.2% efficiency at full load. |
Use Scenario: High-frequency LLC half-bridge in 2 kW telecom rectifier with 300 kHz resonant frequency and ZVS operation. IC Role / Device Role / Timing Role: Upper-leg switching device subjected to high dv/dt stress and body-diode commutation. Use Value: 120 V/ns dv/dt ruggedness prevents false turn-on; 360 A/µs di/dt rating ensures clean zero-current switching transitions. |
| Solar Inverter DC-DC Stage | UPS High-Efficiency PWM Inverter |
|
Use Scenario: Isolated DC-DC stage in string solar inverter converting 1000 V PV input to 400 V bus with galvanic isolation. IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge topology requiring low Qg and robust avalanche capability. Use Value: 34 nC Qg reduces gate drive loss; 78 mJ single-pulse avalanche energy protects against transient overvoltage events. |
Use Scenario: Output H-bridge in online double-conversion UPS delivering clean 230 V AC with <1% THD. IC Role / Device Role / Timing Role: Fast-switching PWM inverter switch managing bidirectional energy flow and regenerative braking. Use Value: Low Ciss (1500 pF) and Coss (27 pF) minimize capacitive switching loss; 66 A pulsed current rating handles surge loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60N120FIAG | RDS(on) = 120 mΩ, but Qg = 42 nC and Eoss = 6.2 µJ - higher switching loss at >150 kHz | Limited to <200 kHz PFC; less suitable for LLC above 250 kHz due to slower turn-off | Prefer when cost sensitivity outweighs efficiency targets in 1–2 kW telecom PSUs |
| IXFH60N60X3 | RDS(on) = 110 mΩ, but dv/dt rating = 85 V/ns and no industrial JEDEC qualification | Not recommended for mission-critical server or telecom where long-term reliability is mandated | Select only for non-industrial, cost-driven industrial motor drives with relaxed dv/dt requirements |
Compared with STP60N120FIAG and IXFH60N60X3, IPB60R120C7ATMA1 offers superior dv/dt immunity and lower Eoss, making it uniquely suited for high-frequency, high-reliability PFC and LLC in datacenter and telecom infrastructure where thermal margin and system efficiency are critical.
Availability
IPB60R120C7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverter DC-DC stages requiring stable component supply, long lifecycle support, and industrial-grade reliability.
Supply support for IPB60R120C7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.
The CoolMOS™ C7 series was developed specifically for high-efficiency, high-power-density switched-mode power supplies in computing, telecom, and renewable energy systems - targeting best-in-class RDS(on) × Eoss trade-offs.
FAQ
What is the maximum continuous drain current for IPB60R120C7ATMA1 at 100°C case temperature?
The maximum continuous drain current is 12 A at TC = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limits under real-world heatsink conditions and ensures safe operation within the 150°C maximum junction temperature.
Is IPB60R120C7ATMA1 suitable for paralleling in high-current PFC designs?
Yes - the datasheet explicitly recommends gate ferrite beads or separate totem-pole drivers for paralleling. Its matched threshold voltage (3.0–4.0 V) and low RDS(on) tolerance support balanced current sharing across multiple devices in multi-kW boost PFC stages.
Does IPB60R120C7ATMA1 have avalanche energy rating, and what is its value?
Yes - it has a single-pulse avalanche energy rating of 78 mJ (EAS) at ID = 4.4 A and VDD = 50 V, per Table 2. This rating enables robustness against inductive switching transients in unclamped inductive load circuits.
What is the gate plateau voltage, and why does it matter for gate driver selection?
The gate plateau voltage is 5.0 V (typical), defined as the voltage level where the Miller region stabilizes during turn-on. This value determines the minimum gate drive voltage needed to fully enhance the channel and avoid linear-mode operation - critical for selecting 12 V or higher gate drivers in high-side configurations.
IPB60R120C7ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ C7
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 120mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 390µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 92W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
IPB60R120C7ATMA1 FAQ
1.How can I place an order for IPB60R120C7ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPB60R120C7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPB60R120C7ATMA1 reliable?
The price and inventory of IPB60R120C7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R120C7ATMA1 is usually 5 days.
3.What payment methods are accepted for IPB60R120C7ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R120C7ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPB60R120C7ATMA1?
IPB60R120C7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPB60R120C7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPB60R120C7ATMA1?
For technical support, including IPB60R120C7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R120C7ATMA1 requirements.
6.How does Aetrix verify that IPB60R120C7ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPB60R120C7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R120C7ATMA1 meets industry standards.
7.What is the process for return or replacement of IPB60R120C7ATMA1?
All IPB60R120C7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R120C7ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPB60R120C7ATMA1 part is unused and in its original packaging.
Return procedure for IPB60R120C7ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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