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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB60R170CFD7ATMA1

Name: IPB60R170CFD7ATMA1
Brand: Infineon Technologies
SKU: IPB60R170CFD7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB60R170CFD7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB60R170CFD7ATMA1.pdf

Description:: MOSFET N-CH 600V 14A TO263-3-2

Quantity:: RFQ Add To RFQ list

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Inventory:1,000

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Product details

Overview

IPB60R170CFD7ATMA1 from Infineon Technologies is a 600 V, 170 mΩ ultra-fast body diode superjunction MOSFET in D²PAK (PG-TO263-3) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 28 nC gate charge, 0.34 µC typical reverse recovery charge (Qrr), 1300 A/µs diF/dt ruggedness, and operates up to 150 °C junction temperature - enabling high-efficiency, high-power-density server, telecom, and EV charging power supplies.

For engineers reviewing the IPB60R170CFD7ATMA1 datasheet, IPB60R170CFD7ATMA1 pinout, IPB60R170CFD7ATMA1 application, or IPB60R170CFD7ATMA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in SMD/THD), hard commutation robustness, body diode dv/dt rating (70 V/ns), Eoss (3.2 µJ @ 400 V), and JEDEC industrial qualification status.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with optimized charge balancing for reduced Qg and Qrr while maintaining high dv/dt immunity. Its gate plateau voltage is 5.7 V, and it features a low 10.9 Ω intrinsic gate resistance - enabling precise switching control in ZVS and LLC circuits where turn-off timing and body diode recovery are critical.

The MOSFET integrates a fast-recovery body diode with trr of 89–134 ns and Irrm of 6.8 A under 100 A/µs diF/dt stress. Thermal resistance RthJC is 1.67 °C/W, supporting high-power operation when mounted on PCBs with ≥6 cm² copper area for drain cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V bus designs with 50 % margin for transient overvoltage in telecom/server PSUs
R_DS(on), max	170 mΩ @ T_j = 150 °C - enables compact thermal design in 1–3 kW resonant converters
Q_g, typ	28 nC - reduces gate drive loss and allows use of lower-power drivers in high-frequency LLC stages
Q_rr, typ	0.34 µC - minimizes switching loss and EMI during hard commutation in asymmetric half-bridge configurations
E_oss	3.2 µJ @ 400 V - lowers capacitive turn-on loss in zero-voltage switching transitions
diF/dt	1300 A/µs - ensures reliable body diode commutation without oscillation in high-dI/dt LLC primary-side rectification
T_j, max	150 °C - qualified per JEDEC for industrial applications, supporting unforced convection cooling in dense layouts

Pinout & Package

IPB60R170CFD7ATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for thermal and electrical connection. The package has three terminals: Drain (tab and Pin 2), Gate (Pin 1), Source (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Accepts 10 V logic-level drive; 5.7 V plateau voltage ensures stable Miller region transition
Pin 2 (Drain)	Main power output / high-side switch node	Exposed metal tab - must be soldered to ≥6 cm² copper pour for thermal management and low-inductance return path
Pin 3 (Source)	Reference node / current sense point	Provides Kelvin source connection for accurate gate drive referencing and current monitoring

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 89–134 ns and Qrr = 0.34 µC enable clean zero-current switching in LLC synchronous rectification
Low R_DS(on) × Q_g FOM	Best-in-class figure-of-merit among 600 V SMD MOSFETs - directly improves efficiency at 100–500 kHz
High diF/dt ruggedness	1300 A/µs rating prevents parasitic turn-on during rapid current reversal in phase-shifted bridges
JEDEC industrial qualification	Validated for continuous operation at T_j = 150 °C - supports long-lifetime deployment in telecom rectifiers and EV chargers

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 1U 3 kW front-end AC-DC converter using phase-shift full-bridge topology with ZVS.

IC Role / Device Role / Timing Role: High-side primary switch handling 400 V DC bus and 10–20 A RMS current at 100–200 kHz.

Use Value: Low Qrr and high diF/dt ensure reliable soft switching across line/load transients without snubber losses.

Use Scenario: -48 V distributed power system rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Primary-side switching element in isolated LLC resonant converter delivering >96 % peak efficiency.

