Infineon Technologies IPB60R180C7ATMA1

Overview

IPB60R180C7ATMA1 from Infineon Technologies is a 600 V, 22 A (T_j < 150°C) N-channel superjunction MOSFET in D²PAK (TO-263) package, featuring 180 mΩ max R_DS(on), 24 nC typical gate charge, and 120 V/ns dv/dt ruggedness. It serves as a high-efficiency primary-side switch in hard- and soft-switching SMPS topologies including PFC and LLC resonant converters for server, telecom, and solar inverters.

For engineers reviewing the IPB60R180C7ATMA1 datasheet, IPB60R180C7ATMA1 pinout, IPB60R180C7ATMA1 application, or IPB60R180C7ATMA1 equivalent, key selection criteria include R_DS(on)×E_oss figure-of-merit, body diode commutation speed (350 A/µs), thermal resistance (1.832 °C/W j–c), industrial-grade JEDEC qualification, and gate drive compatibility with standard 10–13 V logic-level controllers.

Technical Context

This CoolMOS™ C7 device implements a superjunction cell architecture optimized for high-voltage switching efficiency, delivering best-in-class R_DS(on)×E_oss and R_DS(on)×Q_g trade-offs. Its 120 V/ns dv/dt rating enables robust operation in fast-switching LLC and asymmetric half-bridge PFC stages without spurious turn-on.

The MOSFET integrates a fast-recovery body diode (t_rr = 280 ns, Q_rr = 2.6 µC) with 350 A/µs di/dt capability, supporting zero-voltage switching (ZVS) transitions and reducing snubber losses in resonant topologies. Gate plateau voltage is fixed at 5.0 V, ensuring predictable Miller-effect timing under 400 V bus conditions.

Key Specifications

Pinout & Package

IPB60R180C7ATMA1 uses the D²PAK (PG-TO263-3) surface-mount package with exposed drain tab for thermal and electrical connection. The drain tab is electrically connected to Pin 2 and thermally coupled to the PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPW60R099C7 and STP60N6F6, IPB60R180C7ATMA1 delivers optimal balance of switching efficiency (via lowest R_DS(on)×E_oss), thermal performance (1.832 °C/W), and industrial reliability-making it preferred for high-density, high-uptime server and telecom power supplies where both loss and lifetime matter.

Availability

IPB60R180C7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar DC-DC converters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPB60R180C7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ C7 product line was engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in datacenter, telecom, and renewable energy systems-emphasizing low R_DS(on)×E_oss, robust dv/dt immunity, and industrial-grade reliability.

FAQ

What is the maximum continuous drain current for IPB60R180C7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 8 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating reflects thermal limitation-not silicon current capacity-and assumes proper PCB copper area (≥6 cm²) and heatsinking per the thermal characterization in Table 3. Derating curves in Diagram 1 confirm linear reduction from 22 A at 25°C to 8 A at 100°C.

Does IPB60R180C7ATMA1 require a gate resistor for stability in LLC resonant converters?

Yes-a gate resistor (typically 5–15 Ω) is recommended to dampen gate oscillation caused by PCB inductance and the MOSFET's 0.85 Ω internal gate resistance. Application note AN2017-05 confirms that 10 Ω external resistance optimizes turn-on/turn-off timing while suppressing ringing during ZVS transitions at 300–500 kHz, especially when paralleling multiple devices.

Can IPB60R180C7ATMA1 replace older CoolMOS™ C3 or C6 devices in existing PFC designs?

Yes-pin-compatible with previous C3/C6 D²PAK variants and electrically backward compatible. However, its lower Q_g and E_oss may require gate driver timing adjustments: turn-on delay decreases by ~15%, and Miller plateau duration shortens. Layout review is advised to verify gate loop inductance does not cause overshoot due to faster edge rates.

What is the recommended PCB layout practice for the drain tab of IPB60R180C7ATMA1?

The exposed drain tab must be soldered to a minimum 6 cm² copper area on an inner or outer PCB layer, using ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to internal ground or power planes. Per Infineon's layout guide AN2015-09, this achieves the 1.832 °C/W R_thJC and prevents localized hot spots exceeding 150°C junction temperature under 68 W dissipation.