Infineon Technologies IPB60R190P6ATMA1

Overview

IPB60R190P6ATMA1 from Infineon Technologies is a 600 V, 190 mΩ superjunction N-channel MOSFET in D²PAK (TO-263) package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 20.2 A continuous drain current at 25°C, 37 nC total gate charge, and 4.9 µJ output energy at 400 V-enabling compact, cooler-running server PSUs and industrial adapters.

For engineers reviewing the IPB60R190P6ATMA1 datasheet, IPB60R190P6ATMA1 pinout, IPB60R190P6ATMA1 application, or IPB60R190P6ATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven turn-off loss, dv/dt ruggedness up to 100 V/ns, and thermal resistance of 0.83 °C/W (junction-to-case).

Technical Context

This CoolMOS™ P6 device implements an optimized superjunction cell structure with reduced specific on-resistance and minimized gate-drain charge (Q_gd = 13 nC), enabling fast, low-loss switching in continuous conduction mode (CCM) PFC and resonant LLC topologies. Its body diode supports 500 A/µs commutation speed and exhibits 310 ns reverse recovery time at 100 A/µs di/dt.

The MOSFET features a gate threshold voltage of 3.5–4.5 V, plateau voltage of 6.1 V, and robust 100 V/ns dv/dt immunity-ensuring reliable operation under high dV/dt stress in bridge-leg configurations without spurious turn-on. Thermal design is supported by a low R_thJC of 0.83 °C/W in TO-263 packaging.

Key Specifications

Pinout & Package

IPB60R190P6ATMA1 is housed in a surface-mount D²PAK (PG-TO263) package with exposed drain tab for thermal and electrical connection. The package complies with JEDEC MO-211 and supports reflow soldering per MSL1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPW60R190P6 and IPP60R190P6, IPB60R190P6ATMA1 offers identical electrical specs and thermal resistance but enables automated SMT assembly, reduced board area, and improved thermal coupling to large PCB copper planes-making it optimal for high-density, high-reliability server and telecom power modules.

Availability

IPB60R190P6ATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial adapters, LCD TV backlight inverters, and telecom rectifiers requiring stable component supply, long-lifecycle support, and JEDEC-qualified industrial-grade reliability.

Supply support for IPB60R190P6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ P6 product line was engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, industrial, and broadcast power systems-balancing ultra-low E_oss, rugged dv/dt immunity, and ease of gate drive.

FAQ

What is the maximum recommended gate resistor value for IPB60R190P6ATMA1 in a 100 kHz PFC stage?

A 10 Ω gate resistor is recommended for 100 kHz PFC operation to balance switching loss reduction and EMI control. With Q_g = 37 nC and typical gate drive voltage of 12–15 V, this yields ~370 ns effective rise/fall time-sufficient to avoid excessive dv/dt while limiting peak gate current to <1.5 A and minimizing shoot-through risk in critical conduction mode.

Does IPB60R190P6ATMA1 require a gate driver with negative turn-off capability?

No. The device's 100 V/ns dv/dt ruggedness and 6.1 V gate plateau voltage allow reliable operation with standard single-supply gate drivers (e.g., 12 V). Negative turn-off is not required, though a small negative bias (−2 V) may further improve noise immunity in high-noise telecom rectifier environments.

Can IPB60R190P6ATMA1 be paralleled with identical units without current-balancing components?

Parallel operation is feasible but requires individual gate resistors (≥5 Ω) and ferrite beads on each gate line to suppress oscillation. Due to positive R_DS(on) temperature coefficient, thermal runaway is unlikely-but layout symmetry and matched trace inductance are essential to ensure <10% current imbalance at full load.

What is the safe operating area (SOA) limitation at T_j = 125°C for repetitive pulse operation?

At T_j = 125°C, the SOA is limited by R_DS(on) derating and thermal impedance. For 10 ms pulses, maximum V_DS is 420 V at 12 A; for 100 µs pulses, it extends to 580 V at 25 A. These boundaries are defined by the device's 0.83 °C/W R_thJC and 150°C max junction temperature-exceeding them risks localized hot-spot formation and premature failure.