Use Value: 170 mΩ R_DS(on) and 3.2 µJ E_oss reduce conduction + capacitive losses, enabling >100 W/in³ power density.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Bidirectional OBC PFC + DC-DC stage operating from 200–450 V battery range.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in CLLC resonant DC-DC with 300 kHz switching.

Use Value: Ultra-fast body diode eliminates need for external Schottky catch diodes, reducing BOM count and layout area.

Use Scenario: Three-phase 10 kVA UPS inverter stage requiring high reliability under overload and short-circuit conditions.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter leg with forced air cooling.

Use Value: 1300 A/µs diF/dt and 70 V/ns reverse dv/dt withstand prevent false triggering during fast load dumps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R170CFD7	TO-247-3 through-hole package; identical die, higher R_thJC (0.5 K/W vs. 1.67 K/W)	Better suited for forced-air cooled industrial inverters where mechanical robustness outweighs size constraints	Select for higher thermal margin in low-volume, high-reliability systems where D²PAK mounting complexity is undesirable
STP60N170K6	170 mΩ, 650 V, but higher Q_rr (1.1 µC) and no CFD7-grade diF/dt rating	Limited to hard-switched PFC or non-resonant SMPS due to slower body diode recovery	Consider only if cost sensitivity dominates and soft-switching performance is not required

Compared with IPW60R170CFD7 and STP60N170K6, IPB60R170CFD7ATMA1 uniquely balances SMD manufacturability, lowest Qrr, and highest diF/dt - making it the optimal choice for space-constrained, high-frequency resonant converters demanding both efficiency and ruggedness.

Availability

IPB60R170CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPB60R170CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ CFD7 product line was engineered specifically for soft-switching power conversion - targeting phase-shift full-bridge, LLC, and CLLC topologies in datacenter, telecom, and electric vehicle infrastructure where efficiency, power density, and reliability are co-optimized.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

The datasheet specifies RG = 10.2 Ω for dynamic characterization. For ZVS in phase-shift full-bridge, a gate resistor between 5 Ω and 15 Ω is recommended to balance turn-on speed against ringing suppression. Lower values (<5 Ω) risk overshoot and gate driver stress; higher values (>20 Ω) delay turn-on and compromise ZVS margin at light loads.

Can IPB60R170CFD7ATMA1 be paralleled in high-current LLC designs?

Yes, but with strict layout and drive requirements: use individual ferrite beads (≥100 Ω @ 100 MHz) on each gate line, matched gate trace lengths, and separate totem-pole drivers per device. Parallel operation requires tight RDS(on) matching (±5 %) and symmetrical thermal coupling to avoid current imbalance above 20 A per device.

Does this MOSFET require a negative gate turn-off voltage?

No. The device is rated for ±30 V dynamic gate-source voltage and operates reliably with 0 V to +12 V gate drive. Negative turn-off (e.g., –5 V) is not required for stability, though it may marginally improve noise immunity in high-dv/dt environments - provided the gate driver supports it and does not exceed VGS = –20 V static limit.

How does its body diode performance compare to standard silicon MOSFETs in hard commutation?

Unlike standard MOSFETs, the CFD7 body diode achieves 1300 A/µs diF/dt and 70 V/ns reverse dv/dt - exceeding typical 600 V Si devices by 3× in commutation ruggedness. This eliminates need for external diode clamping in most LLC and PSFB designs, while maintaining low Qrr (0.34 µC) that reduces switching loss by ~40 % versus legacy CoolMOS™ CFD2.

IPB60R170CFD7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1190 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB60R170CFD7ATMA1 FAQ

1.How can I place an order for IPB60R170CFD7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB60R170CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB60R170CFD7ATMA1 reliable?

The price and inventory of IPB60R170CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB60R170CFD7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB60R170CFD7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB60R170CFD7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB60R170CFD7ATMA1?

IPB60R170CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB60R170CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB60R170CFD7ATMA1?

For technical support, including IPB60R170CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB60R170CFD7ATMA1 requirements.

6.How does Aetrix verify that IPB60R170CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB60R170CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB60R170CFD7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB60R170CFD7ATMA1?

All IPB60R170CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB60R170CFD7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB60R170CFD7ATMA1 part is unused and in its original packaging.

Return procedure for IPB60R170CFD7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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